The global ferroelectric RAM market size reached US$ 324.1 Million in 2023. Looking forward, the publisher expects the market to reach US$ 425.1 Million by 2032, exhibiting a growth rate (CAGR) of 3.6% during 2023-2032.
A ferroelectric random-access memory (RAM), or FRAM, refers to a RAM that provides faster read-and-write access of dynamic RAM. It consists of a thin ferroelectric film made of lead zirconate titanate (PZT), a bit line and a capacitor connected to a plate. Serial and parallel memory are two of the primarily used FRAM, which are installed in consumer electronics, such as personal digital assistants (PDAs), smartphones and wireless products, smart meters, automobile electronics, smart cards and medical and wearable devices. In comparison to the traditionally used flash drives, FRAM consumes lesser power and offers a higher number of write-erase cycles and faster write performance.
Significant growth in the information technology (IT) industry across the globe represents one of the key factors creating a positive outlook for the market. Furthermore, the widespread adoption of electronic handheld devices is also driving the market growth. Smart meter manufacturers are also adopting FRAM to operate battery-powered wireless sensors to increase the operational life and minimize the overall maintenance costs. This, in turn, is further strengthening the market growth. Additionally, various technological advancements, such as the integration of the Industrial Internet of Things (IIoT) and cloud computing solutions with connected devices, are acting as other growth-inducing factors.
Modern FRAM is being used for applications that require continuous, high-frequency and highly reliable data logging for the test and measurement of factory equipment and non-volatile data capture of industrial processes. Other factors, including increasing industrial automation, along with extensive research and development (R&D) activities, are anticipated to drive the market further.
2. What is the expected growth rate of the global ferroelectric RAM market during 2024-2032?
3. What are the key factors driving the global ferroelectric RAM market?
4. What has been the impact of COVID-19 on the global ferroelectric RAM market?
5. What is the breakup of the global ferroelectric RAM market based on the type?
6. What is the breakup of the global ferroelectric RAM market based on the application?
7. What are the key regions in the global ferroelectric RAM market?
8. Who are the key players/companies in the global ferroelectric RAM market?
A ferroelectric random-access memory (RAM), or FRAM, refers to a RAM that provides faster read-and-write access of dynamic RAM. It consists of a thin ferroelectric film made of lead zirconate titanate (PZT), a bit line and a capacitor connected to a plate. Serial and parallel memory are two of the primarily used FRAM, which are installed in consumer electronics, such as personal digital assistants (PDAs), smartphones and wireless products, smart meters, automobile electronics, smart cards and medical and wearable devices. In comparison to the traditionally used flash drives, FRAM consumes lesser power and offers a higher number of write-erase cycles and faster write performance.
Significant growth in the information technology (IT) industry across the globe represents one of the key factors creating a positive outlook for the market. Furthermore, the widespread adoption of electronic handheld devices is also driving the market growth. Smart meter manufacturers are also adopting FRAM to operate battery-powered wireless sensors to increase the operational life and minimize the overall maintenance costs. This, in turn, is further strengthening the market growth. Additionally, various technological advancements, such as the integration of the Industrial Internet of Things (IIoT) and cloud computing solutions with connected devices, are acting as other growth-inducing factors.
Modern FRAM is being used for applications that require continuous, high-frequency and highly reliable data logging for the test and measurement of factory equipment and non-volatile data capture of industrial processes. Other factors, including increasing industrial automation, along with extensive research and development (R&D) activities, are anticipated to drive the market further.
Key Market Segmentation:
The publisher provides an analysis of the key trends in each sub-segment of the global ferroelectric RAM market report, along with forecasts at the global, regional and country level from 2024-2032. Our report has categorized the market based on type, application and end use.Breakup by Type:
- Serial Memory
- Parallel Memory
- Others
Breakup by Application:
- Mass Storage
- Embedded Storage
- Others
Breakup by End Use:
- Security Systems
- Energy Meters
- Smart Cards
- Consumer Electronics
- Wearable Electronics
- Automotive Electronics
- Others
Breakup by Region:
- North America
- United States
- Canada
- Asia Pacific
- China
- Japan
- India
- South Korea
- Australia
- Indonesia
- Others
- Europe
- Germany
- France
- United Kingdom
- Italy
- Spain
- Russia
- Others
- Latin America
- Brazil
- Mexico
- Others
- Middle East and Africa
Competitive Landscape:
The report has also analysed the competitive landscape of the market with some of the key players being Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation.Key Questions Answered in This Report
1. What was the size of the global ferroelectric RAM market in 2023?2. What is the expected growth rate of the global ferroelectric RAM market during 2024-2032?
3. What are the key factors driving the global ferroelectric RAM market?
4. What has been the impact of COVID-19 on the global ferroelectric RAM market?
5. What is the breakup of the global ferroelectric RAM market based on the type?
6. What is the breakup of the global ferroelectric RAM market based on the application?
7. What are the key regions in the global ferroelectric RAM market?
8. Who are the key players/companies in the global ferroelectric RAM market?
Table of Contents
1 Preface3 Executive Summary11 Value Chain Analysis13 Price Analysis
2 Scope and Methodology
4 Introduction
5 Global Ferroelectric RAM Market
6 Market Breakup by Type
7 Market Breakup by Application
8 Market Breakup by End Use
9 Market Breakup by Region
10 SWOT Analysis
12 Porters Five Forces Analysis
14 Competitive Landscape
List of Figures
List of Tables
Companies Mentioned
- Fujitsu Limited (Furukawa Group)
- Infineon Technologies AG
- International Business Machines Corporation
- LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor)
- Samsung Electronics Co. Ltd.
- Texas Instruments Incorporated
- Toshiba Corporation
Table Information
| Report Attribute | Details |
|---|---|
| No. of Pages | 135 |
| Published | August 2024 |
| Forecast Period | 2023 - 2032 |
| Estimated Market Value ( USD | $ 324.1 Million |
| Forecasted Market Value ( USD | $ 425.1 Million |
| Compound Annual Growth Rate | 3.1% |
| Regions Covered | Global |
| No. of Companies Mentioned | 7 |
