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Ultrawide Bandgap Semiconductors. Semiconductors and Semimetals Volume 107

  • Book
  • August 2021
  • Elsevier Science and Technology
  • ID: 5018887

Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored.

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Table of Contents

1. Fundamental technologies for gallium oxide transistors Masataka Higashiwaki 2. Advanced concepts in Ga2O3 power and RF devices Wenshen Li, Debdeep Jena and Huili Grace Xing 3. -(AlxGa(1-X))2O3 epitaxial growth, doping and transport Nidhin Kurian Kalarickal and Siddharth Rajan 4. Thermal science and engineering of ß-Ga2O3 materials and devices Zhe Cheng, Jingjing Shi, Chao Yuan, Samuel Kim and Samuel Graham 5. Controlling different phases of gallium oxide for solar-blind photodetector application Xiaolong Zhao, Mengfan Ding, Haiding Sun and Shibing Long 6. Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications Yuanpeng Wu, Ping Wang, Emmanouil Kioupakis and Zetian Mi 7. High-Al-content heterostructures and devices Robert Kaplar, Albert Baca, Erica Douglas, Brianna Klein, Andrew Allerman, Mary Crawford and Shahed Reza 8. AlN nonlinear optics and integrated photonics Xianwen Liu, Alexander W. Bruch and Hong. X. Tang 9. Material epitaxy of AlN thin films Shangfeng Liu and Xinqiang Wang 10. Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum Hong Chen, Jingan Zhou, Houqiang Fu and Yuji Zhao 11. AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes Haiding Sun, Feng Wu, Jiangnan Dai and Changqing Chen 12. Electrical transport properties of hexagonal boron nitride epilayers Samuel Grenadier, Avisek Maity, Jing Li, Jingyu Lin and Hongxing Jiang