Industry Standard FDSOI Compact Model BSIM-IMG for IC Design. Woodhead Publishing Series in Electronic and Optical Materials

  • ID: 4482897
  • Book
  • 350 Pages
  • Elsevier Science and Technology
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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.

The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

  • Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model
  • Explains the complex operation of the FDSOI device and its use of two independent control inputs
  • Addresses the parameter extraction challenges for those using this model
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1. FDSOI Device Concept and Compact Model
2. Core models in BSIM-IMG: Fast and Extended Range Model
3. Drain current model including real device effects
4. Leakage Current Modeling and thermal effects model
5. Modeling terminal charges and capacitances
6. Parameter extraction with BSIM-IMG compact model
7. Model Quality Testing
8. RF and noise models in BSIM-IMG
9. FDSOI Industry Perspective, Analog and RF Circuit Design with FDSOI technology
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Hu, Chenming
Chenming Hu is Distinguished Chair Professor Emeritus at UC Berkeley. He was the Chief Technology Officer of TSMC and founder of Celestry Design Technologies. He is best known for developing the revolutionary 3D transistor FinFET that powers semiconductor chips beyond 20nm. He also led the development of BSIM-- the industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. His honors include the Asian American Engineer of the Year Award, IEEE Andrew Grove Award and Solid Circuits Award as well as Nishizawa Medal, and UC Berkeley's highest honor for teaching-- the Berkeley Distinguished Teaching Award.
Khandelwal, Sourabh
Sourabh Khandelwal is currently a Postdoctoral Researcher in the BSIM Group, University of California, Berkeley. Sourabh received his PhD degree from Norwegian University of Science and Technology in 2013 and Masters' degree from Indian Institute of Technology (IIT) Bombay in 2007. From 2007 - 2010 he worked as a Research Engineer at IBM Semiconductor Research and Development Centre, developing compact models for RF SOI devices. He holds a patent and has authored several research papers in the area of device modeling and characterization. His PhD work on GaN compact model is under consideration for industry standardization by the Compact Model Coalition.
Chauhan, Yogesh Singh
Yogesh S. Chauhan is an assistant professor in EE department at Indian Institute of Technology Kanpur, India. He received Ph.D. degree in compact modeling of high voltage MOSFETs in 2007 from EPFL Switzerland. During 2007-2010, he was manager in IBM Bangalore where he led compact modeling team focusing on RF bulk and SOI transistors and ESD modeling team. During 2010-2012, he was postdoctoral fellow at University of California Berkeley, where he worked on development of bulk and multigate transistor models including BSIM6, BSIM-IMG and BSIM-CMG. He received IBM faculty award in 2013 for his contribution in compact modeling. He has co-authored over 50 conference and journal publications in the field of device compact modeling.
Mckay, Thomas
Director of RF Innovation at Globalfoundries, USA
Watts, Josef
Principal Member of Technical Staff at Globalfoundries USA
Duarte, Juan Pablo
Juan Pablo Duarte Sepúlveda is currently working toward his PhD. degree at the University of California, Berkeley. He received his BS (2010) and MS (2012) degrees in Electrical Engineering from Korea Advanced Institute of Science and Technology (KAIST). He held a position as a lecturer at Universidad Tecnica Federico Santa Maria, Valparaiso, Chile, in 2012. He has authored many papers in nanoscale semiconductor device modeling and characterization. He received the Best Student Paper Award at the 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) for the paper "Unified FinFET Compact Model: Modelling Trapezoidal Triple-Gate FinFETs”.
Kushwaha, Pragya
Postdoctoral Fellow, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA
Agarwal, Harshit
Postdoctoral Fellow at the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA.
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