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Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics. Woodhead Publishing Series in Electronic and Optical Materials

  • Book

  • April 2021
  • Elsevier Science and Technology
  • ID: 5146410

Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering.

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Table of Contents

1.�Historical evolution of pulsed laser annealing for semiconductor processing
Guglielmo Fortunato, Luigi Mariucci, Alessandro Pecora, Vittorio Privitera, and Frank Simon
2.�Laser-matter interactions
Spyros Stathopoulos and Dimitris Tsoukalas
3.�Atomistic modeling of laser-related phenomena
Luis A.Marqu�s, Mar�a Aboy, Pedro L�pez, Iv�n Santos, Lourdes Pelaz, Giuseppe Fisicaro
4.�Laser annealing applications for semiconductor devices manufacturing
Karim Huet
5.�Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors
Ray Duffy, Enrico Napolitani, and Fuccio Cristiano
6.�Continuum modeling and TCAD simulations of laser-related phenomena in CMOS applications
Salvatore Francesco Lombardo, Ioannis Deretzis, Alberto Sciuto, and Antonino La Magna
7.�Laser engineering of carbon materials for optoelectronic applications
Fr�d�ric Antoni and Fran�ois Stock
8.�Optical hyperdoping
Wenjie Yang, Shao Qi Lim, and Jim S. Williams
9.�Laser ultra-doped silicon: Superconductivity and applications
Francesca Chiodi, Richard Daubriac and S�bastien Kerdil�s


Fuccio Cristiano LAAS-CNRS Toulouse, France. Fuccio Cristiano received his Ph.D. degree from the University of Surrey, U.K., in 1998. From 1998 to 2000, he worked in the CEMES/CNRS laboratory of Toulouse, France. In 2000, he joined the LAAS/CNRS laboratory of Toulouse, where he has managed the research team "Materials and Processes for Nanoelectronics� from 2012 to 2016.

His research interests concern the investigation of advanced doping techniques in semiconductors (with special focus on ultra-rapid thermal processes) and the impact of process-related defects on dopant activation anomalies. He has authored or coauthored about 130 papers in scientific journals and has given several invited presentations on Ion beam induced defects in silicon. Antonino La Magna Consiglio Nazionale delle Ricerche (CNR), Italy. Antonino La Magna received his master's in physics (cum laude) and his Ph.D. in Physics at the University of Catania in1992 and 1996, respectively. Since 1999, he has been a member of the permanent staff at the Institute for the Microelectronics and Microsystems of the Italian National Council of Research (CNR-IMM), where he is responsible of the computational team and resources (1999-Today). Currently, he also leads the research group on advanced processes (2010-Today). He is and has been coordinator and responsible for the CNR-IMM of several international projects and contract research on behalf of industry.
He has authored over more than 270 publications in international journals in the fields of theoretical solid state physics, technological processes and process and device simulations, and he is a frequently invited speaker at international conferences.