Silicon Carbide

  • ID: 2180355
  • Book
  • 980 Pages
  • John Wiley and Sons Ltd
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This work covers the status and upcoming challenges of Silicon Carbide (SiC) Electronics with special attention to industrial application. With a list of contributors reading like the "Who′s Who" in SiC R&D, from industrial, governmental and academic research (GE, CREE Inc., Honda, Toshiba, Nissan, Infineon, University of Erlangen–Nurnberg, NASA, Fraunhofer ISE, Naval Research Lab, Rensselaer Polytechnic Institute, Kyoto University), this text strongly benefits from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
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VOL 1: Growth, Defects, and Novel Applications

1) Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

2) Bulk and Epitaxial Growth of Micropipe–free Silicon Carbide on Basal and Rhombohedral Plane Seeds

3) Formation of extended defects in 4H–SiC epitaxial growth and development of fast growth technique

4) Fabrication of High Performance 3C–SiC Vertical MOSFETs by Reducing Planar Defects

5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches

6) EPR Identification of Intrinsic Defects in 4H–SiC

7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide

8) Optical properties of as–grown and process–induced stack–ing faults in 4H–SiC

9) Characterization of defects in silicon carbide by Raman spectroscopy

10) Lifetime–killing defects in 4H–SiC epilayers and lifetime control by low–energy electron irradiation

11) Identification and carrier dynamics of the dominant lifetime limiting defect in n– 4H–SiC epitaxial layers

12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H–SiC and their Application to Device Simulation

14) Analysis of interface trap parameters from double–peak conductance spectra taken on N–implanted 3C–SiC MOS capacitors

15) Non–basal plane SiC surfaces: Anisotropic structures and low–dimensional electron systems

16) Comparative Columnar Porous Etching Studies on n–type 6H SiC Crystalline faces

17) Micro– and Nanomechanical Structures for Silicon Carbide MEMS and NEMS

18) Epitaxial Graphene: an new Material

19) Density Functional Study of Graphene Overlayers on SiC

VOL 2: Power Devices and Sensors

1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices

2) Silicon Carbide power devices –

Status and upcoming challenges with a special attention to industrial application

3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

4) Reliability aspects of SiC Schottky Diodes

5) Design, process, and performance of all–epitaxial normally–off SiC JFETs

6) Extreme Temperature SiC Integrated Circuit Technology

7) 1200 V SiC Vertical–channel–JFET based cascode switches

8) Alternative techniques to reduce interface traps in n–type 4H–SiC MOS capacitors

9) High electron mobility ahieved in n–channel 4H–SiC MOSFETs oxidized in the presence of nitrogen

10) 4H–SiC MISFETs with Nitrogen–containing Insulators

11) SiC Inversion Mobility

12) Development of SiC diodes, power MOSFETs and intellegent Power Modules

13) Reliability issues of 4H–SiC power MOSFETs toward high junction temperature operation

14) Application of SiC–Transistors in Photovoltaic–Inverters

15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs

16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H–SiC BJTs

17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar–blind light detection

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Peter Friedrichs
Tsunenobu Kimoto
Lothar Ley
Gerhard Pensl
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