The static random access memory (sram) and read-only memory (rom) design intellectual property (ip) market size is expected to see strong growth in the next few years. It will grow to $2.37 billion in 2030 at a compound annual growth rate (CAGR) of 6.8%. The growth in the forecast period can be attributed to growing demand for advanced memory architectures, increasing need for process-portable memory IP, rising adoption of multi-voltage memory designs, growing demand for faster memory access performance, and increasing focus on memory IP interoperability. Major trends in the forecast period include increasing adoption of high-density SRAM and ROM IP cores, growing demand for silicon-verified memory IP blocks, rising preference for reusable memory circuit designs, increasing integration of configurable memory IP into SoCs and ICs, and growing emphasis on memory IP portability across semiconductor process technologies.
The expansion of 5G infrastructure is expected to propel the growth of the static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) market in the coming years. 5G infrastructure refers to the network of physical and digital components such as small cells, base stations, antennas, fiber optic systems, and core network equipment that enable the delivery of fifth-generation wireless communication services. The expansion of 5G infrastructure is driven by increasing demand for faster data speeds, as bandwidth-intensive applications such as video streaming, cloud computing, and real-time communication require high bandwidth and low latency. The expansion of 5G infrastructure is driving demand for advanced semiconductor devices, thereby increasing the need for high-performance, low-latency, and energy-efficient static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) to support next-generation network equipment, edge computing, and connected devices. For instance, in December 2023, according to a report published by the Office of Communications (Ofcom), a UK-based government office, the UK recorded over 18,500 5G deployments across approximately 81,000 sites, rising from around 12,000 deployments in 2022, reflecting a significant year-on-year increase. Therefore, the expansion of 5G infrastructure is driving the growth of the static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) market.
Major companies operating in the static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) market are focusing on establishing strategic partnerships to accelerate memory IP innovation, strengthen semiconductor design capabilities, and expand their market presence. Strategic partnerships refer to long-term collaborations between companies that combine expertise, technologies, and resources to accelerate innovation, broaden market reach, and achieve shared business objectives. For instance, in August 2024, M31 Technology Corporation, a Taiwan-based silicon intellectual property provider, collaborated with Tower Semiconductor, an Israel-based semiconductor foundry company, to develop advanced SRAM and ROM IP solutions for Tower Semiconductor's 65nm power management platform. The collaboration introduced silicon-validated Single Port SRAM, One Port SRAM, and ROM IP memory compilers featuring low-power analog FET integration and multiple Deep N-Well voltage options. These solutions are optimized for applications including Internet of Things (IoT), smart wearables, vehicle-to-everything (V2X), and artificial intelligence (AI), supporting advanced semiconductor designs across emerging technology applications.
In August 2025, Cadence Design Systems, Inc., a US-based software and electronic design automation (EDA) company, acquired Arm’s Artisan Foundation IP business for an undisclosed amount. Through this acquisition, Cadence aimed to broaden its semiconductor design IP portfolio by integrating Arm’s Artisan Foundation IP, including SRAM memory compiler technology and SoC design solutions, while accelerating the development of advanced chips. Arm Holdings plc is a UK-based semiconductor foundation IP company that provides standard cell libraries, embedded SRAM memory compilers, GPIO IP, memory interfaces, and other physical IP for ASIC and SoC development.
Major companies operating in the static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) market are Taiwan Semiconductor Manufacturing Company Limited, Samsung Electronics Co. Ltd., Intel Corporation, Synopsys Inc., Cadence Design Systems Inc., Renesas Electronics Corporation, GlobalFoundries Inc., United Microelectronics Corporation, Socionext Inc., Silvaco Group Inc., Tower Semiconductor Ltd., VeriSilicon Microelectronics (Shanghai) Co. Ltd., SiFive Inc., Faraday Technology Corporation, M31 Technology Corporation, Dolphin Semiconductor, Mobile Semiconductor Inc., DXCorr Hardware Inc., sureCore Limited, NSCore Inc., Arm Limited, Rambus Inc., eMemory Technology Inc.
Asia-Pacific was the dominant region in the static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) market in 2025. Asia-Pacific is expected to be the rapidly growing region in the forecast period. The regions covered in the static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) market report are Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
The countries covered in the static random access memory (SRAM) and read-only memory (ROM) design intellectual property (IP) market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Taiwan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
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Table of Contents
Executive Summary
Static Random Access Memory (SRAM) And Read-Only Memory (ROM) Design Intellectual Property (IP) Market Global Report 2026 provides strategists, marketers and senior management with the critical information they need to assess the market.This report focuses static random access memory (sram) and read-only memory (rom) design intellectual property (ip) market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.
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Description
Where is the largest and fastest growing market for static random access memory (sram) and read-only memory (rom) design intellectual property (ip)? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward, including technological disruption, regulatory shifts, and changing consumer preferences? The static random access memory (sram) and read-only memory (rom) design intellectual property (ip) market global report answers all these questions and many more.The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, total addressable market (TAM), market attractiveness score (MAS), competitive landscape, market shares, company scoring matrix, trends and strategies for this market. It traces the market’s historic and forecast market growth by geography.
- The market characteristics section of the report defines and explains the market. This section also examines key products and services offered in the market, evaluates brand-level differentiation, compares product features, and highlights major innovation and product development trends.
- The supply chain analysis section provides an overview of the entire value chain, including key raw materials, resources, and supplier analysis. It also provides a list competitor at each level of the supply chain.
- The updated trends and strategies section analyses the shape of the market as it evolves and highlights emerging technology trends such as digital transformation, automation, sustainability initiatives, and AI-driven innovation. It suggests how companies can leverage these advancements to strengthen their market position and achieve competitive differentiation.
- The regulatory and investment landscape section provides an overview of the key regulatory frameworks, regularity bodies, associations, and government policies influencing the market. It also examines major investment flows, incentives, and funding trends shaping industry growth and innovation.
- The market size section gives the market size ($b) covering both the historic growth of the market, and forecasting its development.
- The forecasts are made after considering the major factors currently impacting the market. These include the technological advancements such as AI and automation, Russia-Ukraine war, trade tariffs (government-imposed import/export duties), elevated inflation and interest rates.
- The total addressable market (TAM) analysis section defines and estimates the market potential compares it with the current market size, and provides strategic insights and growth opportunities based on this evaluation.
- The market attractiveness scoring section evaluates the market based on a quantitative scoring framework that considers growth potential, competitive dynamics, strategic fit, and risk profile. It also provides interpretive insights and strategic implications for decision-makers.
- Market segmentations break down the market into sub markets.
- The regional and country breakdowns section gives an analysis of the market in each geography and the size of the market by geography and compares their historic and forecast growth.
- Expanded geographical coverage includes Taiwan and Southeast Asia, reflecting recent supply chain realignments and manufacturing shifts in the region. This section analyzes how these markets are becoming increasingly important hubs in the global value chain.
- The competitive landscape chapter gives a description of the competitive nature of the market, market shares, and a description of the leading companies. Key financial deals which have shaped the market in recent years are identified.
- The company scoring matrix section evaluates and ranks leading companies based on a multi-parameter framework that includes market share or revenues, product innovation, and brand recognition.
Scope
Markets Covered:
1) By Product: Standard Static Random Access Memory; Embedded Static Random Access Memory; Asynchronous Static Random Access Memory; Synchronous Static Random Access Memory; Read Only Memory2) By Technology: Complementary Metal Oxide Semiconductor; Bipolar Complementary Metal Oxide Semiconductor; Silicon On Insulator; Fin Field Effect Transistor
3) By Application: Consumer Electronics; Automotive; Industrial; Telecommunications; Other Applications
4) By End User: Original Equipment Manufacturers; Semiconductor Companies; Other End Users
Subsegments:
1) By Standard Static Random Access Memory: Single Port; Dual Port; Low Power; High Speed; High Density2) By Embedded Static Random Access Memory: Single Port Embedded Memory; Dual Port Embedded Memory; Multi Port Embedded Memory; Low Leakage Embedded Memory; High Performance Embedded Memory
3) By Asynchronous Static Random Access Memory: Low Power Asynchronous Memory; High Speed Asynchronous Memory; Industrial Grade Asynchronous Memory; Automotive Grade Asynchronous Memory; Radiation Hardened Asynchronous Memory
4) By Synchronous Static Random Access Memory: Burst Synchronous Memory; Pipeline Synchronous Memory; Quad Data Rate Synchronous Memory; Low Power Synchronous Memory; High Performance Synchronous Memory
5) By Read Only Memory: Mask Programmable Read Only Memory; Programmable Read Only Memory; Erasable Programmable Read Only Memory; Electrically Erasable Programmable Read Only Memory; One Time Programmable Read Only Memory
Companies Mentioned: Taiwan Semiconductor Manufacturing Company Limited; Samsung Electronics Co. Ltd.; Intel Corporation; Synopsys Inc.; Cadence Design Systems Inc.; Renesas Electronics Corporation; GlobalFoundries Inc.; United Microelectronics Corporation; Socionext Inc.; Silvaco Group Inc.; Tower Semiconductor Ltd.; VeriSilicon Microelectronics (Shanghai) Co. Ltd.; SiFive Inc.; Faraday Technology Corporation; M31 Technology Corporation; Dolphin Semiconductor; Mobile Semiconductor Inc.; DXCorr Hardware Inc.; sureCore Limited; NSCore Inc.; Arm Limited; Rambus Inc.; eMemory Technology Inc.
Countries: Australia; Brazil; China; France; Germany; India; Indonesia; Japan; Taiwan; Russia; South Korea; UK; USA; Canada; Italy; Spain
Regions: Asia-Pacific; South East Asia; Western Europe; Eastern Europe; North America; South America; Middle East; Africa
Time Series: Five years historic and ten years forecast.
Data: Ratios of market size and growth to related markets, GDP proportions, expenditure per capita.
Data Segmentations: Country and regional historic and forecast data, market share of competitors, market segments.
Sourcing and Referencing: Data and analysis throughout the report is sourced using end notes.
Delivery Format: Word, PDF or Interactive Report + Excel Dashboard
Added Benefits
- Bi-Annual Data Update
- Customisation
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Companies Mentioned
- Taiwan Semiconductor Manufacturing Company Limited
- Samsung Electronics Co. Ltd.
- Intel Corporation
- Synopsys Inc.
- Cadence Design Systems Inc.
- Renesas Electronics Corporation
- GlobalFoundries Inc.
- United Microelectronics Corporation
- Socionext Inc.
- Silvaco Group Inc.
- Tower Semiconductor Ltd.
- VeriSilicon Microelectronics (Shanghai) Co. Ltd.
- SiFive Inc.
- Faraday Technology Corporation
- M31 Technology Corporation
- Dolphin Semiconductor
- Mobile Semiconductor Inc.
- DXCorr Hardware Inc.
- sureCore Limited
- NSCore Inc.
- Arm Limited
- Rambus Inc.
- eMemory Technology Inc.

