GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students.
Table of Contents
Part I: Introduction1. GaN Device Physics
2. GaN HEMT Models
Part II: ASM-HEMT Model
3. Surface Potential, 2DEG, and Drain Current Model�
4. Self-Heating and Temperature Effects
5. Noise and Gate Current
Part III: ASM-HEMT for GaN Power Electronics�
6. GaN Power Device Characterization
7. Terminal Charges and Capacitances
8. TCAD Simulation
9. Switching Collapse
Part IV: ASM-HEMT for GaN RF Electronics
10. Characterization of RF GaN HEMTs
11. RF Modeling-I�
12. RF Modeling-II
Part V: Miscellaneous
13. Parameter Extraction
14. Model Quality Testing
Authors
Yogesh Singh Chauhan Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India.Yogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design. He is the developer of several industry standard models, including the BSIM-BULK (BSIM6), BSIM-IMG, BSIM-CMG and ASM-HEMT models.
Ahtisham Ul Haq Pampori Department of Electrical Engineering, Indian Institute of Technology, Kanpur, U.P., India. Ahtisham Pampori is a doctoral student at the Indian Institute of Technology Kanpur (IIT Kanpur), currently working on the characterization and modeling of GaN HEMT RF devices. He is one of the developers of ASM-HEMT, an industry standard model for AlGaN/GaN HEMTs. His research is focused on the modeling and characterization of GaN HEMTs and their applications in RF systems. He is a recipient of the prestigious Prime Minister's Research Fellowship (PMRF). He holds his bachelor's degree in Electronics and Communications Engineering from NIT Srinagar. Sheikh Aamir Ahsan Assistant Professor, Department of Electronics and Communication Engineering, National Institute of Technology Srinagar, Hazratbal, Srinagar, India. Sheikh Aamir Ahsan received his PhD from Nanolab, Indian Institute of Technology Kanpur in 2017. He is currently an Assistant Professor of Electronics and Communication Engineering with the National Institute of Technology Srinagar, where he is involved in nanoelectronic device - simulation and theoretical modeling for circuit design. He was a visiting researcher with Keysight Technologies in 2016 and a postdoc at the New York University in 2018. He is the co-developer of the Industry Standard ASM-GaN-HEMT Model and also the winner of the Science and Engineering Research Board Early Career Research Award 2019.
