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LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market Size, Share & Trends Analysis Report By Power Rating (High Power, Medium Power and Low Power), By Type (IGBT Module and Discrete IGBT), By Application, By Country and Growth Forecast, 2023 - 2030

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    Report

  • 159 Pages
  • February 2024
  • Region: Africa, Middle East
  • Marqual IT Solutions Pvt. Ltd (KBV Research)
  • ID: 5945690
The Latin America, Middle East and Africa Insulated-Gate Bipolar Transistors (IGBTs) Market would witness market growth of 8.3% CAGR during the forecast period (2023-2030). In the year 2026, the LAMEA market's volume is expected to surge to 7864.5 thousand units, showcasing a growth of 16.2% (2023-2030).

IGBTs with integrated smart features, including advanced control algorithms and diagnostics, are also gaining prominence. These features enhance the functionality of IGBT-based systems, offering better performance, reliability, and real-time monitoring capabilities. The integration of IGBTs in the context of industry 4.0 and digitalization is an emerging trend. Smart manufacturing environments, driven by industry 4.0 principles, leverage IGBTs for precise control, automation, and connectivity in industrial processes.

The rising adoption of renewable energy systems, including solar and wind power applications, is driving the use of IGBTs. Additionally, IGBTs play a crucial role in inverters for solar panels and converters for wind turbines, contributing to the growth of the clean energy sector. Advanced thermal management solutions are becoming essential with the trend towards higher power densities. The market is witnessing innovations in cooling technologies, heat sinks, and thermal interface materials to address the thermal challenges associated with high-power IGBT applications.

The rise of connected devices and 5G in Brazil is increasing the demand for IGBTs. As per the ITA, the edge computing sector in Brazil experienced a 16% increase per year between 2019 and 2023. The growth was primarily a result of the advancement of 5G in Brazil. Furthermore, Brazil's total number of connected devices could reach 27.1 billion by 2025. Therefore, expanding the region's renewable energy and telecommunication sector is propelling the market's growth.

The Brazil market dominated the LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $246.4 million by 2030. The Argentina market is registering a CAGR of 8.9% during (2023 - 2030). Additionally, The UAE market would showcase a CAGR of 7.9% during (2023 - 2030).

Based on Power Rating, the market is segmented into High Power, Medium Power and Low Power. Based on Type, the market is segmented into IGBT Module and Discrete IGBT. Based on Application, the market is segmented into Energy & Power, Inverter & UPS, Electric Vehicle, Industrial System, Consumer Electronics and Others. Based on countries, the market is segmented into Brazil, Argentina, UAE, Saudi Arabia, South Africa, Nigeria, and Rest of LAMEA.

List of Key Companies Profiled

  • Infineon Technologies AG
  • Toshiba Corporation
  • STMicroelectronics N.V.
  • NXP Semiconductors N.V.
  • ABB Group
  • Fuji Electric Co. Ltd.
  • Mitsubishi Electric Corporation
  • Renesas Electronics Corporation
  • Rohm Co., Ltd.
  • Vishay Intertechnology, Inc.

Market Report Segmentation

By Power Rating (Volume, Thousand Units, USD Billion, 2019-2030)
  • High Power
  • Medium Power
  • Low Power
By Type (Volume, Thousand Units, USD Billion, 2019-2030)
  • IGBT Module
  • Discrete IGBT
By Application (Volume, Thousand Units, USD Billion, 2019-2030)
  • Energy & Power
  • Inverter & UPS
  • Electric Vehicle
  • Industrial System
  • Consumer Electronics
  • Others
By Country (Volume, Thousand Units, USD Billion, 2019-2030)
  • Brazil
  • Argentina
  • UAE
  • Saudi Arabia
  • South Africa
  • Nigeria
  • Rest of LAMEA

Table of Contents

Chapter 1. Market Scope & Methodology
1.1 Market Definition
1.2 Objectives
1.3 Market Scope
1.4 Segmentation
1.4.1 LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, by Power Rating
1.4.2 LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, by Type
1.4.3 LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, by Application
1.4.4 LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, by Country
1.5 Methodology for the research
Chapter 2. Market at a Glance
2.1 Key Highlights
Chapter 3. Market Overview
3.1 Introduction
3.1.1 Overview
3.1.1.1 Market Composition and Scenario
3.2 Key Factors Impacting the Market
3.2.1 Market Drivers
3.2.2 Market Restraints
3.2.3 Market Opportunities
3.2.4 Market Challenges
3.3 Porter Five Forces Analysis
Chapter 4. LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
4.1 LAMEA High Power Market, By Country
4.2 LAMEA Medium Power Market, By Country
4.3 LAMEA Low Power Market, By Country
Chapter 5. LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
5.1 LAMEA IGBT Module Market, By Country
5.2 LAMEA Discrete IGBT Market, By Country
Chapter 6. LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
6.1 LAMEA Energy & Power Market, By Country
6.2 LAMEA Inverter & UPS Market, By Country
6.3 LAMEA Electric Vehicle Market, By Country
6.4 LAMEA Industrial System Market, By Country
6.5 LAMEA Consumer Electronics Market, By Country
6.6 LAMEA Others Market, By Country
Chapter 7. LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Country
7.1 Brazil Insulated-Gate Bipolar Transistors (IGBTs) Market
7.1.1 Brazil Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.1.2 Brazil Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.1.3 Brazil Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.2 Argentina Insulated-Gate Bipolar Transistors (IGBTs) Market
7.2.1 Argentina Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.2.2 Argentina Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.2.3 Argentina Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.3 UAE Insulated-Gate Bipolar Transistors (IGBTs) Market
7.3.1 UAE Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.3.2 UAE Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.3.3 UAE Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.4 Saudi Arabia Insulated-Gate Bipolar Transistors (IGBTs) Market
7.4.1 Saudi Arabia Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.4.2 Saudi Arabia Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.4.3 Saudi Arabia Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.5 South Africa Insulated-Gate Bipolar Transistors (IGBTs) Market
7.5.1 South Africa Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.5.2 South Africa Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.5.3 South Africa Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.6 Nigeria Insulated-Gate Bipolar Transistors (IGBTs) Market
7.6.1 Nigeria Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.6.2 Nigeria Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.6.3 Nigeria Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.7 Rest of LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market
7.7.1 Rest of LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.7.2 Rest of LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.7.3 Rest of LAMEA Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
Chapter 8. Company Profiles
8.1 Infineon Technologies AG
8.1.1 Company Overview
8.1.2 Financial Analysis
8.1.3 Segmental and Regional Analysis
8.1.4 Research & Development Expense
8.1.5 Recent strategies and developments:
8.1.5.1 Acquisition and Mergers:
8.1.6 SWOT Analysis
8.2 Toshiba Corporation
8.2.1 Company Overview
8.2.2 Financial Analysis
8.2.3 Segmental and Regional Analysis
8.2.4 Research and Development Expense
8.2.5 Recent strategies and developments:
8.2.5.1 Product Launches and Product Expansions:
8.2.6 SWOT Analysis
8.3 STMicroelectronics N.V.
8.3.1 Company Overview
8.3.2 Financial Analysis
8.3.3 Segmental and Regional Analysis
8.3.4 Research & Development Expense
8.3.5 SWOT Analysis
8.4 NXP Semiconductors N.V.
8.4.1 Company Overview
8.4.2 Financial Analysis
8.4.3 Regional Analysis
8.4.4 Research & Development Expense
8.4.5 SWOT Analysis
8.5 ABB Group
8.5.1 Company Overview
8.5.2 Financial Analysis
8.5.3 Segmental and Regional Analysis
8.5.4 Research & Development Expense
8.5.5 SWOT Analysis
8.6 Fuji Electric Co. Ltd.
8.6.1 Company Overview
8.6.2 Financial Analysis
8.6.3 Segmental and Regional Analysis
8.6.4 Research & Development Expense
8.6.5 SWOT Analysis
8.7 Mitsubishi Electric Corporation
8.7.1 Company Overview
8.7.2 Financial Analysis
8.7.3 Segmental and Regional Analysis
8.7.4 Research & Development Expense
8.7.5 SWOT Analysis
8.8 Renesas Electronics Corporation
8.8.1 Company Overview
8.8.2 Financial Analysis
8.8.3 Segmental and Regional Analysis
8.8.4 Research & Development Expense
8.8.5 Recent strategies and developments:
8.8.5.1 Product Launches and Product Expansions:
8.8.6 SWOT Analysis
8.9 Rohm Co., Ltd.
8.9.1 Company Overview
8.9.2 Financial Analysis
8.9.3 Segmental and Regional Analysis
8.9.4 Research & Development Expense
8.9.5 SWOT Analysis
8.10. Vishay Intertechnology, Inc.
8.10.1 Company Overview
8.10.2 Financial Analysis
8.10.3 Segmental and Regional Analysis
8.10.4 Research and Development Expense
8.10.5 SWOT Analysis

Companies Mentioned

  • Infineon Technologies AG
  • Toshiba Corporation
  • STMicroelectronics N.V.
  • NXP Semiconductors N.V.
  • ABB Group
  • Fuji Electric Co. Ltd.
  • Mitsubishi Electric Corporation
  • Renesas Electronics Corporation
  • Rohm Co., Ltd.
  • Vishay Intertechnology, Inc.

Methodology

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