High Power Insulated-gate Bipolar Transistor (IGBT) Drivers is a comprehensive theoretical and practical reference resource for IGBT industry professionals and researchers.
Table of Contents
1. Overview2. Electrical characteristics of IGBT modules ·
3. Drive design
4. IGBT multi-device drive control technology
5. Drive reliability design
6. Drive test and test
7. High-power IGBT driver application cases
Authors
He Zhiyuan China Electric Power Research Institute Co., Ltd, China.Dr He Zhiyuan is a professor-level senior engineer; he is currently the Vice Dean of China Electric Power Research Institute Co., Ltd., the director of the National Key Laboratory of "Advanced Transmission Technology", a senior member of the Chinese Institute of Electrical Engineering, a member of the China National Committee of CIGRE and the Standard Committee of Power Electronic Devices for Power Systems of the China Electricity Federation
Ke Jinkun China Electric Power Research Institute Co., Ltd, China.Ke Jinkun, professor-level senior engineer, works at China Electric Power Research Institute Co., Ltd.; he has been engaged in the research and development of high-voltage power semiconductor control chip technology, real-time control technology, and DC transmission technology for many years. He is the chairman of the global technical group of IPC-9207 "IGBT Product Application Reliability Test Method". He has led the development of 30 kinds of central control boards, power boards, and drivers suitable for flexible DC, high-voltage circuit breakers, and CLCC, which have been successfully applied to dozens of major projects such as State Grid Xiamen Flex, Zhoushan Flex, Chongqing-Hubei DC Networking, Zhangbei DC Power Grid, South Grid Wudongde Multi-terminal Flex, and Three Gorges Rudong Offshore Wind Power
