Silicon Carbide Semiconductor Device Market Report 2026

The silicon carbide semiconductor device market size has grown exponentially in recent years. It will grow from $2.41 billion in 2025 to $2.93 billion in 2026 at a compound annual growth rate (CAGR) of 21.4%. The growth in the historic period can be attributed to historical use of sic substrates in high-power applications, increasing deployment of sic diodes in industrial systems, early adoption of sic mosfets in automotive inverters, rising utilization of sic in aerospace power modules, evolution of sic-based detectors for sensing applications.

The silicon carbide semiconductor device market size is expected to see exponential growth in the next few years. It will grow to $6.16 billion in 2030 at a compound annual growth rate (CAGR) of 20.4%. The growth in the forecast period can be attributed to rising demand for electric vehicle powertrains, expansion of renewable power conversion systems, increasing need for high-temperature semiconductor performance, growth of 5g and high-frequency communication devices, rising adoption of wide-bandgap semiconductor technologies. Major trends in the forecast period include growth of electric mobility power devices, expansion of energy-efficient semiconductor manufacturing, integration of sic devices in autonomous platforms, development of high-performance power electronics, increasing adoption of smart manufacturing for sic components.

The rising demand for electric vehicles is expected to drive the growth of the silicon carbide semiconductor device market in the coming years. An electric vehicle is a motorized vehicle powered by electricity stored in a battery that can be charged externally. Silicon carbide semiconductor devices are advantageous in electric vehicle (EV) powertrains because they offer higher power densities and improved switching efficiency; therefore, increasing EV demand directly boosts the need for silicon carbide semiconductor devices. For example, in 2024, the International Energy Agency (IEA), a France-based autonomous intergovernmental organization, reported that electric car sales in 2023 were 3.5 million higher than in 2022, representing a 35% year-over-year increase. Additionally, under the Net Zero Emissions by 2050 Scenario, more than 300 million electric cars are projected to be on the road by 2030, accounting for 60% of all new car sales. Thus, the rising demand for electric vehicles is driving the silicon carbide semiconductor device market.

Major companies in the silicon carbide semiconductor devices market are developing new silicon carbide-based devices with reduced switching losses to strengthen their competitive advantage. Switching losses refer to the energy lost when a semiconductor device transitions between its conducting (on) and non-conducting (off) states. For instance, in August 2023, Toshiba Electronic Devices & Storage Corporation, a Japan-based electronics company, introduced its third-generation silicon carbide (SiC) MOSFETs with the TWxxxZxxxC series. Designed for industrial applications, these devices aim to reduce losses in servers, data centers, electric vehicle charging stations, photovoltaic inverters, and uninterruptible power supplies. The MOSFETs are housed in a TO-247-4L(X) package featuring a fourth pin that provides a Kelvin connection for the gate drive signal source terminal. This feature lowers parasitic inductance and improves high-speed switching performance. The series includes devices with 650V and 1200V VDSS ratings, supporting low-loss operation even at high frequencies, and can handle continuous drain currents up to 100A, marking a significant advancement in power electronics for industrial use.

In December 2024, onsemi, a U.S.-based provider of intelligent power and sensing semiconductor solutions, acquired the silicon carbide Junction Field-Effect Transistor (SiC JFET) technology business - including United Silicon Carbide - from Qorvo for $115 million. Through this acquisition, onsemi sought to strengthen its silicon carbide semiconductor device portfolio and expand into high-efficiency power applications for AI data centers, electric vehicles, and solid-state circuit breakers, enhancing both its technological capabilities and market position. Qorvo, Inc. is a U.S.-based provider of RF solutions and semiconductor technologies for advanced wireless, defense, and connectivity applications.

Major companies operating in the silicon carbide semiconductor device market are Infineon Technologies, ROHM Co., Ltd., STMicroelectronics, Wolfspeed Inc., Mitsubishi Electric Corporation, Toshiba Electronic Devices & Storage, onsemi, Microchip Technology / Microsemi, UnitedSiC, GeneSiC Semiconductor, Semikron Danfoss, Fuji Electric, Powerex Inc., TT Electronics, Renesas Electronics, BYD Semiconductor, InventChip Technology, II-VI (Coherent Corp.), Xiamen Sanan Integrated Circuit Co. Ltd., SK siltron CSS.

Note that the outlook for this market is being affected by rapid changes in trade relations and tariffs globally. The report will be updated prior to delivery to reflect the latest status, including revised forecasts and quantified impact analysis. The report’s Recommendations and Conclusions sections will be updated to give strategies for entities dealing with the fast-moving international environment.

Tariffs have raised procurement costs for silicon carbide wafers, power module components, and high-temperature processing equipment, with the most notable impacts seen across automotive, energy, and industrial sectors in North America, Europe, and Asia-Pacific. Import barriers limit the availability of specialty SiC substrates and epitaxy tools, slowing production expansion. Nevertheless, tariffs are fostering regional SiC ecosystem development and stimulating investment in domestic wide-bandgap semiconductor manufacturing to strengthen supply chain resilience.

The silicon carbide semiconductor device market research report is one of a series of new reports that provides silicon carbide semiconductor device market statistics, including silicon carbide semiconductor device industry global market size, regional shares, competitors with a silicon carbide semiconductor device market share, detailed silicon carbide semiconductor device market segments, market trends and opportunities and any further data you may need to thrive in the silicon carbide semiconductor device industry. This silicon carbide semiconductor device market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.

A silicon carbide semiconductor device comprises a silicon carbide substrate, a primary electrode, the first barrier layer, and an interconnecting layer. These devices are characterized by their small size, robust construction, and high efficiency, making them particularly suitable for developing power electronic devices in batteries and detectors.

The main types of silicon carbide semiconductor devices include SiC diodes, SiC transistors, and others (SiC modules, thyristors). A silicon carbide transistor is typically a normally-on junction-based transistor known for its reliability, featuring the lowest RDS (on) per unit area. These devices are available in various wafer sizes ranging from 1 inch to 4 inches, 6 inches, 8 inches, 10 inches, and above. Silicon carbide semiconductor devices are utilized by diverse end-users, including automotive, consumer electronics, aerospace and defense, medical devices, data and communication devices, energy and power, and other industries.Asia-Pacific was the largest region in the silicon carbide semiconductor device market in 2025. The regions covered in the silicon carbide semiconductor device market report are Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, Middle East, Africa. The countries covered in the silicon carbide semiconductor device market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Taiwan, Russia, South Korea, UK, USA, Canada, Italy, Spain.

The silicon carbide semiconductor device market consists of sales of silicon carbide power modules, silicon carbide metal-oxide-semiconductor field effect transistors (MOSFETs)and silicon carbide insulated-gate bipolar transistors (IGBTs). Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.

The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD unless otherwise specified).

The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.

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