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GaN Power Device Market - Global Forecast 2025-2032

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    Report

  • 180 Pages
  • October 2025
  • Region: Global
  • 360iResearch™
  • ID: 4896859
UP TO OFF until Jan 01st 2026
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Senior leaders seeking to optimize their strategy within advanced power electronics should focus on the GaN Power Device Market. This sector is rapidly evolving to meet industry requirements for increased electrification, efficiency, and compact solutions, positioning itself at the heart of next-generation power system developments.

Market Snapshot: GaN Power Device Market Overview

The global GaN Power Device Market achieved USD 381.18 million in 2024, with projections indicating growth to USD 470.76 million in 2025 and reaching USD 2.27 billion by 2032 at a strong CAGR of 24.98%. Adoption is accelerating across automotive, renewable energy, and telecommunications, reflecting the value of GaN’s thermal management and miniaturization advantages. Demand for reliable, compact, and energy-efficient devices continues to influence new product development and supply chain strategies, consolidating the role of gallium nitride as a critical technology driver in power electronics.

Scope & Segmentation

This report provides comprehensive coverage of the GaN Power Device Market to facilitate decision-making for stakeholders focused on value chain performance and capital allocation.

  • Device Types: Coverage includes Schottky and Zener diodes, integrated circuits, silicon and GaN-based rectifiers, plus high electron mobility and multi-gate transistors, ensuring application relevance across power conversion, amplification, and high-speed switching.
  • Voltage Ratings: Segmentation reflects coverage of high voltage (above 1200V), moderate voltage (600V to 1200V), and low voltage (under 600V) device categories, addressing the spectrum from industrial automation to fast-charging consumer electronics and automotive electrification.
  • Material Types: Analysis incorporates Gallium Nitride-on-Sapphire and Gallium Nitride-on-Silicon substrates, aiding assessment of process economics, manufacturing trends, and the impact on device efficiency and integration.
  • End-Users: Assesses core sectors including aerospace and defense, automotive, consumer electronics, energy, industrial, and telecommunications, providing insight into how distinct requirements affect device design, market penetration, and application timelines.
  • Regional Analysis: Includes the Americas (such as United States, Canada, Brazil, Mexico), EMEA (covering the United Kingdom, Germany, France, Saudi Arabia, South Africa, and others), and Asia-Pacific (including China, India, Japan, Australia, and more), highlighting distinct innovation currents and shifting investment priorities.
  • Company Coverage: Delivers benchmarking of prominent industry participants, such as AIXTRON SE, Analog Devices Inc., Broadcom Inc., Efficient Power Conversion Corporation, Infineon Technologies AG, Navitas Semiconductor, NXP Semiconductors N.V., Texas Instruments Incorporated, and other leading suppliers.

Key Takeaways for Senior Decision-Makers

  • New GaN semiconductor architectures are enabling higher efficiency and superior heat performance, prompting strategic changes in critical system designs.
  • Recent advances in wafer manufacturing and packaging streamline integration costs and diversify sourcing channels, supporting agile supplier strategies and market entry for new firms.
  • Growing deployment in emerging sectors, notably 5G infrastructure and electric vehicles, aligns with investments focused on miniaturization and high-density modules using gallium nitride technology.
  • Collaborative ventures and supplier alliances are actively configuring market responses to geographic, technological, and compliance shifts, impacting competitive positioning and procurement strategies.
  • Adoption of geographically distributed sourcing is strengthening supply chain resilience, benefiting both OEMs and end-users in mitigating logistical risks.
  • Distinct approaches are emerging by sector, with energy and industrial verticals emphasizing renewables integration, while consumer electronics accelerates compact, fast-charge device adoption.

Tariff Impact: Shaping Global Supply Chains and Industry Competitiveness

Recent U.S. tariffs on imported semiconductors are driving industry players to realign supply chains, prioritizing domestic wafer fabrication and proactive inventory controls. This strategic adaptation amplifies the significance of North American partnerships and promotes expansion of local manufacturing—especially within highly sensitive verticals such as automotive and defense. Organizations are re-evaluating procurement and risk management strategies to maintain competitive edge amid regulatory adjustments.

Gallium Nitride Power Device Market Methodology & Data Sources

The research methodology integrates both primary and secondary analysis, drawing on technical documents, regulatory reports, and interviews with key manufacturers, integrators, and users. Thorough data validation and statistical checks strengthen the reliability of findings, supporting well-grounded market insights.

Why This Report Matters

  • Equips executives with detailed market segmentation and actionable insights to address evolving technology, supply chain, and regulatory demands in power electronics.
  • Offers clear recommendations to support innovation, streamline investment decisions, and align strategies with GaN advancements and market disruptions.
  • Enables informed allocation of capital by identifying regional and sectoral opportunity hot spots across the gallium nitride power device value chain.

Conclusion

The GaN power device sector is rapidly adapting through advanced materials, fabrication techniques, and evolving policy landscapes. Executives prepared to act on these dynamics can enhance their market positioning and support sustained organizational growth within the changing power electronics industry.

 

Additional Product Information:

  • Purchase of this report includes 1 year online access with quarterly updates.
  • This report can be updated on request. Please contact our Customer Experience team using the Ask a Question widget on our website.

Table of Contents

1. Preface
1.1. Objectives of the Study
1.2. Market Segmentation & Coverage
1.3. Years Considered for the Study
1.4. Currency & Pricing
1.5. Language
1.6. Stakeholders
2. Research Methodology
3. Executive Summary
4. Market Overview
5. Market Insights
5.1. Increasing adoption of GaN power amplifiers in 5G infrastructure for enhanced efficiency and power density
5.2. Rising integration of GaN devices in electric vehicle charging systems to reduce charging times and system size
5.3. Advancements in GaN-on-SiC substrates driving higher thermal performance and reliability in power modules
5.4. Growing investment in GaN-based fast chargers for consumer electronics to support rapid charging demands
5.5. Emergence of compact GaN power devices in aerospace applications for weight and energy savings at altitude
5.6. Development of GaN power transistors for data center power supplies to improve energy efficiency and reduce cooling needs
5.7. Strategic partnerships between semiconductor manufacturers and automotive OEMs for GaN adoption in EV powertrains
5.8. Progress in wafer-scale testing and defective yield improvement techniques for large-scale GaN production
5.9. Expansion of gallium nitride material supply chains to meet surging demand across multiple high-power applications
5.10. Regulatory advancements and testing standards for GaN power devices accelerating market entry and certification
6. Cumulative Impact of United States Tariffs 2025
7. Cumulative Impact of Artificial Intelligence 2025
8. GaN Power Device Market, by Device Type
8.1. Diodes
8.1.1. Schottky Diodes
8.1.2. Zener Diodes
8.2. Integrated Circuits
8.3. Rectifiers
8.3.1. Gallium Nitride Rectifiers
8.3.2. Silicon Rectifiers
8.4. Transistors
8.4.1. High Electron Mobility Transistors
8.4.2. Multi-Gate Transistors
9. GaN Power Device Market, by Voltage Ratings
9.1. High Voltage (>1200V)
9.2. Low Voltage (< 600V)
9.3. Moderate Voltage (600V - 1200V)
10. GaN Power Device Market, by Material Type
10.1. Gallium Nitride-on-Sapphire
10.2. Gallium Nitride-on-Silicon
11. GaN Power Device Market, by End-Users
11.1. Aerospace & Defense
11.2. Automotive
11.3. Consumer Electronics
11.4. Energy
11.5. Industrial
11.6. Telecommunications
12. GaN Power Device Market, by Region
12.1. Americas
12.1.1. North America
12.1.2. Latin America
12.2. Europe, Middle East & Africa
12.2.1. Europe
12.2.2. Middle East
12.2.3. Africa
12.3. Asia-Pacific
13. GaN Power Device Market, by Group
13.1. ASEAN
13.2. GCC
13.3. European Union
13.4. BRICS
13.5. G7
13.6. NATO
14. GaN Power Device Market, by Country
14.1. United States
14.2. Canada
14.3. Mexico
14.4. Brazil
14.5. United Kingdom
14.6. Germany
14.7. France
14.8. Russia
14.9. Italy
14.10. Spain
14.11. China
14.12. India
14.13. Japan
14.14. Australia
14.15. South Korea
15. Competitive Landscape
15.1. Market Share Analysis, 2024
15.2. FPNV Positioning Matrix, 2024
15.3. Competitive Analysis
15.3.1. AIXTRON SE
15.3.2. Analog Devices, Inc.
15.3.3. Broadcom Inc.
15.3.4. Efficient Power Conversion Corporation
15.3.5. GaNPower International Inc.
15.3.6. Infineon Technologies AG
15.3.7. Infinitum Electric
15.3.8. Kemet Corporation
15.3.9. MaxLinear, Inc.
15.3.10. Microchip Technology Incorporated
15.3.11. Mitsubishi Electric Corporation
15.3.12. Navitas Semiconductor
15.3.13. Nexperia B.V.
15.3.14. NXP Semiconductors N.V.
15.3.15. ON Semiconductor Corporation
15.3.16. Oxford Instruments PLC
15.3.17. Qorvo, Inc.
15.3.18. Renesas Electronics Corporation
15.3.19. ROHM Semiconductor
15.3.20. Sanken Electric Co., Ltd.
15.3.21. STMicroelectronics N.V.
15.3.22. Texas Instruments Incorporated
15.3.23. Toshiba Corporation
15.3.24. Vishay Intertechnology, Inc.
15.3.25. Wolfspeed, Inc.
List of Tables
List of Figures

Samples

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Companies Mentioned

The key companies profiled in this GaN Power Device market report include:
  • AIXTRON SE
  • Analog Devices, Inc.
  • Broadcom Inc.
  • Efficient Power Conversion Corporation
  • GaNPower International Inc.
  • Infineon Technologies AG
  • Infinitum Electric
  • Kemet Corporation
  • MaxLinear, Inc.
  • Microchip Technology Incorporated
  • Mitsubishi Electric Corporation
  • Navitas Semiconductor
  • Nexperia B.V.
  • NXP Semiconductors N.V.
  • ON Semiconductor Corporation
  • Oxford Instruments PLC
  • Qorvo, Inc.
  • Renesas Electronics Corporation
  • ROHM Semiconductor
  • Sanken Electric Co., Ltd.
  • STMicroelectronics N.V.
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • Vishay Intertechnology, Inc.
  • Wolfspeed, Inc.

Table Information