Global GaN Radio Frequency Devices Market 2016-2020

  • ID: 3934371
  • Report
  • Region: Global
  • 63 pages
  • TechNavio
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FEATURED COMPANIES

  • Ampleon Netherlands B.V.
  • Fujitsu Semiconductor
  • Infineon Technologies
  • MACOM
  • Northrop Grumman
  • Qorvo
  • MORE
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About GaN

Silicon has been the preferred choice for computing and electronic devices since its invention almost 50 years ago. However, the constant evolution of technology demands high power and ever greater enhancements in the core semiconductor materials to ensure high performance. GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.

The analysts forecast the global GaN radio frequency (RF) devices market to grow at a CAGR of 18.94% during the period 2016-2020.

Covered in this report
The report covers the present scenario and the growth prospects of the global GaN radio frequency (RF) devices market for 2016-2020. The report considers the use of GaN RF devices in different end-user segments such as cellular infrastructure (telecom towers, base stations, telecom infrastructure, and cellular networks); defense sector (military communications, radar, and electronic warfare); CATV (cable television dishes); and others (medical, satellite communications, broadband amplifiers, wired broadband, and ISM band applications).

The market is divided into the following segments based on geography:
- APAC
- Europe
- North America
- ROW

The report, Global GaN Radio Frequency (RF) Devices Market 2016-2020, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
- GAN Systems
- Infineon Technologies
- NXP Semiconductor
- Qorvo
- Wolfspeed (Cree)

Other prominent vendors
- Ampleon Netherlands B.V.
- Avago Technologies
- Efficient Power Conversion (EPC)
- Fujitsu Semiconductor
- INTEGRA Technologies
- MACOM
- Microsemi
- Northrop Grumman
- NTT Advanced Technology Corporation
- RFHIC
- Sumitomo Electric Device Innovations
- ST-Ericsson
- Texas Instruments
- Toshiba
- United Monolithic Semiconductors (UMS)
- WIN Semiconductors

Market drivers
- Proliferation of next-generation LTE wireless networks
- For a full, detailed list, view the full report

Market challenges
- Requirement for high investment
- For a full, detailed list, view the full report

Market trends
- High adoption GaN power amplifiers
- For a full, detailed list, view the full report

Key questions answered in this report
- What will the market size be in 2020 and what will the growth rate be?
- What are the key market trends?
- What is driving this market?
- What are the challenges to market growth?
- Who are the key vendors in this market space?
- What are the market opportunities and threats faced by the key vendors?
- What are the strengths and weaknesses of the key vendors?

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2 of 5

FEATURED COMPANIES

  • Ampleon Netherlands B.V.
  • Fujitsu Semiconductor
  • Infineon Technologies
  • MACOM
  • Northrop Grumman
  • Qorvo
  • MORE
1h Free Analyst Time

Speak directly to the analyst to clarify any post sales queries you may have.

PART 01: Executive summary
  • Highlights
PART 02: Scope of the report
  • Definition
  • Source year and forecast period
  • Market overview
  • Market segmentation
  • Geographical coverage
  • Vendor segmentation
  • Common currency conversion rates
  • Top-vendor offerings
PART 03: Market research methodology
  • Research methodology
  • Economic indicators
PART 04: Introduction
  • Key market highlights
PART 05: Technology landscape

PART 06: Market landscape
  • Market overview
  • Market size and forecast
  • Five forces analysis
PART 07: Market segmentation by sector application
  • Cellular infrastructure
  • Defense sector
  • CATV
  • Others
PART 08: Geographical segmentation
  • North America
  • APAC
  • Europe
  • RoW
PART 09: Market drivers
  • Proliferation of next-generation LTE wireless networks
  • Dawn of carrier aggregation
  • Large-scale use of GaN RF by defense sector
  • Emerging companies focusing on gallium-based compounds
  • GaN RF gaining ground in APAC
PART 10: Impact of drivers

PART 11: Market challenges
  • Requirement for high investment
  • Scarcity of professionals for GaN semiconductor devices
  • Availability of substitute technologies
  • Time to market pressures
  • Uncertain economic conditions
PART 12: Impact of drivers and challenges

PART 13: Market trends
  • High adoption GaN power amplifiers
  • Growing number of smart cities
  • Increasing prominence of GaN die
  • Proliferation of IoT
PART 14: Vendor landscape
  • Competitive scenario
  • Other prominent vendors
PART 15: About the Author

List of Exhibits
Exhibit 01: Global GaN RF devices market segmentation
Exhibit 02: List of countries in key regions
Exhibit 03: Market vendors
Exhibit 04: Currency conversions
Exhibit 05: Product offerings
Exhibit 06: Power devices and GaN applications
Exhibit 07: GaN versus other semiconductor materials
Exhibit 08: Global GaN RF devices market 2015-2020 ($ millions)
Exhibit 09: Five forces analysis
Exhibit 10: GaN RF device applications 2015-2020 (% share)
Exhibit 11: GaN RF device applications 2015-2020 ($ millions)
Exhibit 12: Global GaN RF devices market in the cellular infrastructure sector 2015-2020 ($ millions)
Exhibit 13: Global GaN RF devices market in the defense sector 2015-2020 ($ millions)
Exhibit 14: Global GaN RF devices market in CATV 2015-2020 ($ millions)
Exhibit 15: Global GaN RF devices market in other sectors 2015-2020 ($ millions)
Exhibit 16: Regional breakdown of GaN RF devices 2015-2020 (% share)
Exhibit 17: Regional breakdown of GaN RF devices 2015-2020 (% share)
Exhibit 18: Global GaN RF devices market in North America 2015-2020 ($ millions)
Exhibit 19: Global GaN RF devices market in APAC 2015-2020 ($ millions)
Exhibit 20: Global GaN RF devices market in Europe 2015-2020 ($ millions)
Exhibit 21: Global GaN RF devices market in RoW 2015-2020 ($ millions)
Exhibit 22: LTE networks over the years
Exhibit 23: US funding to DoD for Procurement in FY2015
Exhibit 24: US funding to DoD for RDT&E programs in FY2015
Exhibit 25: Defense budget for military spending 2015 ($ billions)
Exhibit 26: Impact of drivers
Exhibit 27: Impact of drivers and challenges
Exhibit 28: Requirement for IoT
Exhibit 29: Factors of competition in global GaN RF devices market
Exhibit 30: Other prominent vendors
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FEATURED COMPANIES

  • Ampleon Netherlands B.V.
  • Fujitsu Semiconductor
  • Infineon Technologies
  • MACOM
  • Northrop Grumman
  • Qorvo
  • MORE
1h Free Analyst Time

Speak directly to the analyst to clarify any post sales queries you may have.

New Report Released: – Global GaN Radio Frequency (RF) Devices Market 2016-2020

The author of the report recognizes the following companies as the key players in the global GaN radio frequency (RF) devices market: GAN Systems, Infineon Technologies, NXP Semiconductors, Qorvo, and Wolfspeed.
Other Prominent Vendors in the market are: Ampleon Netherlands B.V., Avago Technologies, Efficient Power Conversion (EPC), Fujitsu Semiconductor, INTEGRA Technologies, MACOM, Microsemi, Northrop Grumman, NTT Advanced Technology Corporation, RFHIC, Sumitomo Electric Device Innovations, ST-Ericsson, Texas Instruments, Toshiba, United Monolithic Semiconductors (UMS), and WIN Semiconductors.

Commenting on the report, an analyst from the research team said: “that proliferation of IoT is one of the trends spurring growth for the market. IoT enables devices to collect data using actuators and sensors and transmit data to a centralized location on a real-time basis, which empowers the user to take an informed decision. Sensors and MEMS are an integral part of IoT devices and are manufactured from 200 mm wafer. It is estimated a total of one trillion sensors will be produced in 2020 to support the demand for IoT devices. The growing applications of IoT will have a high impact on semiconductor device manufacturers. Wireless communication technologies driving IoT connectivity include Wi-Fi, Bluetooth, and ZigBee, with Ethernet also having a role to play. Thus, the adoption of IoT is increasing in a number of market segments such as consumer electronics, automotive, and medical, which is expected to auger well for the growth of the market during the forecast period.”

According to the report, emerging companies focusing on gallium-based compounds is a key driver aiding to the growth of this market. The silicon-based RF power semiconductor market is dominated by vendors such as Infineon Technologies and NXP Semiconductor. As a result of the domination of these global players in the semiconductor market, emerging companies such as MACOM are focusing more on GaN technology for RF power semiconductor devices. Though the gallium-based high-power RF semiconductor market is still in the nascent stage, commercialization is taking place. The benefits of GaN include wide bandgap and higher power, energy, and speeds in reaching higher energy states. In addition, the market hold of the leading vendors of the silicon-based RF power devices is not strong enough to prevent emerging companies from developing and using new technologies.

Further, the report states that scarcity of professionals for GaN semiconductor devices is a major challenge the market is facing. GaN-based semiconductors are new in the field of mass RF applications even though they have been used since 1990 in a series of small/limited applications. The technology was later used by the defense sector and was finally commercialized after 2010. GaN technology is a niche semiconductor technology. Therefore, the availability of skilled professionals in this field is not in line with the demand. A critical issue faced by the experts in this market is training professionals. It takes three to four years for a professional to be fully trained in the GaN-based semiconductor technology. In such a scenario, the attrition of trained professionals is also affecting the growth of the global GaN RF devices market.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
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- GAN Systems
- Infineon Technologies
- NXP Semiconductors
- Qorvo
- Wolfspeed
- Ampleon Netherlands B.V.
- Avago Technologies
- Efficient Power Conversion (EPC)
- Fujitsu Semiconductor
- INTEGRA Technologies
- MACOM
- Microsemi
- Northrop Grumman
- NTT Advanced Technology Corporation
- RFHIC
- Sumitomo Electric Device Innovations
- ST-Ericsson
- Texas Instruments
- Toshiba
- United Monolithic Semiconductors (UMS)
- WIN Semiconductors.
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