Automotive Power Discrete Market Report 2026

The automotive power discrete market size has grown steadily in recent years. It will grow from $4.84 billion in 2025 to $5.06 billion in 2026 at a compound annual growth rate (CAGR) of 4.5%. The growth in the historic period can be attributed to growing demand for efficient vehicle power electronics, early adoption of silicon based power devices, rising integration of electronic control units, evolution of automotive safety and comfort systems, expansion of hybrid vehicle production.

The automotive power discrete market size is expected to see strong growth in the next few years. It will grow to $6.3 billion in 2030 at a compound annual growth rate (CAGR) of 5.7%. The growth in the forecast period can be attributed to increasing penetration of ev and hev platforms, rapid transition to gan and sic technologies, rising demand for high power density applications, growing focus on thermal efficiency and durability, expansion of autonomous and connected vehicle systems. Major trends in the forecast period include rising adoption of wide bandgap power devices, increasing shift toward high efficiency automotive power systems, growing demand for robust power management in ev architectures, expansion of advanced power conversion platforms, enhanced focus on high temperature and high voltage operation.

The growing popularity of premium vehicles is expected to drive the growth of the automotive power discrete market in the coming years. Premium vehicles are a category of automobiles that provide a higher standard of quality, comfort, performance, and features compared to mainstream vehicles. These vehicles are known for their superior craftsmanship, advanced technology, high-quality materials, and meticulous attention to design and engineering. Power discrete components play a crucial role in premium vehicles, supporting advanced electronics, enhanced performance, luxury features, and compliance with regulatory standards. These components optimize power management, boost performance, and ensure regulatory adherence, elevating the overall quality of premium vehicles. For example, in January 2024, BMW Group, a Germany-based luxury vehicle manufacturer, reported a 10.3% increase in sales in the fourth quarter of 2023, reaching 718,778 units. As a result, the growing demand for premium vehicles is fueling the expansion of the automotive power discrete market.

Major companies in the automotive power discrete market are focusing on developing innovative solutions such as silicon-carbide (SiC) MOSFETs to enhance power conversion efficiency, thermal management, and compactness in electric vehicle systems. A silicon-carbide MOSFET uses SiC semiconductor material instead of traditional silicon, offering lower switching losses, higher breakdown voltage, and superior thermal conductivity, which enables smaller, lighter, and more efficient power modules for EV powertrains and chargers. For example, in April 2025, Infineon Technologies AG, a Germany-based semiconductor manufacturer, introduced the CoolSiC MOSFET 750 V G2 series designed for automotive applications. The product features ultra-low on-resistance, strong gate-voltage robustness, and top-side cooling for improved thermal performance, delivering significant efficiency gains for on-board chargers, DC-DC converters, and traction inverters in electric vehicles. The series is AEC-Q101 qualified, ensuring compliance with strict automotive reliability and durability standards. It also supports higher switching frequencies, allowing designers to minimize passive component sizes and achieve more compact, efficient EV power systems.

In January 2025, ON Semiconductor Corporation, a U.S.-based provider of intelligent power and sensing technologies for automotive, industrial, and infrastructure applications, acquired the Silicon Carbide (SiC) JFET technology portfolio of Qorvo, Inc., including its subsidiary UnitedSiC, Inc., for $115 million in cash. Through this acquisition, ON Semiconductor aims to strengthen its capabilities in high-voltage and high-efficiency power semiconductors, supporting its expansion into markets such as electric vehicles, industrial power, and AI data centers. Qorvo, Inc. is a U.S.-based provider of radio frequency (RF) and power management technologies serving the mobile, infrastructure, defense, and IoT sectors.

Major companies operating in the automotive power discrete market are Robert Bosch GmbH, Hitachi Ltd., Mitsubishi Electric Corporation, ABB Ltd., Toshiba Corporation, Texas Instruments Incorporated, Schaeffler Technologies AG & Co. KG, STMicroelectronics N.V., BorgWarner Inc., Infineon Technologies AG, NXP Semiconductors N.V., Renesas Electronics Corporation, Danfoss, Onsemi, Amkor Technology Inc., Microchip Technology Inc., Fuji Electric Co. Ltd., United Automotive Electronic Systems Co. Ltd., Rohm Semiconductor, Vishay Intertechnology Inc., Littelfuse Inc., Nexperia, Diodes Incorporated, Sanken Electric Co. Ltd., Shindengen Electric Manufacturing Co. Ltd., Alpha and Omega Semiconductor Inc., Wolfspeed Inc., Semikron, Transphorm Inc.

Note that the outlook for this market is being affected by rapid changes in trade relations and tariffs globally. The report will be updated prior to delivery to reflect the latest status, including revised forecasts and quantified impact analysis. The report’s Recommendations and Conclusions sections will be updated to give strategies for entities dealing with the fast-moving international environment.

Tariffs on semiconductor materials, wide bandgap components such as gan and sic, and automotive electronic assemblies have increased production costs for automotive power discrete manufacturers, particularly in regions relying on imports from Asia. These tariffs disrupt supply chains, slow component availability, and raise costs for passenger and commercial vehicle power systems. However, they also stimulate domestic fabrication, localized sourcing, and investment in regional semiconductor ecosystems, helping improve long term supply stability and reduce dependency on foreign suppliers.

The automotive power discrete market research report is one of a series of new reports that provides automotive power discrete market statistics, including automotive power discrete industry global market size, regional shares, competitors with a automotive power discrete market share, detailed automotive power discrete market segments, market trends and opportunities, and any further data you may need to thrive in the automotive power discrete industry. This automotive power discrete market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.

Automotive power discrete refers to a specific type of electronic component explicitly designed for application in automotive settings to control and oversee electrical power. These components are employed in power converters to transform DC power sourced from the battery into the varied voltages and currents necessary for the vehicle's electrical systems. They are engineered to manage high power levels and exhibit reliable operation in challenging automotive environments.

The primary products encompassed within automotive power discrete include gallium nitride (GaN) and silicon carbide (SiC). Gallium nitride is a crystalline compound comprising gallium (Ga) and nitrogen (N) atoms arranged in a hexagonal crystal lattice structure. The devices consist of power integrated circuits (IC) and power modules or discrete components, incorporating a microcontroller and sensor. These find application in various vehicle types, including passenger vehicles, light commercial vehicles, and heavy commercial vehicles.North America was the largest region in the automotive power discrete market in 2025. The regions covered in the automotive power discrete market report are Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, Middle East, Africa. The countries covered in the automotive power discrete market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Taiwan, Russia, South Korea, UK, USA, Canada, Italy, Spain.

The automotive power discrete market consists of sales of insulated gate bipolar transistor (IGBT) modules, voltage regulators, onboard chargers, voltage suppressors, and current sensors. Values in this market are ‘factory gate’ values, that is, the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors, and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.

The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD unless otherwise specified).

The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.

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