GaN-on-Si Diode Market Report: Trends, Forecast and Competitive Analysis to 2031

• Within the type category, N-type contact is expected to witness higher growth over the forecast period.
• Within the application category, 5G is expected to witness the highest growth.
• In terms of region, APAC is expected to witness the highest growth over the forecast period.

Emerging Trends in the GaN-on-Si Diode Market

• Higher Voltage and Power Capabilities: There's a clear trend towards developing GaN-on-Si diodes capable of handling increasingly higher voltages and power levels. This expansion enables their use in more demanding applications like EV inverters and high-power industrial power supplies, replacing traditional silicon devices.
• Enhanced Integration with ICs: Integrating GaN-on-Si diodes with control and driver circuitry on the same chip (GaN power ICs) is a growing trend. This leads to more compact, efficient, and reliable power management solutions with reduced parasitic inductances.
• Larger Wafer Sizes for Cost Reduction: The industry is moving towards larger diameter silicon wafers (e.g., 8-inch) for GaN epitaxy. This economy of scale reduces the cost per die, making GaN-on-Si diodes more competitive with silicon in a broader range of applications.
• Improved Thermal Management: Innovations in substrate bonding and heat dissipation techniques are crucial for high-power GaN-on-Si diodes. Enhanced thermal management ensures device reliability and performance, especially in demanding automotive and industrial environments.
• Focus on Specific Applications: Development is increasingly tailored towards specific applications like fast chargers, LiDAR systems, and RF power amplifiers. This specialization allows for the optimization of GaN-on-Si diode characteristics to meet the unique demands of each sector.

Recent Developments in the GaN-on-Si Diode Market

• Introduction of Industrial-Grade GaN with Integrated Schottky Diode: Infineon recently launched industrial GaN transistors with an integrated Schottky diode. This integration reduces dead-time losses, increases system efficiency, simplifies design, and lowers BOM costs, making GaN more attractive for industrial power systems.
• Advancements in 300mm GaN-on-Si Wafer Technology: Infineon also pioneered the development of 300mm power GaN-on-Si wafer technology. This breakthrough allows for more efficient chip production, potentially leading to cost parity with silicon over time and driving wider adoption.
• Development of Bidirectional GaN Switches: Fraunhofer IAF presented a 1200V bidirectional GaN switch with integrated free-wheeling diodes using GaN-on-insulator technology. This innovation simplifies power converter design for energy storage and electric drive systems, improving efficiency and compactness.
• Focus on Automotive-Grade GaN Devices: There is increasing emphasis on developing GaN-on-Si devices that meet the stringent reliability and performance requirements of the automotive industry, particularly for EV power electronics and LiDAR systems.
• Expansion of GaN Power IC Offerings: Several companies are expanding their portfolios of integrated GaN power ICs, which combine GaN power switches with control and protection features, leading to smaller, more efficient, and easier-to-use power solutions.

Strategic Growth Opportunities in the GaN-on-Si Diode Market

• Electric Vehicle Power Electronics: GaN-on-Si diodes offer higher efficiency and power density for EV on-board chargers, inverters, and DC-DC converters, leading to faster charging times, longer ranges, and more compact designs, driving their adoption in the burgeoning EV market.
• Fast Chargers for Consumer Electronics: The demand for smaller and more efficient fast chargers for smartphones, laptops, and other devices presents a substantial opportunity for GaN-on-Si diodes due to their high switching frequencies and reduced component size.
• Power Supplies for Data Centers and Telecom: GaN-on-Si diodes can improve efficiency and reduce the size of power supplies in data centers and telecom infrastructure, leading to lower energy consumption and higher power density in these critical applications.
• LiDAR Systems for Autonomous Vehicles: High-speed and efficient GaN-on-Si diodes are crucial for the performance and reliability of LiDAR systems in autonomous vehicles, enabling precise and long-range sensing capabilities.
• RF Power Amplifiers for 5G and Beyond: GaN-on-Si technology is well-suited for RF power amplifiers in 5G base stations and future wireless communication systems, offering higher power output and efficiency at high frequencies.

GaN-on-Si Diode Market Drivers and Challenges

The factors responsible for driving the GaN-on-Si diode market include:

• Superior Performance over Silicon: GaN-on-Si diodes offer higher efficiency, faster switching speeds, and better thermal conductivity compared to traditional silicon diodes, making them ideal for power-intensive and high-frequency applications.
• Cost-Effectiveness of Silicon Substrates: Utilizing silicon as a substrate provides a cost advantage over other wide-bandgap materials like SiC, making GaN-on-Si diodes more accessible for a broader range of applications.
• Increasing Demand for Energy Efficiency: Global trends towards energy conservation and stricter regulations on power consumption are driving the adoption of more efficient power devices like GaN-on-Si diodes.
• Miniaturization of Electronic Devices: The continuous push for smaller and lighter electronic devices necessitates the use of components with higher power density, a key strength of GaN-on-Si technology.
• Growth in Key End-Use Applications: The rapid expansion of markets like electric vehicles, 5G infrastructure, and consumer electronics creates a strong demand for high-performance GaN-on-Si power devices.

Challenges in the GaN-on-Si diode market are:

• Material Quality and Defect Density: Achieving high-quality GaN epitaxial layers on silicon with low defect densities remains a challenge that can impact device reliability and performance, especially for high-voltage applications.
• Thermal Management Issues: While GaN has better thermal conductivity than silicon, managing heat dissipation in high-power GaN-on-Si devices can still be complex and requires advanced packaging solutions.
• Cost Competitiveness in Certain Applications: Despite the use of silicon substrates, GaN-on-Si diodes can still be more expensive than silicon in some lower-power applications, limiting their immediate adoption in cost-sensitive markets.

List of GaN-on-Si Diode Companies

Some of the GaN-on-Si diode companies profiled in this report include:

• Siltronic
• GaN System
• Microchip Technology
• Texas Instruments
• Infineon
• MACOM
• STMicroelectronics
• Qorvo
• Ganhemt
• Shenzhen SlkorMicro

GaN-on-Si Diode Market by Segment

Type [Value from 2019 to 2031]:

• N-Type Contact
• P-Type Contact

Application [Value from 2019 to 2031]:

• Automobile
• 5G
• Others

Region [Value from 2019 to 2031]:

• North America
• Europe
• Asia Pacific
• The Rest of the World

Country-wise Outlook for the GaN-on-Si Diode Market

• United States: The US market is seeing increased adoption of GaN-on-Si diodes in sectors like electric vehicles, defense, and telecommunications. Companies are focusing on developing more robust and efficient GaN power ICs and rectifiers, driven by the demand for higher power density and energy efficiency in these applications.
• China: China is rapidly expanding its GaN-on-Si capabilities, with significant investments in manufacturing and R&D. The focus is on cost-effective GaN power devices for consumer electronics, automotive, and 5G infrastructure, aiming to reduce reliance on international suppliers and build a strong domestic supply chain.
• Germany: German developments emphasize high-reliability GaN-on-Si diodes for industrial and automotive applications. Research institutions are working on advanced device structures and integration techniques to enhance performance and meet the stringent quality standards of these sectors, including bidirectional switches for EVs.
• India: India's engagement in the GaN-on-Si market is growing, with academic institutions and startups focusing on developing GaN power devices for domestic needs. Initial efforts include R&D in GaN epitaxy on silicon and the fabrication of transistors and diodes for power conversion applications.
• Japan: Japan's focus on GaN-on-Si diodes includes advancements in substrate technology and device design for applications in power electronics and RF systems. There's a push towards larger wafer sizes and higher quality GaN films on silicon to improve cost-effectiveness and performance.

Features of this Global GaN-on-Si Diode Market Report

• Market Size Estimates: GaN-on-Si diode market size estimation in terms of value ($B).
• Trend and Forecast Analysis: Market trends (2019 to 2024) and forecast (2025 to 2031) by various segments and regions.
• Segmentation Analysis: GaN-on-Si diode market size by type, application, and region in terms of value ($B).
• Regional Analysis: GaN-on-Si diode market breakdown by North America, Europe, Asia Pacific, and Rest of the World.
• Growth Opportunities: Analysis of growth opportunities in different types, applications, and regions for the GaN-on-Si diode market.
• Strategic Analysis: This includes M&A, new product development, and the competitive landscape of the GaN-on-Si diode market.
• Analysis of competitive intensity of the industry based on Porter’s Five Forces model.

This report answers the following 11 key questions: