Silicon Carbide Power Semiconductor Market Report 2026

The silicon carbide power semiconductor market size has grown exponentially in recent years. It will grow from $1.55 billion in 2025 to $1.95 billion in 2026 at a compound annual growth rate (CAGR) of 25.6%. The growth in the historic period can be attributed to limitations of silicon-based power devices, growth of industrial automation systems, early adoption in renewable energy inverters, demand for energy-efficient power electronics, advancements in wide bandgap semiconductor research.

The silicon carbide power semiconductor market size is expected to see exponential growth in the next few years. It will grow to $4.44 billion in 2030 at a compound annual growth rate (CAGR) of 22.9%. The growth in the forecast period can be attributed to rapid expansion of electric vehicle charging infrastructure, increasing investments in renewable energy generation, rising demand for high-efficiency data center power supplies, adoption of high-voltage power modules in aerospace systems, scaling of sic wafer manufacturing capacity. Major trends in the forecast period include rising adoption of sic devices in high-voltage power applications, increasing use of sic power semiconductors in electric vehicle powertrains, growing demand for high-temperature and high-frequency power devices, expansion of sic-based modules for industrial motor drives, advancements in sic wafer quality and yield improvement.

The increasing adoption of electric vehicles (EVs) is expected to fuel the growth of the silicon carbide (SiC) power semiconductor market in the coming years. An electric vehicle is a type of vehicle powered by one or more electric motors. The rise in EV adoption is driven by technological advancements, regulatory support, consumer demand, and investments from the industry. Silicon carbide power semiconductors play a key role in EVs by enhancing efficiency, reducing weight, and improving overall performance compared to traditional silicon-based semiconductors. As EV manufacturers aim to optimize vehicle performance and enhance the driving experience, the use of SiC semiconductors is growing. For example, in January 2024, the U.S. Energy Information Administration reported that in 2023, hybrid vehicles, plug-in hybrid electric vehicles, and battery electric vehicles (BEVs) collectively accounted for 16.3% of total new light-duty vehicle (LDV) sales in the United States.

Leading companies in the silicon carbide power semiconductor market are concentrating on innovation, particularly in developing products such as silicon carbide MOSFETs, known for their high performance and reliability in industrial applications. Silicon carbide MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) utilize SiC as the semiconductor material, offering superior characteristics. For instance, Nexperia B.V., a Netherlands-based semiconductor company, introduced discrete 1200 V MOSFETs in November 2023, leveraging silicon carbide technology. These advanced devices are designed to optimize efficiency and reliability, featuring ultra-low switching losses and enhanced thermal performance to ensure robust operation under challenging conditions.

In April 2023, Robert Bosch GmbH, a Germany-based multinational engineering and technology company, announced a definitive agreement to acquire certain assets of TSI Semiconductors. This acquisition enhances Bosch's presence in the high-voltage silicon carbide power semiconductor market by converting the TSI facility to produce 200-mm SiC chips beginning in 2026. It is part of a planned investment of approximately US$1.5 billion to expand SiC manufacturing at the Roseville plant. TSI Semiconductors is a US-based manufacturer of semiconductor wafers, which serve as the foundational substrates for power devices.

Major companies operating in the silicon carbide power semiconductor market are Samsung Electronics Co. Ltd., Panasonic Corporation, Mitsubishi Electric Corporation, Toshiba Corporation, Eaton Corporation plc, Texas Instruments Inc., STMicroelectronics N.V., Infineon Technologies AG, BorgWarner Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Danfoss A/S, Microchip Technology Inc., ON Semiconductor Corporation, Fuji Electric Co. Ltd., ROHM Co. Ltd., Littelfuse Inc., Microsemi Corporation, Wolfspeed Inc., GeneSiC Semiconductor Inc.

Note that the outlook for this market is being affected by rapid changes in trade relations and tariffs globally. The report will be updated prior to delivery to reflect the latest status, including revised forecasts and quantified impact analysis. The report’s Recommendations and Conclusions sections will be updated to give strategies for entities dealing with the fast-moving international environment.

Tariffs have impacted the silicon carbide power semiconductors market by increasing costs of imported SiC wafers, epitaxial layers, and specialized fabrication equipment used in device manufacturing. These cost pressures have affected automotive, industrial, and energy applications, particularly in Asia-Pacific and Europe where cross-border supply chains are prominent. High-voltage MOSFETs, diodes, and power modules have been most affected due to material dependency. At the same time, tariffs are encouraging localized production, supply chain diversification, and domestic investments in SiC manufacturing, strengthening long-term market competitiveness.

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Silicon carbide (SiC) power semiconductors are a class of semiconductor devices that utilize silicon carbide as the semiconductor material, replacing traditional silicon. These devices are primarily employed in power electronics applications due to several advantageous properties of silicon carbide over silicon, including higher breakdown voltage, lower switching losses, and better performance at higher operating temperatures.

The main types of silicon carbide power semiconductors include metal-oxide-semiconductor field-effect transistors (MOSFETs), hybrid modules, schottky barrier diodes (SBDs), insulated gate bipolar transistors (IGBTs), bipolar junction transistors (BJTs), pin diodes, junction FETs (JFETs), and other specialized types. MOSFETs are three-terminal devices where current flows between two terminals (source and drain), with the third terminal (gate) controlling the current flow. Silicon carbide power semiconductors are categorized by various voltage ranges such as 301-900 V, 901-1700 V, and above 1701 V, and are available in different wafer types including SiC epitaxial wafers and blank SiC wafers. These semiconductors find applications across diverse fields including electric vehicles (EVs), photovoltaics, power supplies, industrial motor drives, electric vehicle charging infrastructure, RF devices, and other sectors. They cater to various end-users such as industrial, automotive, energy and power, information technology and telecom, transportation, aerospace and defense, among others.Asia-Pacific was the largest region in the silicon carbide power semiconductor market in 2025. Asia-Pacific is expected to be the fastest-growing region in the market. The regions covered in the silicon carbide power semiconductor market report are Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, Middle East, Africa. The countries covered in the silicon carbide power semiconductor market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Taiwan, Russia, South Korea, UK, USA, Canada, Italy, Spain.

The silicon carbide power semiconductor market consists of sales of metal-oxide-semiconductor field-effect transistors (MOSFETs), junction field-effect transistors (JFETs), and insulated gate bipolar transistors (IGBTs). Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.

The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD unless otherwise specified).

The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.

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