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Extreme Ultraviolet Lithography - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2026-2031)

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    Report

  • 120 Pages
  • August 2026
  • Region: Global
  • Mordor Intelligence
  • ID: 5120121
The extreme ultraviolet lithography market size in 2026 is estimated at USD 25.93 billion, growing from the 2025 value of USD 23.71 billion, with 2031 projections showing USD 40.54 billion, growing at a 9.35% CAGR over 2026-2031. This report is Segmented by Product Type (Light Sources, Mirrors / Optics, and More), End-User Type (Foundries, and Integrated Device Manufacturers (IDMs)), Technology Node (7 Nm and Above, 5 Nm, and More), Light-Source Technology (Laser-Produced Plasma, Gas-Discharge Plasma, and More), and Geography (North America, Europe and More). The Market Forecasts are Provided in Terms of Value (USD).

Global Extreme Ultraviolet Lithography Market Trends and Insights

Demand for Sub-5 nm Nodes

Mass-production plans for 2 nm chips scheduled for 2025 call for line widths that only EUV exposure can achieve. TSMC has set aside USD 12.3 billion for its EUV tool fleet, a budget that targets 10-15% speed gains or 25-30% power cuts versus 3 nm designs. Smartphone and data-center chip buyers have already queued for those nodes, allowing equipment vendors to lock in multi-year backlogs. As a result, the EUV lithography market enjoys a predictable shipment pipeline that mirrors each successive node shrink.

Accelerated AI/5G/HPC Capacity Build-out

AI accelerators, 5G base-band silicon, and high-bandwidth memory all need tight pitch metallization. TSMC’s Q4 2024 revenue rose 37% year-on-year to USD 26.88 billion, illustrating the scale of demand. To keep pace, the company budgeted USD 32-36 billion for capex in 2025, including roughly 60 EUV scanners. Such orders shorten tool lead times and bring smaller suppliers - pellicle, mask blank, and resist vendors - into the growth loop of the EUV lithography market.

USD 150 m+ System Cost and Fab Retrofit Complexity

Baseline EUV scanners list at roughly USD 150 million, and high-NA units more than double that figure. Fabs also upgrade clean-room airflow, vibration damping, and power distribution. Smaller foundries struggle to amortize such outlays, risking a technology gap that narrows potential customers for the EUV lithography market. Dual-lane operations, where DUV and EUV run in parallel, further enlarge capital budgets.

Other drivers and restraints analyzed in the detailed report include:

  • Government Semiconductor Subsidy Programs
  • Transition to High-NA EUV Platforms
  • Single-Vendor Dependency and Supply-Chain Bottlenecks

Segment Analysis

Light sources accounted for 45.85% of the EUV lithography market size in 2025, underscoring their status as the most expensive subsystem in a scanner. Current laser-produced-plasma (LPP) modules convert CO₂-laser pulses and tin droplets into 13.5 nm radiation, but sub-5% conversion efficiency continues to spur research into free-electron alternatives. High average power also drives upgrades such as advanced collector-mirror coatings and debris filters, with service contracts that guarantee power stability, adding annuity revenue for suppliers.

Pellicles are the fastest-growing product, with an 17.9% CAGR projected through 2031. Carbon-nanotube membranes now deliver 97-98% transmittance and withstand 1,000 W exposure, a step change from earlier silicon-nitride films. Major foundries have cleared CNT pellicles for 2 nm process flows, opening a replacement cycle in which every mask layer needs protection; rising scale is already trimming unit cost.

Foundries accounted for 52.75% of the EUV lithography market in 2025 because fab-less customers rely on contract manufacturing. Their specialization lets them order scanners in batches, lock in service capacity, and co-develop processes with tool suppliers. TSMC alone controlled 56% of installed EUV exposure capacity, translating geographic clustering in Taiwan into supply-chain efficiencies and learning-curve cost reductions.

IDMs, however, are expanding faster at a 13.6% CAGR. Intel’s IDM 2.0 model reopens its fabs to external clients while adding High-NA capacity reserved through 2025. Subsidy grants lower its effective capital cost, narrowing the unit-cost gap with pure-play foundries. As IDMs upgrade to gate-all-around transistors, they internalize design-process feedback loops, an advantage that should lift their share of the EUV lithography market over the decade.

Complete Report Scope:

  • By Product Type
    • Light Sources
    • Mirrors / Optics
    • Masks
    • Pellicles
    • Mask Blanks
  • By End-User Type
    • Foundries
    • Integrated Device Manufacturers (IDMs)
  • By Technology Node
    • 7 nm and above
    • 5 nm
    • 3 nm
    • 2 nm and below
  • By Light-Source Technology
    • Laser-Produced Plasma (LPP)
    • Gas-Discharge Plasma
    • Vacuum Spark
    • ERL-EUV
  • By Geography
    • North America
      • United States
      • Canada
    • South America
      • Brazil
      • Rest of South America
    • Europe
      • Germany
      • Netherlands
      • United Kingdom
      • France
      • Italy
      • Russia
      • Rest of Europe
    • Asia-Pacific
      • Taiwan
      • South Korea
      • Japan
      • China
      • Singapore
      • Rest of Asia-Pacific
    • Middle East and Africa
      • Middle East
        • GCC
        • Turkey
        • Saudi Arabia
        • Rest of Middle East
      • Africa
        • South Africa
        • Rest of Africa

Geography Analysis

Asia-Pacific led the EUV lithography market with 63.85% of 2025 revenue. Taiwan’s TSMC alone has installed roughly 60 scanners financed by the USD 12.3 billion EUV budget noted above. Samsung’s Korean fabs will bring their first High-NA tool online in Q1 2025. Japanese suppliers such as Hoya remain the primary source of EUV mask blanks, further reinforcing regional clustering.

North America is gaining momentum. The CHIPS Act earmarks USD 825 million for an EUV Accelerator in Albany, while Intel’s High-NA roll-out benefits from early access to all first-wave scanners. Department of Energy grants fund next-generation light-source research at Lawrence Livermore National Laboratory, positioning the region as an innovation hub.

The Middle East and Africa region, although starting from a small base, is forecast to grow at an 10.9% CAGR to 2031 as sovereign wealth funds in the UAE and Saudi Arabia invest in AI infrastructure that will ultimately require advanced chip supply. Early memoranda with U.S. tool vendors cover pilot fabs and clean-room engineering, leaving open a path to EUV adoption once ecosystems mature.

List of Companies Covered in this Report:

  • ASML Holding N.V.
  • Canon Inc.
  • Nikon Corporation
  • ZEISS SMT
  • Ushio Inc.
  • Gigaphoton Inc.
  • Cymer LLC
  • Toppan Photomasks Inc.
  • Hoya Corporation
  • AGC Inc.
  • Shin-Etsu Chemical Co.
  • JSR Corp.
  • Tokyo Ohka Kogyo (TOK)
  • DuPont de Nemours Inc.
  • Carl Zeiss High-NA Systems
  • Eulitha AG
  • Heidelberg Instruments Mikrotechnik GmbH
  • KLA Corporation
  • Applied Materials Inc.
  • Lam Research Corp.
  • Hitachi High-Tech Corp.
  • Inpria Corporation
  • JEOL Ltd.
  • Veeco Instruments Inc.
  • Onto Innovation Inc.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

Table of Contents

1 INTRODUCTION
1.1 Study Assumptions and Market Definition
1.2 Scope of the Study
2 RESEARCH METHODOLOGY3 EXECUTIVE SUMMARY
4 MARKET LANDSCAPE
4.1 Market Overview
4.2 Market Drivers
4.2.1 Demand for < 5 nm logic and memory nodes
4.2.2 Accelerated AI/5G/HPC capacity build-out
4.2.3 Government semiconductor subsidy programs
4.2.4 Transition to High-NA (0.55 NA) EUV platforms
4.2.5 Productivity leap from pellicle membrane breakthroughs
4.2.6 ERL-based compact EUV light-source R&D momentum
4.3 Market Restraints
4.3.1 USD 150 m+ system cost and fab retrofit complexity
4.3.2 Single-vendor dependency and supply-chain bottlenecks
4.3.3 Stochastic defectivity of EUV photo-resists
4.3.4 Scarcity of EUV-trained field service engineers
4.4 Value Chain Analysis
4.5 Regulatory Landscape
4.6 Technological Outlook
4.7 Porter’s Five Forces Analysis
4.7.1 Bargaining Power of Suppliers
4.7.2 Bargaining Power of Buyers
4.7.3 Threat of New Entrants
4.7.4 Threat of Substitutes
4.7.5 Intensity of Competitive Rivalry
4.8 Assessment of the Impact of Macroeconomic Factors
5 MARKET SIZE AND GROWTH FORECASTS (VALUE)
5.1 By Product Type
5.1.1 Light Sources
5.1.2 Mirrors / Optics
5.1.3 Masks
5.1.4 Pellicles
5.1.5 Mask Blanks
5.2 By End-User Type
5.2.1 Foundries
5.2.2 Integrated Device Manufacturers (IDMs)
5.3 By Technology Node
5.3.1 7 nm and above
5.3.2 5 nm
5.3.3 3 nm
5.3.4 2 nm and below
5.4 By Light-Source Technology
5.4.1 Laser-Produced Plasma (LPP)
5.4.2 Gas-Discharge Plasma
5.4.3 Vacuum Spark
5.4.4 ERL-EUV
5.5 By Geography
5.5.1 North America
5.5.1.1 United States
5.5.1.2 Canada
5.5.2 South America
5.5.2.1 Brazil
5.5.2.2 Rest of South America
5.5.3 Europe
5.5.3.1 Germany
5.5.3.2 Netherlands
5.5.3.3 United Kingdom
5.5.3.4 France
5.5.3.5 Italy
5.5.3.6 Russia
5.5.3.7 Rest of Europe
5.5.4 Asia-Pacific
5.5.4.1 Taiwan
5.5.4.2 South Korea
5.5.4.3 Japan
5.5.4.4 China
5.5.4.5 Singapore
5.5.4.6 Rest of Asia-Pacific
5.5.5 Middle East and Africa
5.5.5.1 Middle East
5.5.5.1.1 GCC
5.5.5.1.2 Turkey
5.5.5.1.3 Saudi Arabia
5.5.5.1.4 Rest of Middle East
5.5.5.2 Africa
5.5.5.2.1 South Africa
5.5.5.2.2 Rest of Africa
6 COMPETITIVE LANDSCAPE
6.1 Market Concentration
6.2 Strategic Moves
6.3 Market Share Analysis
6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
6.4.1 ASML Holding N.V.
6.4.2 Canon Inc.
6.4.3 Nikon Corporation
6.4.4 ZEISS SMT
6.4.5 Ushio Inc.
6.4.6 Gigaphoton Inc.
6.4.7 Cymer LLC
6.4.8 Toppan Photomasks Inc.
6.4.9 Hoya Corporation
6.4.10 AGC Inc.
6.4.11 Shin-Etsu Chemical Co.
6.4.12 JSR Corp.
6.4.13 Tokyo Ohka Kogyo (TOK)
6.4.14 DuPont de Nemours Inc.
6.4.15 Carl Zeiss High-NA Systems
6.4.16 Eulitha AG
6.4.17 Heidelberg Instruments Mikrotechnik GmbH
6.4.18 KLA Corporation
6.4.19 Applied Materials Inc.
6.4.20 Lam Research Corp.
6.4.21 Hitachi High-Tech Corp.
6.4.22 Inpria Corporation
6.4.23 JEOL Ltd.
6.4.24 Veeco Instruments Inc.
6.4.25 Onto Innovation Inc.
7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK
7.1 White-space and Unmet-need Assessment

Companies Mentioned (Partial List)

A selection of companies mentioned in this report includes, but is not limited to:

  • ASML Holding N.V.
  • Canon Inc.
  • Nikon Corporation
  • ZEISS SMT
  • Ushio Inc.
  • Gigaphoton Inc.
  • Cymer LLC
  • Toppan Photomasks Inc.
  • Hoya Corporation
  • AGC Inc.
  • Shin-Etsu Chemical Co.
  • JSR Corp.
  • Tokyo Ohka Kogyo (TOK)
  • DuPont de Nemours Inc.
  • Carl Zeiss High-NA Systems
  • Eulitha AG
  • Heidelberg Instruments Mikrotechnik GmbH
  • KLA Corporation
  • Applied Materials Inc.
  • Lam Research Corp.
  • Hitachi High-Tech Corp.
  • Inpria Corporation
  • JEOL Ltd.
  • Veeco Instruments Inc.
  • Onto Innovation Inc.