The emerging non volatile memory market size is expected to see rapid growth in the next few years. It will grow to $13.85 billion in 2030 at a compound annual growth rate (CAGR) of 18.4%. The growth during the forecast period can be attributed to increasing demand for memory solutions offering higher storage density, rising need for faster data retrieval, growing adoption of advanced non-volatile memory architectures, increasing demand for energy-efficient memory solutions, and expanding requirements for high-endurance memory in critical applications. Major trends during the forecast period include increasing demand for faster data access, rising need for low-power memory solutions, growing demand for enhanced memory endurance, increasing adoption of high-density non-volatile memory, and expanding demand for reliable data retention.
The increasing deployment of Internet of Things (IoT) devices is expected to propel the growth of the emerging non-volatile memory market going forward. IoT device deployment refers to the widespread installation and integration of connected devices that collect, process, and exchange data through networks. IoT device deployment is increasing due to the growing adoption of smart homes, industrial automation, and connected technologies that require real-time data processing and connectivity. Emerging non-volatile memory supports IoT devices by providing high-speed data access, low power consumption, fast read and write performance, high endurance, and reliable data retention, enabling efficient real-time data processing, edge computing, and extended battery life in connected devices. For instance, in July 2025, the European Commission, a Belgium-based governing body, reported that the number of IoT-connected devices reached approximately 40 billion in 2023 and is projected to increase to 49 billion by 2026, representing an annual growth rate of 7%. Therefore, the increasing deployment of Internet of Things (IoT) devices is driving the growth of the emerging non-volatile memory market.
Major companies operating in the emerging non-volatile memory market are concentrating on developing innovative solutions, such as unified magneto resistive random access memory architectures, to improve memory performance, endurance, and reliability in embedded systems. Unified MRAM architectures are advanced non-volatile memory solutions that combine code and data storage within a single persistent memory platform, offering higher speed, greater endurance, and lower power consumption than conventional NOR flash memory while simplifying system architecture and maintaining data retention. For instance, in March 2026, Everspin Technologies Inc., a US-based developer and manufacturer of magnetoresistive random access memory solutions, launched the UNISYST MRAM family, a new generation of unified memory designed for embedded systems. The product expands the company's MRAM roadmap with capacities ranging from 128 megabits to 2 gigabits and supports a standard xSPI interface operating at up to octal SPI at 200 MHz. It is designed to deliver high endurance, at least 10-year data retention under extreme temperatures, and AEC-Q100 Grade 1 qualification, making it suitable for automotive, aerospace, industrial, and edge computing applications.
In October 2023, Allegro MicroSystems Inc., a US-based semiconductor company, acquired Crocus Technology for $420 million. Through this acquisition, Allegro MicroSystems aimed to accelerate its tunnel magnetoresistance (TMR) technology roadmap, strengthen its magnetic sensing portfolio, and expand its capabilities in high-growth applications such as e-mobility, clean energy, industrial automation, and automotive markets. Crocus Technology International Corp is a US-based developer of emerging non-volatile memory solutions that specializes in MRAM technology based on its proprietary thermally assisted switching (TAS) approach.
Major companies operating in the emerging non volatile memory market are Samsung Electronics Co Ltd, Taiwan Semiconductor Manufacturing Company Limited, Intel Corporation, SK Hynix Inc, Micron Technology Inc, Renesas Electronics Corporation, Western Digital Corporation, Infineon Technologies AG, STMicroelectronics NV, NXP Semiconductors NV, Kioxia Corporation, Microchip Technology Inc, GlobalFoundries Inc, United Microelectronics Corporation, Winbond Electronics Corp, Macronix International Co Ltd, Fujitsu Semiconductor Memory Solution Limited, Everspin Technologies Inc, Weebit Nano Ltd, Avalanche Technology Inc, Crossbar Inc, Nantero Inc, Ferroelectric Memory GmbH, Numem Inc.
North America was the dominating region in the emerging non volatile memory market in 2025. Asia-Pacific is expected to be the rapidly growing region in the forecast period. The regions covered in the emerging non volatile memory market report are Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
The countries covered in the emerging non volatile memory market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Taiwan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
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Table of Contents
Executive Summary
Emerging Non Volatile Memory Market Global Report 2026 provides strategists, marketers and senior management with the critical information they need to assess the market.This report focuses emerging non volatile memory market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.
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Description
Where is the largest and fastest growing market for emerging non volatile memory? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward, including technological disruption, regulatory shifts, and changing consumer preferences? The emerging non volatile memory market global report answers all these questions and many more.The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, total addressable market (TAM), market attractiveness score (MAS), competitive landscape, market shares, company scoring matrix, trends and strategies for this market. It traces the market’s historic and forecast market growth by geography.
Scope
Markets Covered:
1) By Type: Stand-Alone; Embedded2) By Wafer Size: Two Hundred Millimeter; Three Hundred Millimeter
3) By Application: Cache Memory And Enterprise Storage; Mobile Phones And Wearables; Industrial And Automotive Control; Mass Storage; Embedded Microcontroller Unit And Smart Cards; Other Applications
4) By End-User Industry: Consumer Electronics; Industrial; Enterprise And Data Center; Automotive And Transportation; Healthcare And Medical Devices; Aerospace And Defense; Other End-User Industries
Subsegments:
1) By Stand-Alone: Magnetoresistive Random Access Memory; Resistive Random Access Memory; Phase Change Memory; Ferroelectric Random Access Memory; Three Dimensional Crosspoint Memory2) By Embedded: Embedded Magnetoresistive Random Access Memory; Embedded Resistive Random Access Memory; Embedded Ferroelectric Random Access Memory; Embedded Phase Change Memory; Embedded Flash Memory
Companies Mentioned: Samsung Electronics Co Ltd; Taiwan Semiconductor Manufacturing Company Limited; Intel Corporation; SK Hynix Inc; Micron Technology Inc; Renesas Electronics Corporation; Western Digital Corporation; Infineon Technologies AG; STMicroelectronics NV; NXP Semiconductors NV; Kioxia Corporation; Microchip Technology Inc; GlobalFoundries Inc; United Microelectronics Corporation; Winbond Electronics Corp; Macronix International Co Ltd; Fujitsu Semiconductor Memory Solution Limited; Everspin Technologies Inc; Weebit Nano Ltd; Avalanche Technology Inc; Crossbar Inc; Nantero Inc; Ferroelectric Memory GmbH; Numem Inc
Countries: Australia; Brazil; China; France; Germany; India; Indonesia; Japan; Taiwan; Russia; South Korea; UK; USA; Canada; Italy; Spain
Regions: Asia-Pacific; South East Asia; Western Europe; Eastern Europe; North America; South America; Middle East; Africa
Time Series: Five years historic and ten years forecast.
Data: Ratios of market size and growth to related markets, GDP proportions, expenditure per capita.
Data Segmentations: Country and regional historic and forecast data, market share of competitors, market segments.
Sourcing and Referencing: Data and analysis throughout the report is sourced using end notes.
Delivery Format: Word, PDF or Interactive Report + Excel Dashboard
Added Benefits
- Bi-Annual Data Update
- Customisation
- Expert Consultant Support
Companies Mentioned
- Samsung Electronics Co Ltd
- Taiwan Semiconductor Manufacturing Company Limited
- Intel Corporation
- SK Hynix Inc
- Micron Technology Inc
- Renesas Electronics Corporation
- Western Digital Corporation
- Infineon Technologies AG
- STMicroelectronics NV
- NXP Semiconductors NV
- Kioxia Corporation
- Microchip Technology Inc
- GlobalFoundries Inc
- United Microelectronics Corporation
- Winbond Electronics Corp
- Macronix International Co Ltd
- Fujitsu Semiconductor Memory Solution Limited
- Everspin Technologies Inc
- Weebit Nano Ltd
- Avalanche Technology Inc
- Crossbar Inc
- Nantero Inc
- Ferroelectric Memory GmbH
- Numem Inc

