Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Global Market Report 2025

The silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) market size has grown exponentially in recent years. It will grow from $1.75 billion in 2024 to $2.17 billion in 2025 at a compound annual growth rate (CAGR) of 23.9%. The growth in the historic period can be attributed to electric vehicle adoption, renewable energy integration, demand for high-power density electronics, government regulations on energy efficiency, increased use in aerospace and defense, and rising demand for fast-charging solutions.

The silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) market size is expected to see exponential growth in the next few years. It will grow to $5.26 billion in 2029 at a compound annual growth rate (CAGR) of 24.8%. The growth in the forecast period can be attributed to rising adoption of smart grids, increasing demand for energy-efficient power electronics, growth in high-speed rail electrification, increasing investments in electric aviation, and increasing reliability in industrial applications. Major trends in the forecast period include advancements in wide bandgap semiconductor technology, integration of artificial intelligence in power electronics, enhanced thermal management solutions, an increase in voltage ratings for high-power applications, and innovations in gate drivers.

The forecast of 24.8% growth over the next five years reflects a modest reduction of 0.8% from the previous estimate for this market. This reduction is primarily due to the impact of tariffs between the US and other countries. This is likely to directly affect the US through higher prices for gate oxide materials and wafer-level testing equipment, primarily sourced from Japan and the Netherlands, raising costs for renewable energy inverters. The effect will also be felt more widely due to reciprocal tariffs and the negative effect on the global economy and trade due to increased trade tensions and restrictions.

The growing adoption of electric vehicles (EVs) is expected to drive the expansion of the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market. EVs, which utilize electric motors powered by rechargeable batteries or fuel cells instead of internal combustion engines, are favored for their lower emissions and superior energy efficiency. Their rising popularity is fueled by environmental concerns, advancements in battery technology, and government incentives that make them more sustainable and accessible alternatives to traditional vehicles. SiC MOSFETs play a critical role in enhancing EV performance by enabling better energy efficiency, faster switching, and improved power management, making them ideal for high-performance EV systems. For example, according to the International Energy Agency, as of April 2024, global EV sales increased by 3.5 million units in 2023 compared to 2022 - an annual growth of 35%. Therefore, the rising adoption of EVs is directly contributing to the growth of the SiC MOSFET market.

Leading companies in the SiC MOSFET market are investing in the development of next-generation products to maximize efficiency and minimize power losses. These advanced SiC MOSFETs are engineered to offer lower conduction losses, superior thermal performance, higher power density, and faster switching speeds, making them ideal for applications such as EVs, renewable energy systems, and industrial equipment. For instance, in September 2024, STMicroelectronics N.V., a Switzerland-based semiconductor manufacturer, launched its fourth-generation STPOWER SiC MOSFET technology. The new devices, available in 750V and 1200V variants, deliver lower on-resistance, faster switching, and increased robustness. These enhancements are particularly beneficial for EV traction inverters, supporting both 400V and 800V EV architectures. The improved efficiency contributes to faster charging times and reduced overall vehicle weight, accelerating widespread EV adoption.

In August 2022, Navitas Semiconductor, a US-based power semiconductor innovator, acquired GeneSiC Semiconductor Inc. for approximately $100 million. This strategic acquisition enabled Navitas to expand its portfolio to include high-performance silicon carbide (SiC) MOSFETs and diodes. With this addition, Navitas strengthened its position in high-efficiency power electronics markets, including EVs, renewable energy, industrial automation, and aerospace. GeneSiC, also based in the US, is known for its expertise in SiC-based devices that support efficient power conversion in demanding applications.

A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is a power semiconductor device that utilizes silicon carbide material instead of conventional silicon, providing higher efficiency, faster switching speeds, and reduced power losses. This technology supports compact, energy-efficient designs with enhanced thermal performance when compared to traditional silicon-based MOSFETs.

The silicon carbide (SiC) MOSFET market primarily includes two types: SiC MOSFET modules and SiC MOSFET discretes. SiC MOSFET modules are power semiconductor devices that integrate multiple MOSFETs into a single package, offering higher power density, improved thermal management, and efficient power conversion. These devices are available across various voltage breakdown ranges, including 650-900V, 900-1200V, 1200-1700V, and above 1700V. They are manufactured using different wafer technologies, such as 200mm and 150mm wafer technology. Key application areas include power supplies, electric vehicles (EVs), renewable energy systems, motor drives, and industrial equipment. The market serves a wide range of end-use industries, including automotive, industrial, consumer electronics, telecommunications, and other related sectors.

Note that the outlook for this market is being affected by rapid changes in trade relations and tariffs globally. The report will be updated prior to delivery to reflect the latest status, including revised forecasts and quantified impact analysis. The report’s Recommendations and Conclusions sections will be updated to give strategies for entities dealing with the fast-moving international environment.

The sharp escalation of U.S. tariffs and resulting trade tensions in spring 2025 are significantly affecting the electrical and electronics sector. Key components such as semiconductors, display panels, and rare-earth metals crucial for batteries and motors are now facing heavy duties. Consumer electronics companies are seeing profit margins shrink, as fierce competition makes it difficult to pass on rising costs to consumers. At the same time, industrial electronics firms are experiencing project delays due to shortages of tariff-impacted parts like printed circuit boards. In response, businesses are shifting assembly operations to tariff-exempt nations, building up inventory reserves, and redesigning products to reduce reliance on restricted materials.

The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market research report is one of a series of new reports that provides silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market statistics, including silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) industry global market size, regional shares, competitors with a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market share, detailed silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market segments, market trends and opportunities, and any further data you may need to thrive in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) industry. This silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.

Major players in the silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) market are Mitsubishi Electric Corporation, Toshiba Corporation, Texas Instruments Incorporated, STMicoelectronics N.V., Infineon Technologies AG, ON Semiconductor Corporation, Fuji Electric Co. Ltd., Microchip Technology Inc., Qorvo Inc., ROHM Co. Ltd., Vishay Intertechnology Inc., Littelfuse Inc., Dongguan Merry Electronics Co. Ltd., Alpha and Omega Semiconductor, Wolfspeed Inc., Semikron Danfoss, Sansha Electric Manufacturing Co. Ltd., Navitas Semiconductor, WeEn Semiconductors, Micro Commercial Components (MCC), Solitron Devices Inc.

Asia-Pacific was the largest region in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market in 2024. Asia-Pacific is expected to be the fastest-growing region in the forecast period. The regions covered in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East and Africa.

The countries covered in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA, Canada, Italy, Spain.

The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market consists of revenues earned by entities by providing services such as fabrication and wafer processing, testing and validation, integration support for power electronics systems, consulting and research and development and maintenance and performance optimization. The market value includes the value of related goods sold by the service provider or included within the service offering. The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market also includes sales of silicon carbide (SiC) wafers and substrates, gate drivers, integrated circuits (ICs), and silicon carbide (SiC)-based power converters. Values in this market are ‘factory gate’ values, that is, the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors, and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.

The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD, unless otherwise specified).

The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.

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