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Europe Insulated-Gate Bipolar Transistors (IGBTs) Market Size, Share & Trends Analysis Report By Power Rating (High Power, Medium Power and Low Power), By Type (IGBT Module and Discrete IGBT), By Application, By Country and Growth Forecast, 2023 - 2030

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    Report

  • 159 Pages
  • February 2024
  • Region: Europe
  • Marqual IT Solutions Pvt. Ltd (KBV Research)
  • ID: 5945800
The Europe Insulated-Gate Bipolar Transistors (IGBTs) Market would witness market growth of 6.1% CAGR during the forecast period (2023-2030). In the year 2020, the Europe market's volume surged to 6562.4 thousand units, showcasing a growth of 22.7% (2019-2022).

The insulated-gate bipolar transistors (IGBTs) market refers to the industry and marketplace related to the manufacturing, distribution, and utilization of insulated-gate bipolar transistors, semiconductor devices widely employed in power electronics applications. IGBTs combine the characteristics of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), making them suitable for high-power applications such as motor drives, inverters, power supplies, and various electronic systems.

Furthermore, IGBTs offer exceptional power-handling capabilities, making them indispensable in various high-power applications. Their ability to switch large currents at high voltages and controllable switching characteristics position them as a cornerstone of power electronics. IGBTs find widespread applications in diverse industries, including motor drives, inverters, power supplies, and industrial automation. Their adaptability extends to emerging fields such as renewable energy systems, electric vehicles, and smart grids.

As per the ITA, Portugal experienced a notable upswing in the sale of electric vehicles (EVs) in January 2023, totaling 2405 units. This figure includes plug-in hybrid vehicles as well as entirely electric vehicles. The EV sales experienced a substantial surge of 69.3%, resulting in a noteworthy market share of 15.4%. The surge in demand for EVs in Europe necessitates a parallel rise in the need for advanced power modules, crucial components for managing electrical power in electric vehicles. Therefore, the rising production of EVs in the region is driving the growth of the market.

The Germany market dominated the Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $704.4 million by 2030. The UK market is experiencing a CAGR of 5.1% during (2023 - 2030). Additionally, The France market would exhibit a CAGR of 6.9% during (2023 - 2030).

Based on Power Rating, the market is segmented into High Power, Medium Power and Low Power. Based on Type, the market is segmented into IGBT Module and Discrete IGBT. Based on Application, the market is segmented into Energy & Power, Inverter & UPS, Electric Vehicle, Industrial System, Consumer Electronics and Others. Based on countries, the market is segmented into Germany, UK, France, Russia, Spain, Italy, and Rest of Europe.

List of Key Companies Profiled

  • Infineon Technologies AG
  • Toshiba Corporation
  • STMicroelectronics N.V.
  • NXP Semiconductors N.V.
  • ABB Group
  • Fuji Electric Co. Ltd.
  • Mitsubishi Electric Corporation
  • Renesas Electronics Corporation
  • Rohm Co., Ltd.
  • Vishay Intertechnology, Inc.

Market Report Segmentation

By Power Rating (Volume, Thousand Units, USD Billion, 2019-2030)
  • High Power
  • Medium Power
  • Low Power
By Type (Volume, Thousand Units, USD Billion, 2019-2030)
  • IGBT Module
  • Discrete IGBT
By Application (Volume, Thousand Units, USD Billion, 2019-2030)
  • Energy & Power
  • Inverter & UPS
  • Electric Vehicle
  • Industrial System
  • Consumer Electronics
  • Others
By Country (Volume, Thousand Units, USD Billion, 2019-2030)
  • Germany
  • UK
  • France
  • Russia
  • Spain
  • Italy
  • Rest of Europe

Table of Contents

Chapter 1. Market Scope & Methodology
1.1 Market Definition
1.2 Objectives
1.3 Market Scope
1.4 Segmentation
1.4.1 Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, by Power Rating
1.4.2 Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, by Type
1.4.3 Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, by Application
1.4.4 Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, by Country
1.5 Methodology for the research
Chapter 2. Market at a Glance
2.1 Key Highlights
Chapter 3. Market Overview
3.1 Introduction
3.1.1 Overview
3.1.1.1 Market Composition and Scenario
3.2 Key Factors Impacting the Market
3.2.1 Market Drivers
3.2.2 Market Restraints
3.2.3 Market Opportunities
3.2.4 Market Challenges
3.3 Porter Five Forces Analysis
Chapter 4. Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
4.1 Europe High Power Market, By Country
4.2 Europe Medium Power Market, By Country
4.3 Europe Low Power Market, By Country
Chapter 5. Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
5.1 Europe IGBT Module Market, By Country
5.2 Europe Discrete IGBT Market, By Country
Chapter 6. Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
6.1 Europe Energy & Power Market, By Country
6.2 Europe Inverter & UPS Market, By Country
6.3 Europe Electric Vehicle Market, By Country
6.4 Europe Industrial System Market, By Country
6.5 Europe Consumer Electronics Market, By Country
6.6 Europe Others Market, By Country
Chapter 7. Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Country
7.1 Germany Insulated-Gate Bipolar Transistors (IGBTs) Market
7.1.1 Germany Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.1.2 Germany Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.1.3 Germany Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.2 UK Insulated-Gate Bipolar Transistors (IGBTs) Market
7.2.1 UK Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.2.2 UK Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.2.3 UK Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.3 France Insulated-Gate Bipolar Transistors (IGBTs) Market
7.3.1 France Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.3.2 France Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.3.3 France Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.4 Russia Insulated-Gate Bipolar Transistors (IGBTs) Market
7.4.1 Russia Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.4.2 Russia Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.4.3 Russia Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.5 Spain Insulated-Gate Bipolar Transistors (IGBTs) Market
7.5.1 Spain Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.5.2 Spain Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.5.3 Spain Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.6 Italy Insulated-Gate Bipolar Transistors (IGBTs) Market
7.6.1 Italy Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.6.2 Italy Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.6.3 Italy Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
7.7 Rest of Europe Insulated-Gate Bipolar Transistors (IGBTs) Market
7.7.1 Rest of Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating
7.7.2 Rest of Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type
7.7.3 Rest of Europe Insulated-Gate Bipolar Transistors (IGBTs) Market, By Application
Chapter 8. Company Profiles
8.1 Infineon Technologies AG
8.1.1 Company Overview
8.1.2 Financial Analysis
8.1.3 Segmental and Regional Analysis
8.1.4 Research & Development Expense
8.1.5 Recent strategies and developments:
8.1.5.1 Acquisition and Mergers:
8.1.6 SWOT Analysis
8.2 Toshiba Corporation
8.2.1 Company Overview
8.2.2 Financial Analysis
8.2.3 Segmental and Regional Analysis
8.2.4 Research and Development Expense
8.2.5 Recent strategies and developments:
8.2.5.1 Product Launches and Product Expansions:
8.2.6 SWOT Analysis
8.3 STMicroelectronics N.V.
8.3.1 Company Overview
8.3.2 Financial Analysis
8.3.3 Segmental and Regional Analysis
8.3.4 Research & Development Expense
8.3.5 SWOT Analysis
8.4 NXP Semiconductors N.V.
8.4.1 Company Overview
8.4.2 Financial Analysis
8.4.3 Regional Analysis
8.4.4 Research & Development Expense
8.4.5 SWOT Analysis
8.5 ABB Group
8.5.1 Company Overview
8.5.2 Financial Analysis
8.5.3 Segmental and Regional Analysis
8.5.4 Research & Development Expense
8.5.5 SWOT Analysis
8.6 Fuji Electric Co. Ltd.
8.6.1 Company Overview
8.6.2 Financial Analysis
8.6.3 Segmental and Regional Analysis
8.6.4 Research & Development Expense
8.6.5 SWOT Analysis
8.7 Mitsubishi Electric Corporation
8.7.1 Company Overview
8.7.2 Financial Analysis
8.7.3 Segmental and Regional Analysis
8.7.4 Research & Development Expense
8.7.5 SWOT Analysis
8.8 Renesas Electronics Corporation
8.8.1 Company Overview
8.8.2 Financial Analysis
8.8.3 Segmental and Regional Analysis
8.8.4 Research & Development Expense
8.8.5 Recent strategies and developments:
8.8.5.1 Product Launches and Product Expansions:
8.8.6 SWOT Analysis
8.9 Rohm Co., Ltd.
8.9.1 Company Overview
8.9.2 Financial Analysis
8.9.3 Segmental and Regional Analysis
8.9.4 Research & Development Expense
8.9.5 SWOT Analysis
8.10. Vishay Intertechnology, Inc.
8.10.1 Company Overview
8.10.2 Financial Analysis
8.10.3 Segmental and Regional Analysis
8.10.4 Research and Development Expense
8.10.5 SWOT Analysis

Companies Mentioned

  • Infineon Technologies AG
  • Toshiba Corporation
  • STMicroelectronics N.V.
  • NXP Semiconductors N.V.
  • ABB Group
  • Fuji Electric Co. Ltd.
  • Mitsubishi Electric Corporation
  • Renesas Electronics Corporation
  • Rohm Co., Ltd.
  • Vishay Intertechnology, Inc.

Methodology

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