Ongoing Research Report
In the News
September 2016: Spin Memory, Inc. (STT), announced that it has fabricated perpendicular MRAM magnetic tunnel junctions ([MTJs] is the primary component of an MRAM memory cell and core technology of an MRAM device) as small as 20nm which is among the smallest MTJs reported till date.
Introduction to Magneto resistive ram (MRAM)
Magneto resistive ram (MRAM) is a process of storing data bits that uses electron spin to store information which is used by dynamic RAM. It is the result of an amalgamation of advantages of both dynamic RAM and static RAM. Magneto resistive ram (MRAM) has high performance compared to traditional memory devices and are much faster, consume lesser power, and are capable of preventing data loss. Magneto resistive ram (MRAM) technology is robust and reliable over extreme temperature ranges so they are used to assist electronic product to store huge amount of data while ensuring fast accessing speed and consume less battery power.
Market Size and Forecast
Increasing adoption of digitalization and technological advancement such as Internet of Things (IoT) and cloud computing along with the increasing demand for electronic products are some of the significant factors boosting the market growth. According to United States Census Bureau, in 2016, 76% of households had a smartphone and desktop or laptop computers were used by 77% of households.
The magneto resistive ram (MRAM) market is anticipated to record a significant CAGR over the forecast period, i.e., 2020-2028. The market is segmented by application into consumer electronics, aerospace and defence, robotics, enterprise storage, automotive and others. Among these segments, the segment for consumer electronics is anticipated to grow at the highest rate in the magneto resistive ram (MRAM) market as a result of increasing adoption of smartphones, laptops, electronic wearables and digital cameras which utilize advanced memory devices to ensure low energy consumption and reduce the boot up time.
Growth Drivers
Potential to Replace Alternate Memory Products to Boost the Market Growth
Increase in research activities to develop innovative read access memory products such as embedded and discrete MRAMs fuels the growth of market. Additionally, the magneto resistive ram (MRAM) holds the potential to replace flash memory and other electrically erasable programmable read-only memory (EEPROM). This is anticipated to significantly expand the magneto resistive ram (MRAM) market.
By Region
On the basis of regional analysis, the magneto resistive ram (MRAM) market is segmented into five major regions including North America, Europe, Asia Pacific, Latin America and Middle East & Africa region.
The market for magneto resistive ram (MRAM) in North America is anticipated to hold the largest share in the market on account of presence of leading market players in the region which manufacture and market magneto resistive ram (MRAM). Moreover, the enterprises are shifting towards data centres in order to reduce the cost of technology infrastructure and to achieve faster computation, lesser power consumption and better scalability which further increases the product demand. The market in Asia Pacific region is predicted to grow at the highest rate during the forecast period as a result of advancements in infrastructure of data centres and information technology hubs. Additionally, the increased usage of internet and penetration of cloud computing along with the large number of memory manufacturers in the countries such as China and India owing to ample availability of raw material and cheap labour, further raise the demand for magneto resistive ram (MRAM) market.
The magneto resistive ram (MRAM) market is further classified on the basis of region as follows:
In the News
September 2016: Spin Memory, Inc. (STT), announced that it has fabricated perpendicular MRAM magnetic tunnel junctions ([MTJs] is the primary component of an MRAM memory cell and core technology of an MRAM device) as small as 20nm which is among the smallest MTJs reported till date.
Introduction to Magneto resistive ram (MRAM)
Magneto resistive ram (MRAM) is a process of storing data bits that uses electron spin to store information which is used by dynamic RAM. It is the result of an amalgamation of advantages of both dynamic RAM and static RAM. Magneto resistive ram (MRAM) has high performance compared to traditional memory devices and are much faster, consume lesser power, and are capable of preventing data loss. Magneto resistive ram (MRAM) technology is robust and reliable over extreme temperature ranges so they are used to assist electronic product to store huge amount of data while ensuring fast accessing speed and consume less battery power.
Market Size and Forecast
Increasing adoption of digitalization and technological advancement such as Internet of Things (IoT) and cloud computing along with the increasing demand for electronic products are some of the significant factors boosting the market growth. According to United States Census Bureau, in 2016, 76% of households had a smartphone and desktop or laptop computers were used by 77% of households.
The magneto resistive ram (MRAM) market is anticipated to record a significant CAGR over the forecast period, i.e., 2020-2028. The market is segmented by application into consumer electronics, aerospace and defence, robotics, enterprise storage, automotive and others. Among these segments, the segment for consumer electronics is anticipated to grow at the highest rate in the magneto resistive ram (MRAM) market as a result of increasing adoption of smartphones, laptops, electronic wearables and digital cameras which utilize advanced memory devices to ensure low energy consumption and reduce the boot up time.
Growth Drivers
Potential to Replace Alternate Memory Products to Boost the Market Growth
Increase in research activities to develop innovative read access memory products such as embedded and discrete MRAMs fuels the growth of market. Additionally, the magneto resistive ram (MRAM) holds the potential to replace flash memory and other electrically erasable programmable read-only memory (EEPROM). This is anticipated to significantly expand the magneto resistive ram (MRAM) market.
By Region
On the basis of regional analysis, the magneto resistive ram (MRAM) market is segmented into five major regions including North America, Europe, Asia Pacific, Latin America and Middle East & Africa region.
The market for magneto resistive ram (MRAM) in North America is anticipated to hold the largest share in the market on account of presence of leading market players in the region which manufacture and market magneto resistive ram (MRAM). Moreover, the enterprises are shifting towards data centres in order to reduce the cost of technology infrastructure and to achieve faster computation, lesser power consumption and better scalability which further increases the product demand. The market in Asia Pacific region is predicted to grow at the highest rate during the forecast period as a result of advancements in infrastructure of data centres and information technology hubs. Additionally, the increased usage of internet and penetration of cloud computing along with the large number of memory manufacturers in the countries such as China and India owing to ample availability of raw material and cheap labour, further raise the demand for magneto resistive ram (MRAM) market.
The magneto resistive ram (MRAM) market is further classified on the basis of region as follows:
- North America (U.S. & Canada) Market size, Y-O-Y growth & Opportunity Analysis
- Latin America (Brazil, Mexico, Argentina, Rest of Latin America) Market size, Y-O-Y growth & Opportunity Analysis
- Europe (U.K., Germany, France, Italy, Spain, Hungary, Belgium, Netherlands & Luxembourg, NORDIC, Poland, Turkey, Russia, Rest of Europe) Market size, Y-O-Y growth & Opportunity Analysis
- Asia-Pacific (China, India, Japan, South Korea, Indonesia, Malaysia, Australia, New Zealand, Rest of Asia-Pacific) Market size, Y-O-Y growth & Opportunity Analysis.
- Middle East and Africa (Israel, GCC (Saudi Arabia, UAE, Bahrain, Kuwait, Qatar, Oman), North Africa, South Africa, Rest of Middle East and Africa) Market size, Y-O-Y growth & Opportunity Analysis.
Companies Mentioned
- Intel Corporation
- Hewlett Packard Enterprise Development LP
- Everspin Technologies Inc.
- Qualcomm Technologies, Inc.
- Avalanche Technology
- Honeywell International Inc.
- NVE Corporation
- Toshiba Corporation
- Crocus Nano Electronics LLC
- Infineon Technologies AG
- Spin Memory Inc.
- Other Notable Players
Please note the number of players as well as the addition/deletion can be done in the final deliverable as per the feasibility
