Recent Developments in the Field of IR Detectors, Volume 118 in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters, including Type-II superlattice unipolar barrier infrared detectors, Fabrication and characterization of Ga-free T2SL structure for high performance infrared photodetector, Extracting Material and Structural Properties from Conventional Test Data of III-V Superlattice Detectors, Antimony-based Type-II superlattice infrared detectors: Focal Plane Arrays, Near-room temperature InAsSb-based infrared photodetectors, and more.
Other sections cover Interband cascade infrared Photodetectors
and Engineering of Superlattice Based Avalanche Photodiodes.
Other sections cover Interband cascade infrared Photodetectors
and Engineering of Superlattice Based Avalanche Photodiodes.
Table of Contents
1. Type-II superlattice unipolar barrier infrared detectorsDavid Z Ting, Alexander Soibel and Sarath D Gunapala
2. Fabrication and characterization of Ga-free T2SL structure for high performance infrared photodetector
Jean-Philippe Perez, Matthias Tornay and Philippe Christol
3. Extracting Material and Structural Properties from Conventional Test Data of III-V Superlattice Detectors
David R. Rhiger
4. Antimony-based Type-II superlattice infrared detectors: Focal Plane Arrays
Ruslan Ivanov, David Ramos, Marie Delmas and Linda H�glund
5. Near-room temperature InAsSb-based infrared photodetectors
Piotr Martyniuk and Antoni Rogalski
6. Interband cascade infrared Photodetectors
Rui Q. Yang and Michael B. Santos
7. Engineering of Superlattice Based Avalanche Photodiodes
Sam Tempel, Seunghyun Lee, Hyemin Jung, Christoph Grein and Sanjay Krishna
