The global GaN power device market size reached US$ 259 Million in 2022. Looking forward, the analyst expects the market to reach US$ 1,507 Million by 2028, exhibiting a growth rate (CAGR) of 34.2% during 2023-2028.
The gallium nitride (GaN) power device is a high electron mobility (HEMT) transistor that produces electrical energy by the controlling the freely moving electrons in the wide bandgap of the semiconductor. As compared to silicon metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device has lower on-resistance, lesser output capacitance and higher electric-field strength. It also conducts more electrons, reduces switch node ringing and increases efficiency. Besides this, it is compact, fast and lightweight, owing to which it is gaining traction in commercial and industrial applications across various industrial products.
The market is presently being driven by the extensive utilization of GaN power devices in various end use industries. For instance, it is used in the lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). Governments of several countries are introducing stringent policies on greenhouse gas (GHG) emissions, which is boosting the sales of EVs and HEVs around the world. They are also promoting the adoption of energy-efficient devices, which is further influencing the demand for GaN power devices in the defense and aerospace industries. Apart from this, these devices are utilized in radars to enhance navigation, avoid collision and enable real-time air traffic control. Moreover, they are employed in the manufacturing of healthcare scanning equipment, such as sonograms, magnetic resonance imaging (MRI) and miniaturized X-ray machines, to provide precision while performing surgeries. Furthermore, they are used in small cell, distributed antenna systems (DAS) and remote radio head network densification. Besides this, the increasing adoption of the internet of things (IoT) technology, along with the introduction of 5G technology, is expected to create lucrative opportunities for manufacturers in the coming years.
2. What is the expected growth rate of the global GaN power device market during 2023-2028?
3. What has been the impact of COVID-19 on the global GaN power device market?
4. What are the key factors driving the global GaN power device market?
5. What is the breakup of the global GaN power device market based on the end-use industry?
6. What are the key regions in the global GaN power device market?
7. Who are the key players/companies in the global GaN power device market?
The gallium nitride (GaN) power device is a high electron mobility (HEMT) transistor that produces electrical energy by the controlling the freely moving electrons in the wide bandgap of the semiconductor. As compared to silicon metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device has lower on-resistance, lesser output capacitance and higher electric-field strength. It also conducts more electrons, reduces switch node ringing and increases efficiency. Besides this, it is compact, fast and lightweight, owing to which it is gaining traction in commercial and industrial applications across various industrial products.
The market is presently being driven by the extensive utilization of GaN power devices in various end use industries. For instance, it is used in the lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). Governments of several countries are introducing stringent policies on greenhouse gas (GHG) emissions, which is boosting the sales of EVs and HEVs around the world. They are also promoting the adoption of energy-efficient devices, which is further influencing the demand for GaN power devices in the defense and aerospace industries. Apart from this, these devices are utilized in radars to enhance navigation, avoid collision and enable real-time air traffic control. Moreover, they are employed in the manufacturing of healthcare scanning equipment, such as sonograms, magnetic resonance imaging (MRI) and miniaturized X-ray machines, to provide precision while performing surgeries. Furthermore, they are used in small cell, distributed antenna systems (DAS) and remote radio head network densification. Besides this, the increasing adoption of the internet of things (IoT) technology, along with the introduction of 5G technology, is expected to create lucrative opportunities for manufacturers in the coming years.
Key Market Segmentation
The report provides an analysis of the key trends in each sub-segment of the global GaN power device market report, along with forecasts at the global, regional and country level from 2023-2028. Our report has categorized the market based on device type, voltage range, application and end-use industry.Breakup by Device Type:
- Power Device
- Discrete Power Device
- Integrated Power Device
- RF Power Device
- Discrete RF Power Device
- Integrated RF Power Device
Breakup by Voltage Range:
- < 200 Volt
- 200-600 Volt
- >600 Volt
Breakup by Application:
- Power Drives
- Power Supply Systems
- Radio Frequency Based Systems
Breakup by End-Use Industry:
- Telecommunications
- Automotive
- Renewable Power Generation
- Military
- Aerospace and Defense
- Consumer Electronics
- Others
Breakup by Region:
- North America
- United States
- Canada
- Asia Pacific
- China
- Japan
- India
- South Korea
- Australia
- Indonesia
- Others
- Europe
- Germany
- France
- United Kingdom
- Italy
- Spain
- Russia
- Others
- Latin America
- Brazil
- Mexico
- Others
- Middle East and Africa
Competitive Landscape
The report has also analysed the competitive landscape of the market with some of the key players being Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.), etc.Key Questions Answered in This Report
1. What was the size of the global GaN power device market in 2022?2. What is the expected growth rate of the global GaN power device market during 2023-2028?
3. What has been the impact of COVID-19 on the global GaN power device market?
4. What are the key factors driving the global GaN power device market?
5. What is the breakup of the global GaN power device market based on the end-use industry?
6. What are the key regions in the global GaN power device market?
7. Who are the key players/companies in the global GaN power device market?
Table of Contents
1 Preface3 Executive Summary12 Value Chain Analysis14 Price Indicators
2 Scope and Methodology
4 Introduction
5 Global GaN Power Device Market
6 Market Breakup by Device Type
7 Market Breakup by Voltage Range
8 Market Breakup by Application
9 Market Breakup by End-Use Industry
10 Market Breakup by Region
11 SWOT Analysis
13 Porters Five Forces Analysis
15 Competitive Landscape
List of Figures
List of Tables
Companies Mentioned
- Efficient Power Conversion
- GaN Systems Inc.
- IQE
- Koninklijke Philips N.V.
- MACOM Technology Solutions
- Microsemi Corporation (Microchip Technology Inc.)
- Mitsubishi Electric Corporation
- Navitas Semiconductor Inc.
- Qorvo Inc.
- Sumitomo Electric Industries Ltd.
- Texas Instruments Incorporated
- Toshiba Corporation
- Wolfspeed Inc. (Cree Inc.)
Methodology
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Table Information
| Report Attribute | Details |
|---|---|
| No. of Pages | 150 |
| Published | October 2023 |
| Forecast Period | 2022 - 2028 |
| Estimated Market Value ( USD | $ 259 Million |
| Forecasted Market Value ( USD | $ 1507 Million |
| Compound Annual Growth Rate | 34.1% |
| Regions Covered | Global |
| No. of Companies Mentioned | 13 |
