A high electron mobility transistor (HEMT) is a field effect transistor which incorporates a junction between two types with different band gaps as the channel instead of a doped region. The primary characteristics of a HEMT device includes operation at higher frequencies, and hence it is used in high frequency equipment like mobile phones, satellite television receivers, voltage converters, and radar equipment.
Ample investments and developments on HEMTs by key players is expected to drive the growth of the HEMT market. However, lack of standard techniques to produce and develop HEMT devices is expected to pose major threats for the market. Furthermore, high demand for new HEMT technologies in defense and automotive industry are expected to offer lucrative opportunities for the growth of the global high electron mobility transistor (HEMT) market.
The global high electron mobility transistor (HEMT) market is segmented on the basis of type and end user. By type, the market is divided into gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs) and others. By end user, the market is analyzed across consumer electronics, automotive, industrial, aerospace & defense and others.
Region wise, the High Electron Mobility Transistor (HEMT) market trends are analyzed across North America (U.S., Canada, and Mexico), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, India, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa). North America accounted for the highest share, owing to the expansion of the electronics market and rise in sales of EVs.
The key players operating in the market includes include Infineon, Intel Corporation, Microsemi, Mitsubishi, NXP Semiconductor N.V., Qorvo, Renesas Electronics, ST Microelectronics, Texas Instruments and Wolfspeed are provided in this report.
Ample investments and developments on HEMTs by key players is expected to drive the growth of the HEMT market. However, lack of standard techniques to produce and develop HEMT devices is expected to pose major threats for the market. Furthermore, high demand for new HEMT technologies in defense and automotive industry are expected to offer lucrative opportunities for the growth of the global high electron mobility transistor (HEMT) market.
The global high electron mobility transistor (HEMT) market is segmented on the basis of type and end user. By type, the market is divided into gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs) and others. By end user, the market is analyzed across consumer electronics, automotive, industrial, aerospace & defense and others.
Region wise, the High Electron Mobility Transistor (HEMT) market trends are analyzed across North America (U.S., Canada, and Mexico), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, India, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa). North America accounted for the highest share, owing to the expansion of the electronics market and rise in sales of EVs.
The key players operating in the market includes include Infineon, Intel Corporation, Microsemi, Mitsubishi, NXP Semiconductor N.V., Qorvo, Renesas Electronics, ST Microelectronics, Texas Instruments and Wolfspeed are provided in this report.
KEY BENEFITS FOR STAKEHOLDERS
- This report provides a quantitative analysis of the market segments, current trends, estimations, and dynamics of the high electron mobility transistor market analysis from 2021 to 2031 to identify the prevailing high electron mobility transistor market opportunities.
- The market research is offered along with information related to key drivers, restraints, and opportunities.
- Porter's five forces analysis highlights the potency of buyers and suppliers to enable stakeholders make profit-oriented business decisions and strengthen their supplier-buyer network.
- In-depth analysis of the high electron mobility transistor market segmentation assists to determine the prevailing market opportunities.
- Major countries in each region are mapped according to their revenue contribution to the global market.
- Market player positioning facilitates benchmarking and provides a clear understanding of the present position of the market players.
- The report includes the analysis of the regional as well as global high electron mobility transistor market trends, key players, market segments, application areas, and market growth strategies.
Key Market Segments
By Type
- Gallium Nitride (GaN)
- Silicon Carbide (SiC)
- Gallium Arsenide (GaAs)
- Others
By End User
- Others
- Consumer Electronics
- Automotive
- Industrial
- Aerospace and Defense
By Region
- North America
- U.S.
- Canada
- Mexico
- Europe
- UK
- Germany
- France
- Rest Of Europe
- Asia-Pacific
- Rest Of Asia-Pacific
- China
- Japan
- India
- South Korea
- LAMEA
- Latin America
- Middle East
- Africa
Key Market Players
- Qorvo
- Infineon
- Mitsubishi
- Microsemi
- Wolfspeed
- NXP SEMICONDUCTORS
- ST Microelectronics
- Texas Instruments
- Intel Corporation
- Renesas Electronics
Table of Contents
CHAPTER 1: INTRODUCTION
CHAPTER 2: EXECUTIVE SUMMARY
CHAPTER 3: MARKET OVERVIEW
CHAPTER 4: HIGH ELECTRON MOBILITY TRANSISTOR MARKET, BY TYPE
CHAPTER 5: HIGH ELECTRON MOBILITY TRANSISTOR MARKET, BY END USER
CHAPTER 6: HIGH ELECTRON MOBILITY TRANSISTOR MARKET, BY REGION
CHAPTER 7: COMPANY LANDSCAPE
CHAPTER 8: COMPANY PROFILES
List of Tables
List of Figures
Executive Summary
According to the high electron mobility transistor market analysis, ample investments and developments of HEMTs devices by key players is expected to drive the growth of the HEMT market. However, lack of standard techniques to produce and develop HEMT devices is expected to pose major threats for the market. Furthermore, high demand for new HEMT technologies in defense and automotive industry are expected to offer lucrative opportunities for the growth of the global high electron mobility transistor market.By type, the market is divided into gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs) and others. The gallium nitride (GaN) segment was the highest revenue contributor, accounting for $2,739.30 million in 2021, and is estimated to reach $4,384.90 million by 2031, with a CAGR of 4.87%. This is due to the requirement of GaN HEMTs in electric and hybrid vehicles
The outbreak of COVID-19 has significantly impacted the growth of the high electron mobility transistor industry, owing to significant impact on leading market participants. Contrariwise, rise in demand for electric vehicle solution in emerging countries such as India, France and Mexico is expected to have an impact to the high electron mobility transistor market trends post pandemic. However, lack of accessibility of a proficient workforce because of the partial and complete lockdown instigated by governmental bodies hindered the growth of the high electron mobility transistor market. On the contrary, the evolving economies ominously witness the need for consumer and industrial electronics solutions that is expected to boost the high electron mobility transistor market.
Region-wise, Asia-Pacific holds the top position in the global high electron mobility transistor market size, owing to the organizations taking various initiatives to build power infrastructure with advanced technologies. Organizations across verticals have realized the importance of HEMT transistor power devices to ensure power management. High demand for automated switching devices and power modules is expected to boost the high electron mobility transistor market growth.
Key Findings of the Study
- In 2021, the gallium nitride (GaN) accounted for maximum high electron mobility transistor market share, and is projected to grow at a notable CAGR of 4.87% during the forecast period.
- The gallium nitride (GaN) and silicon carbide (SiC) segments together accounted for around 73.3% of the High Electron Mobility Transistor (HEMT) market share in 2021.
- Asia-Pacific contributed for the major share in the High Electron Mobility Transistor (HEMT) market, accounting for around 51.3% share in 2021.
- The key players profiled in the report include Infineon, Intel Corporation, Microsemi, Mitsubishi, NXP Semiconductor N.V., Qorvo, Renesas Electronics, ST Microelectronics, Texas Instruments and Wolfspeed. Market players have adopted various strategies, such as product launch, collaboration& partnership, joint venture, and acquisition, to expand their foothold in the High Electron Mobility Transistor (HEMT) market.
Companies Mentioned
- Qorvo
- Infineon
- Mitsubishi
- Microsemi
- Wolfspeed
- Nxp Semiconductors
- St Microelectronics
- Texas Instruments
- Intel Corporation
- Renesas Electronics
Methodology
The analyst offers exhaustive research and analysis based on a wide variety of factual inputs, which largely include interviews with industry participants, reliable statistics, and regional intelligence. The in-house industry experts play an instrumental role in designing analytic tools and models, tailored to the requirements of a particular industry segment. The primary research efforts include reaching out participants through mail, tele-conversations, referrals, professional networks, and face-to-face interactions.
They are also in professional corporate relations with various companies that allow them greater flexibility for reaching out to industry participants and commentators for interviews and discussions.
They also refer to a broad array of industry sources for their secondary research, which typically include; however, not limited to:
- Company SEC filings, annual reports, company websites, broker & financial reports, and investor presentations for competitive scenario and shape of the industry
- Scientific and technical writings for product information and related preemptions
- Regional government and statistical databases for macro analysis
- Authentic news articles and other related releases for market evaluation
- Internal and external proprietary databases, key market indicators, and relevant press releases for market estimates and forecast
Furthermore, the accuracy of the data will be analyzed and validated by conducting additional primaries with various industry experts and KOLs. They also provide robust post-sales support to clients.
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