Gallium Nitride Semiconductor Devices Market Report 2026

The gallium nitride semiconductor devices market size has grown rapidly in recent years. It will grow from $12.05 billion in 2025 to $13.95 billion in 2026 at a compound annual growth rate (CAGR) of 15.8%. The growth in the historic period can be attributed to early development of gan hemts for rf applications, growth in telecom infrastructure deployments, increasing demand for power efficient semiconductor devices, rising adoption of advanced materials in consumer electronics, expansion of aerospace and defense electronics.

The gallium nitride semiconductor devices market size is expected to see rapid growth in the next few years. It will grow to $24.53 billion in 2030 at a compound annual growth rate (CAGR) of 15.2%. The growth in the forecast period can be attributed to rising penetration of electric and hybrid vehicles, increasing deployment of 5g and future 6g networks, growth of fast charging ecosystems globally, expanding renewable energy power conversion needs, rising demand for compact high power density devices. Major trends in the forecast period include rising shift from silicon to wide bandgap materials, increasing adoption of gan devices in fast charging systems, growing demand for high frequency rf components, expansion of gan based power electronics in automotive applications, rising integration of compact high efficiency power modules.

The growing demand for consumer electronics is expected to drive the expansion of the gallium nitride semiconductor devices market in the coming years. Consumer electronics are devices intended for everyday use, including smartphones, laptops, tablets, gaming consoles, and wearable technology. This demand is rising due to rapid urbanization, as densely populated urban areas see higher adoption of advanced technologies and greater access to retail channels that facilitate consumer electronics purchases. The increasing need for consumer electronics, in turn, fuels demand for gallium nitride semiconductor devices, which enable faster charging, improved power efficiency, and enhanced performance in compact electronic products. For example, in May 2023, according to the Japan Electronics and Information Technology Industries Association, a Japan-based trade association, total consumer electronic equipment production in Japan reached $209.16 million (¥32,099 million), up from $164.65 million (¥25,268 million) in May 2022. Consequently, the rising demand for consumer electronics is propelling growth in the gallium nitride semiconductor devices market.

Major companies in the gallium nitride (GaN) semiconductor devices market are increasingly focused on developing innovative fourth-generation GaN technology to improve energy efficiency, enhance power density, support higher switching frequencies, and boost thermal performance. Fourth-generation GaN technology represents the latest advancements in GaN semiconductor materials and devices, enhancing performance, efficiency, and scalability for various applications. For example, in September 2023, Navitas Semiconductor, a U.S.-based company specializing in GaN semiconductors and power electronics, launched its fourth-generation GaN technology known as the GaNSafe platform. This platform targets high-power applications in data centers, solar energy storage, and electric vehicles, and is expected to enhance the performance of EVs and other applications by delivering more efficient and reliable power solutions under demanding conditions.

In October 2023, Infineon Technologies AG, a Germany-based provider of semiconductor and system solutions, acquired GaN Systems Inc. for an undisclosed sum. Through this acquisition, Infineon aims to enhance its Gallium Nitride (GaN) semiconductor portfolio, reinforce its global leadership in power semiconductor systems, and expand its market share in GaN semiconductor devices. GaN Systems Inc. is a Canada-based manufacturer of gallium nitride (GaN) semiconductor devices.

Major companies operating in the gallium nitride semiconductor devices market are Texas Instruments Incorporated, Toshiba Corporation, Infineon Technologies AG, Fujitsu Limited, NXP Semiconductors N.V., ams-OSRAM AG, Wolfspeed Inc., Qorvo Inc., Panasonic Holdings Corporation, NTT Advanced Technology Corporation, Enkris Semiconductor Inc., Sanan Integrated Circuit, Navitas Semiconductor, Cypress Semiconductor Corporation, Renesas Electronics Corporation, STMicroelectronics N.V., Exagan, GaN Systems Inc., UnitySC, Dialog Semiconductor Plc, Cree Inc., Efficient Power Conversion Corporation (EPC)

Note that the outlook for this market is being affected by rapid changes in trade relations and tariffs globally. The report will be updated prior to delivery to reflect the latest status, including revised forecasts and quantified impact analysis. The report’s Recommendations and Conclusions sections will be updated to give strategies for entities dealing with the fast-moving international environment.

Tariffs are influencing the gallium nitride semiconductor devices market by increasing the cost of imported wafers, substrates and fabrication equipment which raises production expenses for power, rf and opto semiconductor devices. Regions dependent on Asian manufacturing hubs, particularly North America and Europe, experience higher component pricing and delayed supply cycles across consumer electronics, automotive power modules and telecom infrastructure. Tariff pressures slow adoption in cost sensitive applications yet encourage domestic semiconductor fabrication, stimulate reshoring initiatives and accelerate innovation in high efficiency gan device manufacturing to reduce reliance on imported materials.

The gallium nitride semiconductor devices market research report is one of a series of new reports that provides gallium nitride semiconductor devices market statistics, including gallium nitride semiconductor devices industry global market size, regional shares, competitors with a gallium nitride semiconductor devices market share, detailed gallium nitride semiconductor devices market segments, market trends and opportunities, and any further data you may need to thrive in the gallium nitride semiconductor devices industry. This gallium nitride semiconductor devices market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.

Gallium nitride semiconductor devices involve the manufacturing of electronic components such as transistors and diodes, utilizing gallium nitride material for energy-to-power conversion. These devices possess dynamic electric and chemical properties, making them suitable for the development of robust, mechanically stable, high-voltage, and high-frequency electronic power devices. Gallium nitride semiconductors are gaining prominence as a substitute for silicon-based semiconductors, addressing the increasing demands for enhanced power system efficiency, performance, and cost-effectiveness.

The primary components of gallium nitride semiconductor devices include capacitors, diodes, rectifiers, and power integrated circuits (ICs). Transistors, which are essential for amplification, switching, or signal modulation, serve as fundamental building blocks in modern electronic circuits and play diverse roles in electronic devices. Various device types associated with gallium nitride semiconductors include opto-semiconductors, power semiconductors, and RF (radiofrequency) semiconductors. These semiconductors come in different wafer sizes, including 2 inches, 4 inches, 6 inches, and 8 inches, and find applications in automotive, consumer electronics, defense and aerospace, healthcare, industrial and power, information and communication technology, among other sectors.North America was the largest region in the gallium nitride semiconductor device market in 2025. Asia-Pacific is expected to be the fastest-growing region in the forecast period. The regions covered in the gallium nitride semiconductor devices market report are Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, Middle East, Africa. The countries covered in the gallium nitride semiconductor devices market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Taiwan, Russia, South Korea, UK, USA, Canada, Italy, Spain.

The gallium nitride semiconductor market consists of sales of LEDs, solar cells, photodiodes, and lasers. Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.

The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD unless otherwise specified).

The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.

This product will be delivered within 1-3 business days.