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The publisher has been monitoring the wide-bandgap (WBG) power semiconductor devices market and it is poised to grow by $ 4.71 bn during 2022-2026, accelerating at a CAGR of 35.12% during the forecast period. The report on the wide-bandgap (WBG) power semiconductor devices market provides a holistic analysis, market size and forecast, trends, growth drivers, and challenges, as well as vendor analysis covering around 25 vendors.Speak directly to the analyst to clarify any post sales queries you may have.
The report offers an up-to-date analysis of the current global market scenario, the latest trends and drivers, and the overall market environment. The market is driven by increasing demand for high-power density devices, strategic collaborations among market participants, and government initiatives supporting the development of WBG power semiconductors.
The wide-bandgap (WBG) power semiconductor devices market analysis includes application segment and geographic landscape.
The analyst's wide-bandgap (WBG) power semiconductor devices market is segmented as below:
By Application:
- UPS and PS systems
- PV inverters
- IMDs
- EVs or HEVS
- Others
By Geographical Landscape:
- APAC
- Europe
- North America
- South America
- The Middle East and Africa
This study identifies the growing implementation of signal processing applications as one of the prime reasons driving the wide-bandgap (WBG) power semiconductor devices market growth during the next few years. Also, increased demand for vehicles that operate on alternative fuels and focus on moving toward larger wafers will lead to sizable demand in the market.
The publisher presents a detailed picture of the market by the way of study, synthesis, and summation of data from multiple sources by an analysis of key parameters. The report on the wide-bandgap (WBG) power semiconductor devices market covers the following areas:
- Wide-bandgap (WBG) power semiconductor devices market sizing
- Wide-bandgap (WBG) power semiconductor devices market forecast
- Wide-bandgap (WBG) power semiconductor devices market industry analysis
The analyst's robust vendor analysis is designed to help clients improve their market position, and in line with this, this report provides a detailed analysis of several leading wide-bandgap (WBG) power semiconductor devices market vendors that include Cree Inc., Fuji Electric Co. Ltd., GaN Systems Inc., GeneSiC Semiconductor Inc., Hitachi Ltd., Infineon Technologies AG, Littelfuse Inc., Microchip Technology Inc., Mitsubishi Chemical Holdings Corp., Nexperia BV, ON Semiconductor Corp., Qorvo Inc., ROHM Co. Ltd., Skyworks Solutions Inc., STMicroelectronics International NV, Texas Instruments Inc., Toshiba Corp., and Transphorm Inc. Also, the wide-bandgap (WBG) power semiconductor devices market analysis report includes information on upcoming trends and challenges that will influence market growth. This is to help companies strategize and leverage all forthcoming growth opportunities.
The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to an analysis of the key vendors.
The publisher presents a detailed picture of the market by the way of study, synthesis, and summation of data from multiple sources by an analysis of key parameters such as profit, pricing, competition, and promotions. It presents various market facets by identifying the key industry influencers. The data presented is comprehensive, reliable, and a result of extensive research - both primary and secondary.
The analyst's market research reports provide a complete competitive landscape and an in-depth vendor selection methodology and analysis using qualitative and quantitative research to forecast accurate market growth.
Table of Contents
1 Executive Summary
2 Market Landscape
3 Market Sizing
4 Five Forces Analysis
5 Market Segmentation by Application
6 Customer Landscape
7 Geographic Landscape
8 Drivers, Challenges, and Trends
9 Vendor Landscape
10 Vendor Analysis
11 Appendix
List of Exhibits
Executive Summary
The publisher recognizes the following companies as the key players in the global wide-bandgap (WBG) power semiconductor devices market: Cree Inc., Fuji Electric Co. Ltd., GaN Systems Inc., GeneSiC Semiconductor Inc., Hitachi Ltd., Infineon Technologies AG, Littelfuse Inc., Microchip Technology Inc., Mitsubishi Chemical Holdings Corp., Nexperia BV, ON Semiconductor Corp., Qorvo Inc., ROHM Co. Ltd., Skyworks Solutions Inc., STMicroelectronics International NV, Texas Instruments Inc., Toshiba Corp., and Transphorm Inc.Commenting on the report, an analyst said: "The latest trend gaining momentum in the market is growing implementation of signal processing applications."
According to the report, one of the major drivers for this market is the increasing demand for high-power density devices.
The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
Companies Mentioned (Partial List)
A selection of companies mentioned in this report includes, but is not limited to:
- Cree Inc.
- Fuji Electric Co. Ltd.
- GaN Systems Inc.
- GeneSiC Semiconductor Inc.
- Hitachi Ltd.
- Infineon Technologies AG
- Littelfuse Inc.
- Microchip Technology Inc.
- Mitsubishi Chemical Holdings Corp.
- Nexperia BV
- ON Semiconductor Corp.
- Qorvo Inc.
- ROHM Co. Ltd.
- Skyworks Solutions Inc.
- STMicroelectronics International NV
- Texas Instruments Inc.
- Toshiba Corp.
- Transphorm Inc.
