SiC Bare Die Devices is the fastest growing segment, Asia-Pacific is the largest regional market
Speak directly to the analyst to clarify any post sales queries you may have.
10% Free customizationThis report comes with 10% free customization, enabling you to add data that meets your specific business needs.
Key Market Drivers
The expanding adoption of electric vehicles represents a pivotal driver for the global silicon carbide power semiconductor market. SiC devices deliver superior power efficiency and thermal management essential for high-voltage systems in modern electric vehicles, facilitating extended driving ranges, faster charging, and reduced system size and weight for components like traction inverters and onboard chargers. This electrification directly correlates with the demand for robust power electronics. According to the International Energy Agency's "Global Electric Vehicle Outlook 2024", in April 2024, global electric vehicle sales were projected to reach approximately 17 million by the end of 2024, underscoring the substantial market for advanced semiconductor solutions.Key Market Challenges
The high manufacturing cost associated with Silicon Carbide (SiC) power semiconductors presents a significant impediment to the broader adoption and overall growth of the market. The production of SiC devices requires more capital-intensive processes compared to established silicon-based components, leading to higher unit costs for SiC power semiconductors. This elevated cost structure directly affects the pricing of end products, making SiC solutions less economically attractive for various applications where performance benefits do not sufficiently outweigh the increased initial investment.Key Market Trends
The transition to larger diameter SiC wafers represents a significant trend in the global SiC power semiconductor market, primarily driven by the imperative to enhance manufacturing efficiency and reduce per-die costs. Moving from 6-inch to 8-inch wafers allows for a greater number of chips to be produced from a single wafer, thereby increasing output and improving economies of scale.According to SEMI, in February 2024, 200mm fab capacity for power and automotive semiconductors is projected to increase by 34% between 2023 and 2026. This scaling is crucial for meeting the escalating demand for SiC devices across various high-power applications. As a testament to this trend, Infineon officially opened the first phase of its new 200mm, or 8-inch, SiC power semiconductor fab in Kulim, Malaysia, on August 8, 2024, with large-scale production anticipated by 2025. This expansion is designed to establish the facility as the world's largest and most competitive 200mm SiC power semiconductor fabrication plant.
Key Market Players Profiled:
- SMART Global Holdings, Inc.
- ROHM Co., Ltd.
- Infineon Technologies AG
- Semiconductor Components Industries, LLC
- STMicroelectronics International N.V.
- Microchip Technology Inc.
- Littelfuse, Inc.
- Texas instruments Incorporated
- NXP semiconductors N.V.
- Fuji Electric Co., Ltd.
Report Scope:
In this report, the Global SiC Power Semiconductor Market has been segmented into the following categories:By Devices:
- SiC Discrete Devices
- SiC Bare Die Devices
By Application:
- RF Devices & Cellular Base Station
- Power Supply & Inverter
- Power Grids
- EV Motor
- Industrial Motor Drives
- Railway Traction
- Others
By End-User:
- Telecommunication
- Energy & Power
- Automotive
- Industrial
- Electronics
- Others
By Region:
- North America
- Europe
- Asia-Pacific
- South America
- Middle East & Africa
Competitive Landscape
Company Profiles: Detailed analysis of the major companies present in the Global SiC Power Semiconductor Market.Available Customizations:
With the given market data, the publisher offers customizations according to a company's specific needs. The following customization options are available for the report.Company Information
- Detailed analysis and profiling of additional market players (up to five).
This product will be delivered within 1-3 business days.
Table of Contents
Companies Mentioned
The companies profiled in this SiC Power Semiconductor market report include:- SMART Global Holdings, Inc.
- ROHM Co., Ltd.
- Infineon Technologies AG
- Semiconductor Components Industries, LLC
- STMicroelectronics International N.V.
- Microchip Technology Inc.
- Littelfuse, Inc.
- Texas instruments Incorporated
- NXP semiconductors N.V.
- Fuji Electric Co., Ltd.
Table Information
| Report Attribute | Details |
|---|---|
| No. of Pages | 181 |
| Published | November 2025 |
| Forecast Period | 2024 - 2030 |
| Estimated Market Value ( USD | $ 3.64 Billion |
| Forecasted Market Value ( USD | $ 17.93 Billion |
| Compound Annual Growth Rate | 30.4% |
| Regions Covered | Global |
| No. of Companies Mentioned | 11 |
