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Emerging Memories Take Off Report (2021)

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    Report

  • 230 Pages
  • July 2021
  • Region: Global
  • Coughlin Associates
  • ID: 5544424

Current memory technologies including flash memory (NAND and NOR), DRAM and SRAM are facing potential technology limits to their continued improvement. As a result, there are intense efforts to develop new memory technologies.  Most of these new technologies utilize nonvolatile memory technologies and can be used for long-term storage or to provide a memory that does not lose information when power is not applied. This offers advantages for battery and ambient powered devices and also for energy savings in data centres.

The memories addressed in this report include PCM, RRAM, FRAM, MRAM, STT MRAM and a variety of less mainstream technologies such as carbon nanotubes.  Based upon the level of current development and the characteristics of these technologies, resistive RAM (RRAM) appears to be a potential replacement for flash memory.   However, flash memory has several generations of technologies that will be implemented before a replacement is required.  Thus, this transition will not fully occur until the next decade at the earliest.

Micron and Intel’s introduction of 3D XPoint Memory, a technology that has high endurance, performance much better than NAND, although somewhat slower than DRAM, and higher density than DRAM; is impacting the need for DRAM.  Intel introduced NVMe SSDs with its Optane technology (using 3D XPoint) in 2017 and started shipping DIMM-Optane modules in 2019.  3D XPoint uses a type of phase change technology.

Magnetic RAM (MRAM) and spin tunnel torque RAM (STT MRAM) are starting to replace sNOR, SRAM and possibly DRAM.  The rate of development in STT MRAM and MRAM capabilities will result in gradually lower prices, and the attractiveness of replacing volatile memory with high speed and high endurance nonvolatile memory make these technologies very competitive, assuming that their volume increases to reduce production costs (and thus purchase prices).

Ferroelectric RAM (FRAM) and some RRAM technologies have some niche applications and with the use of HfO FRAM, the number of niche markets available for FRAM could increase in number.

Moving to a nonvolatile solid-state main memory and cache memory will reduce power usage directly as well as enable new power-saving modes, provide faster recovery from power off and enable more stable computer architectures that retain their state even when power is off.  Eventually, spintronic technology, that uses spin rather than current for logic processes, could be used to make future microprocessors.  Spin-based logic could enable very efficient in-memory processing.

The use of a nonvolatile technology as an embedded memory combined with CMOS logic has great importance in the electronics industry. As a replacement for a multi-transistor SRAM, STT MRAM could reduce the number of transistors and thus provide a low cost, higher-density solution. A number of enterprise and consumer devices use MRAM, acting as an embedded cache memory, and all of the major foundry companies are offering MRAM as embedded memory in SoC products.

The availability of STT MRAM has accelerated this trend and allows higher capacities. Because of the compatibility of MRAM and STT-RAM processes with conventional CMOS processes, these memories can be built directly on top of CMOS logic wafers or potentially incorporated during CMOS manufacturing. Flash memory doesn’t have the same compatibility with conventional CMOS. The power savings of nonvolatile and simpler MRAM and STT MRAM, when compared with SRAM, is significant.  As MRAM $/GB costs approach those of SRAM, this replacement could cause significant market expansion.

Table of Contents

The AuthorsExecutive SummaryIntroduction
Why Emerging Memories Are Popular
  • Scaling Limits for Entrenched Technologies
  • 3D Nand Flash Technologies
  • Future Flash Memories
  • Embedded Nor and Sram Scaling Challenges
  • Standalone Nand & Dram Scaling Concerns
  • Technical Advantages
  • Alternatives to Using Emerging Memories
  • Potential Cost/Gb Advantages
  • The Crucial Importance of the Economies of Scale
  • Which Applications Want Emerging Memories First?
How a New Memory Layer Improves Computer Performance
  • How Persistence Changes the Memory/Storage Hierarchy (Storage Class Memories)
  • Stt Mram
  • Reram
  • Changes in Computer Memory Usage
  • Standardizing the Persistent Memory Software Interface
  • In-Memory Computing Possibilities
  • Fewer Constraints on Mcu Programmers
Understanding Bit Selectors
Resistive Ram, Reram, Rram, Memristor
  • Reram Device Function
  • Symetrix’ Ceram
  • Hp’s Memristor
  • Stacked Reram Arrays
  • Reram Cmos Integration
  • 3D Stacked Reram Crosspoint Specifications
  • 3D Nand Approach to Reram
  • Reram and Artificial Intelligence
  • Current Reram Status
  • Ferroelectric Ram, Feram, Fram
  • Operation of Fram
  • Fram Device Characteristics
Ferroelectric Field Effect Transistor Ram (Fefet)
  • 3D Fefet Fram
  • Antiferroelectrics and Ferroelectric Tunnel Junctions
  • The Future of Fram
Phase Change Memory (Pcm)
  • Operation of Pcm
  • Advantages and Disadvantages
  • Pcm Applications
  • Intel/Micron 3D Crosspoint Memory
  • Applications
Mram (Magnetic Ram), Stt Mram (Spin Transfer Torque Mram)
  • Mram
  • Stt Mram
  • How Stt Works
  • Stt Manufacturing
  • Stt Strengths & Weaknesses
  • Spin-Orbit Torque Mram
  • Meram, An Alternative Spin Memory Device
  • Racetrack Memory
  • Mram in Artificial Intelligence
Other Emerging Memory Types
  • Carbon Nanotubes (Cnts)
  • Polymeric Ferroelectric Ram (Pfram)
  • Iii-V Floating Gate
  • Lithography:
  • Multi-Patterning:
  • Future Lithography
  • Nano-Imprinting Lithography
  • Extreme Uv (Euv) Technology
3D Memory Circuit Design
  • 3D Memory Circuit Approaches
Summary of Solid-State Memory & Storage TechnologiesEmerging Memories and New Materials
Emerging Memory Process Equipment
  • Mram and Stt Mram Process Equipment
  • Physical Vapor Deposition
  • Ion Beam and Plasma Etching
  • Photolithography (Patterning)
  • Other Process Equipment
  • Device Testing
  • Mram and Stt Mram Consortia
  • Phase Change Manufacturing Equipment
Memory is Driving Semiconductor Capital Spending
Market Projections for Mram, and 3D Xpoint Memory
  • Mram Scenario Estimates
  • 3D Xpoint Banded Estimates
  • Combined Emerging Memory Estimates
Estimates of Mram Capital Equipment Demand
  • Ion Beam Etching Equipment
  • Patterning Equipment
  • Magnetic Annealing Equipment
  • Physical Vapor Deposition Equipment
  • Test and Other Equipment
  • Summary of Mram Equipment Demand
Company Information
  • Memory and Applications Companies
  • 4Ds Memory
  • Adesto Technologies
  • Ambiq
  • Antaios
  • Arm
  • Avalanche Technology
  • Bae Systems
  • Besang
  • Caes
  • Cao-Sip
  • Cea-Leti
  • Cerfe Labs
  • Cies
  • Cobham-Aeroflex
  • Crocus Technology
  • Crossbar
  • Cypress
  • Dialog Semiconductor
  • Evaderis
  • Everspin
  • Ferroelectric Memory Company
  • Fujitsu Semiconductor
  • Gigadevice Semiconductor, Inc
  • Globalfoundries
  • Grandis
  • Great
  • Hpe
  • Honeywell
  • Ibm
  • Imec
  • Institute of Microelectronics (Chinese Academy of Science)
  • Infineon
  • Integrated Device Technology (Idt)
  • Intel
  • Intermolecular
  • Intrinsic
  • Kioxia
  • Knowm
  • Lapis Semiconductor
  • Leti
  • Microchip
  • Micron Technology
  • Microsemi
  • Namlab
  • Nantero
  • Nec
  • Numem
  • Nuvoton
  • Nve
  • Nxp
  • Ovonyx
  • Panasonic
  • Qualcomm
  • Rambus
  • Ramtron
  • Reliance Memory
  • Renesas Electronics
  • Rohm
  • Samsung Semiconductor
  • Sandisk
  • Seagate Technology
  • Sk Hynix
  • Sony Corporation
  • Spin-Ion
  • Spin Memory
  • Spintec
  • Stmicroelectronics
  • Symetrix
  • Tdk
  • Texas Instruments
  • Thin Film Electronics
  • Unidym
  • Weebit Nano
  • Western Digital
  • Winbond
  • Semiconductor Fab Companies
  • Db Hitek
  • Globalfoundries
  • Silterra
  • Smic
  • Towerjazz
  • Tsmc
  • Umc
  • Capital Equipment Companies
  • Accretech
  • Anelva
  • Applied Materials
  • Asm
  • Asml
  • Bruker
  • Canon
  • Canon-Anelva
  • Capres A/S
  • Eg Systems
  • Hitachi High Technology
  • Hprobe
  • Integral Solutions, Inc. (Isi)
  • Jusung Engineering
  • Keysight Technologies
  • Kla Tencor
  • Lake Shore
  • Lam Research
  • Leuven Instruments
  • Magoasis
  • Microsense
  • Nanomagnetics Instruments
  • Nanometrics
  • Neoark
  • Nikon
  • Onto Innovation
  • Oxford Instruments
  • Plasma Therm
  • Shb
  • Singulus Technologies
  • Smart Tip
  • Tokyo Electron
  • Tokyo Seimitsu
  • Ulvac
  • Veeco
Further Reading
List of Figures
Table 1. Dram and Slc Nand Die Sizes
Table 2. Comparison of Various Solid State Memory Technologies
Table 3. Summary of Emerging Memory Technologies
Table 4. Some Mram Process Equipment Vendors
Table 5. Tokyo Electron Magnetic Annealing Product Line-Up
Table 6. 2020 Versus 2019 Equipment Spending by Region ($B)
Table 7. Standalone Memory Prices, 2019-2031 ($/Gb)
Table 8. Standalone Memory Annual Baseline Petabyte Shipments, 2019 Through 2031
Table 9. Assumptions for Baseline Standalone Mram Model
Table 10. Standalone Memory Annual Baseline Revenue, 2020-2030 ($M)
Table 11. Three Scenerios for Standalone Mram Wafer Consumption, 2020-2031
Table 12. Three Scenarios for Embedded Mram Annual Wafer Consumption, 2020-2031
Table 13. Three Scenarios for Combined Mram Annual Wafer Consumption, 2020-2031
Table 14. Three Scenarios Combined Mram Production, 2020-2031 (Petabytes)
Table 15. Three Scenarios for Combined Mram Revenues, 2020-2031 ($M)
Table 16. Three Scenarios for 3D Xpoint Petabyte Production,
Table 17. Three Scenarrios for 3D Xpoint Revenues, 2020-2031186
Table 18. Combined Mram and 3D Xpoint Production, High Estimate, 2020-2031 (Petabytes)
Table 19. Combined Mram and 3D Xpoint Production, Baseline Estimate, 2020-2031 (Petabytes)
Table 20. Combined Mram and 3D Xpoint Production, Low Estimate, 2020-2031 (Petabytes)
Table 21. Combined Mram and 3D Xpoint Revenues, High Estimate, 2020-2031 ($M)
Table 22. Combined Mram and 3D Xpoint Revenues Baseline Estimate, 2020-2031 ($M)
Table 23. Combined Mram and 3D Xpoint Revenues Low Estimate, 2020-2031 ($M)
Table 24. Mram Ion Beam Etching Equipment Baseline Unit Shipment Estimates, 2020-2031
Table 25. Mram Ion Beam Etching Equipment Baseline Spending Estimates, 2020-2031
Table 26. Mram Patterning Equipment Baseline Unit Shipment Estimates, 2020-2031
Table 27. Mram Patterning Equipment Baseline Spending Estimates, 2020-2031 ($M)
Table 28. Mram Magnetic Annealing Equipment Baseline Unit Shipment Estimates 2020-2031
Table 29. Mram Magnetic Annealing Equipment Baseline Spending Estimates 2020-2031
Table 30. Mram Physical Vapor Deposition Equipment Baseline Unit Shipment Estimates, 2020-2031
Table 31. Mram Physical Vapor Deposition Equipment Baseline Spending Estimates, 2020-2031 ($M)
Table 32. Mram Test and Other Equipment Baseline Unit Shipment Estimates, 2020-2031
Table 33. Mram Test and Other Equipment Price Estimates, 2020-
Table 34. Mram Test and Other Equipment Baseline Spending Estimates, 2020-2031 ($M)
Table 35. Mram Combined Equipment Baseline Unit Shipment Estimates, 2020-2031
Table 36. Mram Combined Equipment Baseline Spending, 2020-2031 ($M)
List of Figures
Figure 1. Memory Density and Power Requirements by Application Category
Figure 2. Solid State Memory/Storage Technologies
Figure 3. 3D Nand Flash Memory Topology
Figure 4. Toshiba's Bics and Samsung's Tcat 3D Nand Structures
Figure 5. Cost of Transition from One Nand Manufacturing Process to the Next
Figure 6. Projected Nand Flash Chip Technology Roadmap
Figure 7. Sram Cell Sizes Shrink More Slowly Than Processes
Figure 8. Historically, Sram Caches Scaled in Proportion to Processor Logic
Figure 9. Sram in Future Processes Will Scale More Slowly Than Processor Logic
Figure 10. Sram Cell Size Vs. Process for Intel, Samsung, and Tsmc
Figure 11. Nand Flash Prices Crossed Below Dram in 2004
Figure 12. 2004 Nand Gigabyte Shipments Reached 1/3Rd That of Dram
Figure 13. Estimated Intel 3D Xpoint Quarterly Losses
Figure 14. Comparison of Memory and Storage Technologies by Price Per Gigabyte and Performance
Figure 15. Everspin 1 Gb Stt Mram Chip
Figure 16. Progression of Storage Technologies With Nonvolatile Solid-State Storage
Figure 17. Contributors to Nonvolatile Solid-State Storage Latency With Legacy and Current Solid-State Nonvolatile Technologies
Figure 18. Reram System on Chip
Figure 19. Bit Selectors - 3-Terminal (Left) 2-Terminal (Right)
Figure 20. Overhead View of a Simple Crosspoint Array
Figure 21. Reading When One Bit is in a Low-Resistance State
Figure 22. Sneak Paths Occur When Multiple Bits Are in a Low Resistance State
Figure 23. Space Penalty of a 3-Terminal Selector
Figure 24. Bidirectional Diode Selector
Figure 25. A 1Tnr Selector Configuration
Figure 26. 3D Crosspoint Array Stacking
Figure 27. Stacked Crosspoint Memory Array
Figure 28. Reram Filament Cell Conduction and Switching
Figure 29. Reram Scaling
Figure 30. Reram Resistance Scaling
Figure 31. Taox Reram Device
Figure 32. Current Levels and Voltages for Reram Switching
Figure 33. Comparing Ceram Cell Structure to Reram
Figure 34. Where the Memristor Fits in the World of Passive Cmponents
Figure 35. Reram Stacked Crosspoint Array
Figure 36. Reram Cmos Integration
Figure 37. Two-Mask Reram Element in Tungsten Vias
Figure 38. Reram Memory Bank
Figure 39. 3D Reram Structure/Process
Figure 40. A Simplified View of a Neural Network
Figure 41. Early Ferroelectric Memory - 1955 Bell Labs 256-Bit Device
Figure 42. Hysteresis Curve of Ferroelectric Memory
Figure 43. Publication Count for Fefet Research Papers
Figure 44. Amorphous, Crystalline, and Ferroelectric Hafnium Oxide
Figure 45. Pzt and Hfo Capacitors, Showing Typical Dimensions79
Figure 46. Fram Perovskite Displacement
Figure 47. Memory Properties of Ferroelectric Hafnium Oxide as Derived from Experiments and Expected Material Limits
Figure 48. Fram Planar Cell Structure
Figure 49. Fefet Transistor
Figure 50. 3D Hafnium Oxide Fram Built Using 3D Nand Techniques
Figure 51. Crosspoint Memory Using Pcm Cells
Figure 52. Characteristics of the Read, Write and Erase Cycle for Pcm Materials
Figure 53. Pcm Memory Cell
Figure 54. Cross Section of Pcm Cell
Figure 55. Stmicroelectronics' Transistor-Selected Pcm Cell89
Figure 56. Intel's View of the Memory-Storage Hierarchy
Figure 57. Redis Virtual Machine Count Vs. Memory Size
Figure 58. Basic Cell Diagram for Field Switched Mram
Figure 59. Field Switched Array Mram Architecture
Figure 60. Globalfoundries Roadmap for Embedded Mram
Figure 61. Tsmc’S Embedded Mram/Rram Plans
Figure 62. Parallel to Antiparallel Switching
Figure 63. Spin Transfer Torque Operation
Figure 64. in Plane and Perpendicular Magnetic Tunnel Cells
Figure 65. Stt Mram Cell Structure
Figure 66. Everspin Stt Mram Device
Figure 67. Stt Mram Current Operation
Figure 68. Multi-Bit Mram Cell Read Out
Figure 69. A Comparison of Dram, Nand Flash and Stt Mram
Figure 70. Stt Mram Cross Section
Figure 71. Bit Dimensions of Ideal Mram, Dram, Planar Nand Flash and Hdd
Figure 72. Stt Mram Embedded Memory
Figure 73. Stt-Mram to Sot-Mram
Figure 74. Example Meram Device Structure
Figure 75. Meram Stack
Figure 76. Ibm's Racetrack Memory - Conceptual Diagram
Figure 77. Laboratory Embodiment of Ibm's Racetrack Memory
Figure 78. Gyrfalcon Ai Accelerator With Mram
Figure 79. Numen Dnn Device With Mram for Space Applications
Figure 80. Ambiq Apollo IoT Soc
Figure 81. Sony Emram Buffer Memory for Cis
Figure 82. Cnt Fabric
Figure 83. Pfram 3-Layer Polymeric Memory
Figure 84. Original Single-Patterned Features
Figure 85. Clad the Sides of the Original Pattern
Figure 86. Remove the Original Pattern. The Remaining Cladding is a Doubled Pattern
Figure 87. Clad the Sides of the Doubled Pattern
Figure 88. Remove the Doubled Pattern. The Remaining Cladding is the Quadrupled Pattern
Figure 89. Nanoimprint Process
Figure 90. Nanoimprint Depressions
Figure 91. Fluid Dispense Process
Figure 92. Light Spectrum
Figure 93. Euv Scanning Lithographic Exposure System
Figure 94. Bit Density of Largest Memories Presented at Ieee Research Conferences, 2001-2019
Figure 95. Future Memory/Storage Hierarchy
Figure 96. Example Elements to Enable New Memories
Figure 97. Comparison of Multiple Emerging Memory Cell Structures
Figure 98. Mram Memory Cell
Figure 99. Cross-Section of An Mram Device Showing Details of the Cmos Substrate and Magnetic Layers Fabricated on Top of the Substrate
Figure 100. Mram Manufacturing Process Flow
Figure 101. Key Mram Process Equipment
Figure 102. Applied Materials Cmp System
Figure 103. Applied Materials Endura Platform
Figure 104. Canon Anelva Ec7800 Pvd Equipment
Figure 105. Canon Anelva Nc7900 Pvd Equipment
Figure 106. Singulus Timaris Ii Pvd Cluster Tool Platform
Figure 107. Singulus Pvd Cluster Tool Platforms
Figure 108. Tokyo Electron Exim Pvd Cluster Tool Platform
Figure 109. Ulvac Magest S200 Multilayer Thin Film Deposition System
Figure 110. Veeco Nexus Ibd Ion Beam Deposition System
Figure 111. A Three Grid Ion Beam Extraction System
Figure 112. Schematic of Mtj Etching Process
Figure 113. Applied Materials Centura Tool
Figure 114. Canon Anelva Nc8000 Ion Beam Etch Machine
Figure 115. Hitachi High Technology E-600/8000 Nonvolatile Etch System
Figure 116. Lam Research Kiyo Ion Beam Etching Chamber
Figure 117. Oxford Instruments Ionfab 300 Ibe System
Figure 118. Plasma Therm Pinnacle Ion Beam Etch and Deposition System
Figure 119. Ulvac Ulhite Ne-7800H Non-Volatile Material Etching Tool
Figure 120. Veeco Nexus Ibe-420I Ion Beam Etching System
Figure 121. Asml Deep Uv Photolithography Tool
Figure 122. Nikon Photolithographic Product Lines
Figure 123. Canon Lithographic I-Line Stepper Product Line
Figure 124. Tokyo Electron Mrt300 Magnetic Annealing Tool
Figure 125. Isi Wla 3000 Wafer Level Quasi-Static Tester
Figure 126. Hprobe 3D High Magnetic Field Wafer Probe
Figure 127. Keysight Technology Nx5730A Mram Test Platform
Figure 128. Microsense (Kla/Tencor) Polar Kerr System for Perpendicular Stt Mram
Figure 129. Afm Equipment
Figure 130. Applied Materials Endura Impulse for Pcm and Reram
Figure 131. Semi's Wafer Fab Equipment Spending History and Forecast
Figure 132. Equipment Spending by Region
Figure 133. Volume Semiconductor Fabs by Region
Figure 134. Profitability of Nand Flash Manufacturers
Figure 135. Chart of Baseline $/Gb for Standalone Memory
Technologies from 2018 Through 2030
Figure 136. Standalone Memory Annual Baseline Petabyte Shipments, 2019-2031
Figure 137. Standalone Memory Baseline Annual Revenue, 2019- 2030 ($M)
Figure 138. Three Scenarios for Standalone Mram Wafer Consumption, 2020-2031
Figure 139. Three Scenarios for Embedded Mram Annual Wafer Consumption , 2020-2031
Figure 140. Three Secenarios for Combined Mram Annual Wafer Consumption, 2020-2031
Figure 141. Three Scenarios for Combined Mram Production, 2020- 2031 (Petabytes)
Figure 142. Three Scenarios for Combined Mram Revenues, 2020- 2031 ($B)
Figure 143. Three Scenarios for 3D Xpoint Petabyte Production, 2020-2031
Figure 144. Three Scenarios for 3D Xpoint Revenues, 2020-2031187
Figure 145. Three Scenarios of Combined Mram and 3D Xpoint Exabyte Production, 2020-2031
Figure 146. Three Scenarios of Combined Mram and 3D Xpoint Revenues, 2020-2031 ($B)
Figure 147. Capital Equipment Estimate Process Flow
Figure 148. Three Scenarios of Mram Ion Beam Etching Equipment Spending, 2020-2031
Figure 149. Three Scenarios of Mram Patterning Equipment Spending, 2020-2031 ($M)
Figure 150. Three Scenarios of Mram Magnetic Annealing Equipment Spending 2020-2031
Figure 151. Three Scenarios of Mram Physical Deposition Equipment Spending, 2020-2030 ($M)
Figure 152. Mram Combined Test and Other Equipment Baseline Spending, 2020-2031 ($M)
Figure 153. Three Scenarios of Mram Test and Other Equipment Spending, 2020-2031 ($M)
Figure 154. Mram Combined Baseline Equipment Spending Estimates, 2020-2031 ($M)
Figure 155. Three Scenarios for Mram Combined Equipment Spending, 2020-2031 ($M)

Executive Summary

The publisher announces the publication of its detailed 230 page, 36 tables and 155 figure report addressing technology developments in non-volatile solid-state storage and memory technologies and the impact on manufacturing and test equipment. These non-volatile memory/storage products will impact the digital storage/memory hierarchy including DRAM, SRAM, NOR Flash, NAND Flash and hard disk drives. Dr Thomas Coughlin, President, Coughlin Associates and Jim Handy of Objective Analysis are the authors of this comprehensive and authoritative report. The report includes a PDF document and a power-point file with all figures and tables from the report to use within your company. You will also receive a free subscription to the Digital Storage Technology Newsletter.

Companies Mentioned

  • 4Ds Memory
  • Adesto Technologies
  • Ambiq
  • Antaios
  • Arm 
  • Avalanche Technology 
  • Bae Systems
  • Besang 
  • Caes
  • Cao-Sip 
  • Cea-Leti
  • Cerfe Labs
  • Cies
  • Cobham-Aeroflex
  • Crocus Technology
  • Crossbar 
  • Cypress
  • Dialog Semiconductor
  • Evaderis
  • Everspin
  • Ferroelectric Memory Company
  • Fujitsu Semiconductor
  • Gigadevice Semiconductor, Inc
  • Globalfoundries
  • Grandis 
  • Great
  • Hpe
  • Honeywell 
  • Ibm
  • Imec
  • Institute of Microelectronics (Chinese Academy of Science)
  • Infineon 
  • Integrated Device Technology (Idt)
  • Intel 
  • Intermolecular 
  • Intrinsic
  • Kioxia
  • Knowm
  • Lapis Semiconductor
  • Leti
  • Microchip
  • Micron Technology 
  • Microsemi
  • Namlab
  • Nantero 
  • Nec
  • Numem 
  • Nuvoton
  • Nve
  • Nxp
  • Ovonyx
  • Panasonic 
  • Qualcomm
  • Rambus
  • Ramtron
  • Reliance Memory
  • Renesas Electronics 
  • Rohm
  • Samsung Semiconductor
  • Sandisk
  • Seagate Technology
  • Sk Hynix
  • Sony Corporation
  • Spin-Ion
  • Spin Memory
  • Spintec
  • Stmicroelectronics 
  • Symetrix
  • Tdk
  • Texas Instruments
  • Thin Film Electronics
  • Unidym
  • Weebit Nano 
  • Western Digital
  • Winbond
  • Semiconductor Fab Companies
  • Db Hitek
  • Globalfoundries
  • Silterra 
  • Smic
  • Towerjazz
  • Tsmc
  • Umc
  • Capital Equipment Companies
  • Accretech
  • Anelva
  • Applied Materials
  • Asm
  • Asml
  • Bruker 
  • Canon 
  • Canon-Anelva
  • Capres A/S
  • Eg Systems
  • Hitachi High Technology
  • Hprobe
  • Integral Solutions, Inc. (Isi)
  • Jusung Engineering
  • Keysight Technologies
  • Kla Tencor
  • Lake Shore 
  • Lam Research
  • Leuven Instruments
  • Magoasis
  • Microsense
  • Nanomagnetics Instruments 
  • Nanometrics
  • Neoark
  • Nikon
  • Onto Innovation
  • Oxford Instruments 
  • Plasma Therm
  • Shb
  • Singulus Technologies
  • Smart Tip
  • Tokyo Electron
  • Tokyo Seimitsu 
  • Ulvac
  • Veeco