Advances in Non-volatile Memory and Storage Technology. Edition No. 2. Woodhead Publishing Series in Electronic and Optical Materials

  • ID: 4720825
  • Book
  • 675 Pages
  • Elsevier Science and Technology
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Advances in Non-volatile Memory and Storage Technology, Second Edition addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.

This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.

  • Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories
  • Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
  • Examines improvements to flash technology, charge trapping and resistive random access memory
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Part 1: Progress in nonvolatile memory research and application 1. OxRAM technology development and performance 2. Advances in RRAM materials and devices 3. Ab initio modeling of RRAM device characteristics 4. Advanced modeling and characterization techniques for innovative memory devices 5. What is a memristor? 6. Mechanisms of memristive switching in OxRAM 7. Interface effects on memristive devices 8. STT-MRAM and SOT-MRAM devices 9. Advances in STT-MRAM technology 10. Advances in 3D NAND flash memory 11. Advances in conductive bridge memory technology 12. Advances in selector devices

Part 2: Emerging opportunities 13. Advances in HfO2 based FeRAM 14. FeRAM 15. Advances in nanowire PCRAM 16. Flexible and transparent RERAM devices for system on panel application 17. Memristor applications for computing 18. Neuromorphic technologies 19. Neuromorphic computing with resistive switching memory devices

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Nishi, Yoshio
Professor Yoshio Nishi is a Professor in the Department of Electrical Engineering and by courtesy in the Department of Material Science and Engineering. He was Director of the Stanford Nanofabrication Facility of National Nanotechnology Infrastructure Network and is now Director of Research of Stanford Center for Integrated Systems at Stanford University, USA
Magyari-Kope, Blanka
Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Since 2006, she has been an engineering Research Associate and from 2011 a Senior Research Engineer in the Department of Electrical Engineering at Stanford University. Prior to this position she was a postdoctoral researcher in the Department of Materials Science and Engineering, University of California, Los Angeles
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