Relief is physically impossible in the near term. Samsung and SK hynix have committed a combined 800 trillion won ($518 billion) to new Korean fabs, Micron has raised planned US spending above $250 billion, and SK hynix is building a $4 billion HBM packaging facility in Indiana - but a new memory fab requires a minimum of three years to first output and five to seven to reach full capacity. Because every producer is expanding against the same signal, the resulting supply lands within a single window, and the market corrects sharply from 2029 to a trough in 2030 before resuming bit-led growth.
Demand itself does not contract in any year. AI inference has installed a permanent floor: test-time scaling, long-context reasoning and agentic workloads have restructured the memory hierarchy downward, pushing data out of GPU memory into CPU RAM and into an entirely new SSD context tier. Meanwhile, embedded flash's inability to scale below 28nm makes the migration to MRAM, ReRAM and ferroelectric memory a matter of timing rather than choice. Memory has ceased to be a commodity input and become strategic infrastructure - priced, contracted and allocated accordingly.
The Global Memory and Storage Technology Market 2027-2037 is a comprehensive analysis of the global memory and storage industry through a full cycle - the AI-driven supercycle of 2026-2028, the capacity-led correction of 2029-2030, and the bit-led recovery that follows. The report combines rebased revenue forecasts anchored to reported 2026 producer results with detailed technology roadmaps, manufacturing capacity analysis, pricing models and 173 company profiles.
Forecasts are provided annually from 2026 to 2037 across every technology, application and region, with revenue decomposed into bit growth and average selling price so that cyclical and structural drivers can be separated. The report includes upside, base and downside scenarios, a ten-point risk register, wafer-capacity and supply-demand balance modelling, node-migration yield and cost curves, and a full technology-readiness assessment for every emerging memory candidate.
Contents include:
- Market forecasts 2026-2037 across a full cycle: supercycle peak, correction, trough and bit-led recovery, with revenue decomposed into bit growth versus average selling price
- Segment forecasts by technology - conventional DRAM, HBM, NAND, HDD, SSD controllers, storage systems and emerging non-volatile memory
- Forecasts by application and region, covering data centre and AI infrastructure, mobile, PC/client, automotive, industrial, consumer and enterprise storage across eight regions
- Scenario analysis and risk register - upside, base and downside cases with a ten-point risk assessment
- DRAM technology roadmaps - node progression from 1a to 0d, the 6F2 to 4F2 transition, 3D DRAM integration pathways, capacitor-less and gain-cell designs
- HBM technology - HBM3E through HBM6, custom HBM, TSV stacking, hybrid bonding, thermal management and processor integration
- NAND Flash roadmaps - layer scaling beyond 300 and 1,000 layers, CMOS Bonded Array and Xtacking, TLC/QLC/PLC evolution, High-Bandwidth Flash
- AI inference memory architecture - KV cache offloading, the SSD POD context tier, agentic AI and the shift in CPU-to-GPU memory ratios
- Emerging memory technologies - MRAM (STT, SOT, VCMA), ReRAM, FeRAM and HfO2 ferroelectrics, PCM, NRAM, CeRAM, ULTRARAM and selector-only memory, with a technology-readiness matrix and displacement scenarios
- Advanced packaging and integration - TSV, hybrid bonding, chiplets, fan-out packaging, processing-in-memory and compute-in-memory
- Supply chain and manufacturing - global wafer capacity by technology and region, fab utilisation, supply-demand balance, next-generation fab requirements, node yield and cost curves
- Regional and geopolitical analysis - China's capacity build-out (CXMT, YMTC), export controls, the 2026 tariff landscape and supply chain regionalisation
- Pricing and economic models - DRAM and NAND price cycles, HBM premium pricing, manufacturing cost structure, gross margin cycle and technology cost roadmaps
- Sustainability - carbon and water footprint by technology, the HBM environmental premium, energy efficiency evolution and circular economy
- 173 company profiles plus long-term technology roadmaps to 2037, including quantum, DNA, photonic and neuromorphic memory
Table of Contents
Companies Mentioned (Partial List)
A selection of companies mentioned in this report includes, but is not limited to:
- 3D Plus
- 4DS Memory
- Adata Technology
- Advantest Corporation
- Ambiq Micro
- AMD
- Amkor Technology
- ANAFLASH
- AP Memory
- Apacer Technology
- Applied Materials
- ASE Group
- ASM International
- ASML Holding
- Atomera
- Avalanche Technology
- Axelera AI
- BeSang
- Besi
- Celestial AI
- Cerebras Systems
- CXMT
- Crocus Nanoelectronics
- Crossbar
- d-Matrix
- Dnotitia
- Dosilicon
- eMemory
- Etron Technology
- ESMT
- Everspin Technologies
- Expedera
- Ferroelectric Memory Company
- FERROSemi Technology
- Floadia Corporation
- Fudan Microelectronics
- Giantec Semiconductor
- GigaDevice Semiconductor
- GlobalFoundries
- GlobalWafers

