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Next Generation Non-Volatile Memory Market - Global Forecast 2025-2032

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    Report

  • 199 Pages
  • October 2025
  • Region: Global
  • 360iResearch™
  • ID: 5674212
UP TO OFF until Jan 01st 2026
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The next generation non-volatile memory market is evolving rapidly as innovative memory technologies address enterprise demand for speed, data persistence, and energy-efficient storage—shaping the future of data management across multiple industries.

Market Snapshot: Next Generation Non-Volatile Memory

The next generation non-volatile memory market has demonstrated robust momentum, moving from USD 9.79 billion in 2024 to USD 11.63 billion in 2025. With an 18.87% compound annual growth rate, the sector is on track to reach USD 39.07 billion by 2032. This sustained innovation cycle reflects surging relevance across diverse industries and increasing investments in advanced digital storage solutions.

Scope & Segmentation of the Market

This comprehensive report explores both the breadth and depth of the non-volatile memory ecosystem, capturing emerging trends, segment-specific opportunities, and market coverage across global business environments.

  • Memory Technologies: Ferroelectric random access memory, magnetoresistive random access memory, phase change memory, resistive random access memory.
  • Applications: Aerospace and defense (avionics, satellites and space systems), automotive (advanced driver assistance systems, engine control units, infotainment systems), consumer electronics (gaming devices, smartphones, tablets, wearables), data center storage (edge, enterprise, hyperscale cloud storage), healthcare (diagnostic devices, medical imaging, patient monitoring), industrial (automation systems, infrastructure, robotics), telecommunication (5G infrastructure, base stations, network edge).
  • Interface Types: NVMe, PCIe, SAS, SATA, USB protocols for a range of latency and connectivity requirements.
  • Form Factors: 2.5 inch, add-in card, BGA, M.2, U.2 formats adapting to various integration preferences.
  • Deployment Models: Cloud-based solutions and on-premises installations, balancing flexibility and security.
  • Regional Coverage: Americas (United States, Canada, Mexico, Brazil, Argentina, Chile, Colombia, Peru), Europe, Middle East & Africa (United Kingdom, Germany, France, Russia, Italy, Spain, Netherlands, Sweden, Poland, Switzerland, United Arab Emirates, Saudi Arabia, Qatar, Turkey, Israel, South Africa, Nigeria, Egypt, Kenya), Asia-Pacific (China, India, Japan, Australia, South Korea, Indonesia, Thailand, Malaysia, Singapore, Taiwan).
  • Key Companies: Samsung Electronics, SK hynix, Micron Technology, Kioxia, Western Digital, Intel, Everspin Technologies, Infineon Technologies, STMicroelectronics, Macronix International.

Key Takeaways for Senior Decision-Makers

  • Next generation non-volatile memory addresses essential requirements for high-speed, persistent, and energy-efficient data storage in sectors such as automotive, aerospace, healthcare, and cloud infrastructure.
  • Technological advancements in ferroelectric, magnetoresistive, phase change, and resistive memory have enabled new system architectures, supporting in-memory computing and edge deployments where data integrity and resilience are critical.
  • Collaborations between semiconductor manufacturers, foundries, and integrators are accelerating co-development of application-specific memory solutions, allowing for optimized performance in diverse use cases.
  • Software and hardware stakeholders are adopting unified memory architectures, which support the transition from traditional storage hierarchies to more integrated, data-centric operations.
  • Market participants are differentiating through customization, embedded security, modular designs, and support services—reinforcing supply chain resilience and customer loyalty.

Tariff Impact: Strategic Considerations for 2025 and Beyond

United States tariffs scheduled for 2025 introduce new operational complexities for memory manufacturers and device integrators. Strategic responses include assessing nearshoring, diversifying supply bases, and fostering in-country partnerships to ensure continuity and optimized R&D investments. These approaches support geographic resilience and reduce exposure to potential cost escalations throughout the memory supply chain. Industry consortia and regulators play a vital role in shaping supportive policies and standardization efforts during this adjustment phase.

Methodology & Data Sources

This report blends extensive secondary research—including technical literature, patent reviews, and industry agreements—with primary interviews among executives, R&D leaders, and systems architects. Ongoing expert validation and data triangulation underpin the accuracy, reliability, and practical relevance of all findings presented.

Why This Report Matters

  • Provides a precise, actionable framework for technology planning and investment across next generation memory segments, grounded in real-world market trajectories.
  • Enables decision-makers to benchmark against leading companies and predict how tariffs and supply shifts might affect value chain stability and strategic partnerships.
  • Equips leaders with segmentation, deployment and regional insights for agile responses as regulatory, technical, and application landscapes shift.

Conclusion

Next generation non-volatile memory technologies are reshaping data storage and computing architectures, offering foundational benefits for performance-driven industries. Organizations that align strategies with these trends are better positioned for growth and long-term resilience.

 

Additional Product Information:

  • Purchase of this report includes 1 year online access with quarterly updates.
  • This report can be updated on request. Please contact our Customer Experience team using the Ask a Question widget on our website.

Table of Contents

1. Preface
1.1. Objectives of the Study
1.2. Market Segmentation & Coverage
1.3. Years Considered for the Study
1.4. Currency & Pricing
1.5. Language
1.6. Stakeholders
2. Research Methodology
3. Executive Summary
4. Market Overview
5. Market Insights
5.1. Adoption of 3D XPoint-based storage tiers to accelerate high-performance computing workflows
5.2. Development of embedded MRAM solutions for low-power IoT devices with instant data retention
5.3. Commercial rollout of RRAM memory modules for neuromorphic computing applications
5.4. Implementation of ferroelectric FET memory in edge AI accelerators to reduce latency
5.5. Integration of phase change memory for in-memory computing in data-intensive analytics
5.6. Advancements in security features for non-volatile memory to counter hardware-level attacks
5.7. Scaling challenges and solutions in sub-nanometer architectures for next-gen NAND flash
5.8. Partnerships between semiconductor foundries and startups to mass-produce CBRAM technology
6. Cumulative Impact of United States Tariffs 2025
7. Cumulative Impact of Artificial Intelligence 2025
8. Next Generation Non-Volatile Memory Market, by Memory Technology
8.1. Ferroelectric Random Access Memory
8.2. Magnetoresistive Random Access Memory
8.3. Phase Change Memory
8.4. Resistive Random Access Memory
9. Next Generation Non-Volatile Memory Market, by Application
9.1. Aerospace & Defense
9.1.1. Avionics
9.1.2. Satellites & Space Systems
9.2. Automotive
9.2.1. Advanced Driver Assistance Systems
9.2.2. Engine Control Units
9.2.3. Infotainment Systems
9.3. Consumer Electronics
9.3.1. Gaming Devices
9.3.2. Smartphones
9.3.3. Tablets
9.3.4. Wearables
9.4. Data Center Storage
9.4.1. Edge Storage
9.4.2. Enterprise Storage
9.4.3. Hyperscale Cloud Storage
9.5. Healthcare
9.5.1. Diagnostic Devices
9.5.2. Medical Imaging
9.5.3. Patient Monitoring
9.6. Industrial
9.6.1. Automation Systems
9.6.2. Infrastructure
9.6.3. Robotics
9.7. Telecommunication
9.7.1. 5G Infrastructure
9.7.2. Base Stations
9.7.3. Network Edge
10. Next Generation Non-Volatile Memory Market, by Interface Type
10.1. Nvme
10.2. Pcie
10.3. Sas
10.4. Sata
10.5. Usb
11. Next Generation Non-Volatile Memory Market, by Form Factor
11.1. 2.5 Inch
11.2. Add In Card
11.3. Bga
11.4. M2
11.5. U2
12. Next Generation Non-Volatile Memory Market, by Deployment
12.1. Cloud
12.2. On Premises
13. Next Generation Non-Volatile Memory Market, by Region
13.1. Americas
13.1.1. North America
13.1.2. Latin America
13.2. Europe, Middle East & Africa
13.2.1. Europe
13.2.2. Middle East
13.2.3. Africa
13.3. Asia-Pacific
14. Next Generation Non-Volatile Memory Market, by Group
14.1. ASEAN
14.2. GCC
14.3. European Union
14.4. BRICS
14.5. G7
14.6. NATO
15. Next Generation Non-Volatile Memory Market, by Country
15.1. United States
15.2. Canada
15.3. Mexico
15.4. Brazil
15.5. United Kingdom
15.6. Germany
15.7. France
15.8. Russia
15.9. Italy
15.10. Spain
15.11. China
15.12. India
15.13. Japan
15.14. Australia
15.15. South Korea
16. Competitive Landscape
16.1. Market Share Analysis, 2024
16.2. FPNV Positioning Matrix, 2024
16.3. Competitive Analysis
16.3.1. Samsung Electronics Co., Ltd.
16.3.2. SK hynix Inc.
16.3.3. Micron Technology, Inc.
16.3.4. Kioxia Corporation
16.3.5. Western Digital Corporation
16.3.6. Intel Corporation
16.3.7. Everspin Technologies, Inc.
16.3.8. Infineon Technologies AG
16.3.9. STMicroelectronics N.V.
16.3.10. Macronix International Co., Ltd.
List of Tables
List of Figures

Samples

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Companies Mentioned

The key companies profiled in this Next Generation Non-Volatile Memory market report include:
  • Samsung Electronics Co., Ltd.
  • SK hynix Inc.
  • Micron Technology, Inc.
  • Kioxia Corporation
  • Western Digital Corporation
  • Intel Corporation
  • Everspin Technologies, Inc.
  • Infineon Technologies AG
  • STMicroelectronics N.V.
  • Macronix International Co., Ltd.

Table Information